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1. 发明申请

WO2003063208A2 ARRAY-BASED ARCHITECTURE FOR MOLECULAR ELECTRONICS 审中-公开
标题翻译：分子电子学基于阵列的架构
公开(公告)号：WO2003063208A2
公开(公告)日：2003-07-31
申请号：PCT/US2003/001555
申请日：2003-01-17
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY , THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE , DEHON, Andre , LIEBER, Charles, M.
发明人： DEHON, Andre , LIEBER, Charles, M.
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/003 , G11C2213/75 , G11C2213/77 , G11C2213/81 , H01L27/28 , H01L27/285 , H01L51/0508 , H01L51/0595
摘要： An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscalewires.
摘要翻译：公开了一种用于纳米尺度电子学的架构。该架构包括具有选择性可编程交叉点的交叉纳米线的阵列。一个阵列的纳米线由其他阵列共享，从而在阵列之间提供信号传播。还提供了纳米尺度信号恢复元件，允许将第一阵列的输出用作第二阵列的输入。信号恢复发生，而不会将信号路由到非纳米级别。

2. 发明申请

WO2003063208A3 ARRAY-BASED ARCHITECTURE FOR MOLECULAR ELECTRONICS 审中-公开
公开(公告)号：WO2003063208A3
公开(公告)日：2003-07-31
申请号：PCT/US2003/001555
申请日：2003-01-17
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY , THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE , DEHON, Andre , LIEBER, Charles, M.
发明人： DEHON, Andre , LIEBER, Charles, M.
IPC分类号： G11C11/34
摘要： An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscalewires.

3. 发明申请

WO2004034467A2 SUBLITHOGRAPHIC NANOSCALE MEMORY ARCHITECTURE 审中-公开
标题翻译：分层纳米存储器架构
公开(公告)号：WO2004034467A2
公开(公告)日：2004-04-22
申请号：PCT/US2003/023199
申请日：2003-07-24
申请人： DEHON, Andre' , LIEBER, Charles, M. , LINCOLN, Patrick, D. , SAVAGE, John
发明人： DEHON, Andre' , LIEBER, Charles, M. , LINCOLN, Patrick, D. , SAVAGE, John
IPC分类号： H01L27/00
CPC分类号： H01L49/00 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/02 , G11C13/025 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L23/522 , H01L27/101 , H01L29/0665 , H01L29/0673 , H01L2924/0002 , Y10S977/762 , Y10S977/943 , H01L2924/00
摘要： A memory array comprising nanoscale wires is disclosed. The nanoscale wiresare addressed by means of controllable regions axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires andmicroscale wires. In a two-dimensional emobdiment, memory locations aredefined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing pointsbetween nanoscale wires located in different vertical layers.
摘要翻译：公开了一种包括纳米线的存储器阵列。纳米尺度线通过沿着纳米尺度线轴向和/或径向分布的可控区域来寻址。在一维实施例中，存储器位置由纳米尺寸线和微尺寸线之间的交叉点限定。在二维实验中，存储器位置由垂直的纳米线之间的交叉点定义。在三维实施例中，存储器位置由位于不同垂直层中的纳米线之间的交叉点定义。

4. 发明申请

WO2006084128A3 APPARATUS, METHOD AND COMPUTER PROGRAM PRODUCT PROVIDING RADIAL ADDRESSING OF NANOWIRES 审中-公开
公开(公告)号：WO2006084128A3
公开(公告)日：2006-08-10
申请号：PCT/US2006/003840
申请日：2006-02-02
申请人： BROWN UNIVERSITY , DEHON, Andre , LIEBER, Charles, M. , SAVAGE, John, E. , RACHLIN, Eric
发明人： DEHON, Andre , LIEBER, Charles, M. , SAVAGE, John, E. , RACHLIN, Eric
IPC分类号： B44C1/22 , H01L21/00 , G06F7/38
摘要： Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes providing a plurality of radially encoded NWs where each shell contains one of a plurality of different shell materials; and differentiating individual ones of the NWs from one another by selectively removing or not removing shell material within areas to be electrically coupled to individual ones of a plurality of mesowires (MWs). Also disclosed is a nanowire array that contains radially encoded NWs, and a computer program product useful in forming a nanowire array.

5. 发明公开

EP1831973A2 NANOSCALE WIRE-BASED DATA STORAGE 审中-公开
标题翻译：纳米级有线数据存储
公开(公告)号：EP1831973A2
公开(公告)日：2007-09-12
申请号：EP05858579.5
申请日：2005-12-06
申请人： The President and Fellows of Harvard College
发明人： LIEBER, Charles, M. , WU, Yue , YAN, Hao
IPC分类号： H01R24/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C11/22 , G11C11/223 , G11C11/54 , G11C11/56 , G11C11/5657 , G11C13/003 , G11C13/025 , G11C2213/16 , G11C2213/17 , G11C2213/18 , G11C2213/75 , G11C2213/77 , H01L29/0673 , H01L29/068 , H01L29/78391
摘要： The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electricallypolarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO3, lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electricallypolarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electricallypolarizable shell.

6. 发明公开

EP2095100A1 HIGH-SENSITIVITY NANOSCALE WIRE SENSORS 有权
标题翻译：一种操作纳米线场效应晶体管传感器的方法
公开(公告)号：EP2095100A1
公开(公告)日：2009-09-02
申请号：EP07873479.5
申请日：2007-11-19
申请人： The President and Fellows of Harvard College
发明人： LIEBER, Charles, M. , GAO, Xuan, P.a. , ZHENG, Gengfeng
IPC分类号： G01N27/414
CPC分类号： G01N33/552 , B82Y15/00 , B82Y30/00 , G01N27/4146
摘要： The present invention generally relates to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. The invention provides a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross- sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length ( lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.

7. 发明申请

WO2004061859A2 STOCHASTIC ASSEMBLY OF SUBLITHOGRAPHIC NANOSCALE INTERFACES 审中-公开
标题翻译：分层纳米结构界面的组装
公开(公告)号：WO2004061859A2
公开(公告)日：2004-07-22
申请号：PCT/US2003/023198
申请日：2003-07-24
申请人： DEHON, Andre' , LIEBER, Charles, M. , LINCOLN, Patrick, D. , SAVAGE, John
发明人： DEHON, Andre' , LIEBER, Charles, M. , LINCOLN, Patrick, D. , SAVAGE, John
IPC分类号： G11C13/02
CPC分类号： H01L49/00 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/02 , G11C13/025 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L23/522 , H01L27/101 , H01L29/0665 , H01L29/0673 , H01L2924/0002 , Y10S977/762 , Y10S977/943 , H01L2924/00
摘要： A method for controlling electric conduction on nanoscale wires is disclosed.The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types.For example, a first type of controllable region can exhibit a different dopingfrom a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independentlyselected.
摘要翻译：公开了一种用于控制纳米尺寸导线上的导电的方法。纳米尺寸线材设有轴向和/或径向分布的可控区域。通过微细线或额外的纳米线控制这些区域可以允许或防止受控纳米尺寸导线上的电导。可控区域有两种不同的类型。例如，第一类型的可控区域可以表现出与第二类型可控区域不同的掺杂。该方法允许独立地选择以亚光刻间距包装的一组纳米级线。

8. 发明申请

WO2012170630A3 NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS 审中-公开
公开(公告)号：WO2012170630A3
公开(公告)日：2012-12-13
申请号：PCT/US2012/041253
申请日：2012-06-07
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
发明人： LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
IPC分类号： H01L29/78 , H01L21/336
摘要： The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.

9. 发明申请

WO2011038228A1 BENT NANOWIRES AND RELATED PROBING OF SPECIES 审中-公开
标题翻译： BENT NANOWIRES和相关物种的探索
公开(公告)号：WO2011038228A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/050199
申请日：2010-09-24
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , TIAN, Bozhi , XIE, Ping , KEMPA, Thomas, J. , LIEBER, Charles, M. , COHEN-KARNI, Tzahi , QING, Quan , DUAN, Xiaojie
发明人： TIAN, Bozhi , XIE, Ping , KEMPA, Thomas, J. , LIEBER, Charles, M. , COHEN-KARNI, Tzahi , QING, Quan , DUAN, Xiaojie
IPC分类号： G01N33/487 , H01L29/06
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , G01N33/48728 , H01L21/02603 , H01L29/045 , H01L29/0665 , H01L29/0669 , H01L51/0048
摘要： Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
摘要翻译：扭曲的纳米线用于测量简单电池内的电位。改进的细胞内入口通过用磷脂修饰扭结的纳米线来实现。

10. 发明申请

WO2007044034A2 NANOSCALE WIRE-BASED DATA STORAGE 审中-公开
标题翻译：纳米线基数据存储
公开(公告)号：WO2007044034A2
公开(公告)日：2007-04-19
申请号：PCT/US2005/044212
申请日：2005-12-06
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , WU, Yue , YAN, Hao
发明人： LIEBER, Charles, M. , WU, Yue , YAN, Hao
IPC分类号： H01R24/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C11/22 , G11C11/223 , G11C11/54 , G11C11/56 , G11C11/5657 , G11C13/003 , G11C13/025 , G11C2213/16 , G11C2213/17 , G11C2213/18 , G11C2213/75 , G11C2213/77 , H01L29/0673 , H01L29/068 , H01L29/78391
摘要： The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electricallypolarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO 3 , lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electricallypolarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electricallypolarizable shell.
摘要翻译：本发明一般涉及可用于电路中并且在某些情况下可用于纳米级线和其他能够编码数据的纳米结构的纳米技术和次级微电子器件。本发明的一个方面提供了具有可电极化的区域的纳米线或其他纳米结构，例如纳米线可以包括核和电极化壳。在一些情况下，电极化区域能够在没有外部电场的情况下保持其极化状态。例如，所有或只有一部分电极和可怕极化区域可以被极化，以编码一个或多个数据位。在一组实施例中，可电极化区域包括功能氧化物或铁电氧化物材料，例如BaTiO 3，钛酸铅锆等。在一些实施例中，纳米线（或其他纳米结构）可以进一步包括其他材料，例如将纳米级线的其他区域与电和可;的可极化区域分开的分离区域。例如，在纳米线中，一个或多个中间壳可以将芯与电极和可怕的极化壳分开。

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