专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

WO0203472A3 AEROSOL SILICON NANOPARTICLES FOR USE IN SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：用于半导体器件制造的气溶胶硅纳米粒子
公开(公告)号：WO0203472A3
公开(公告)日：2002-04-18
申请号：PCT/US0120827
申请日：2001-06-29
申请人： CALIFORNIA INST OF TECHN
发明人： FLAGAN RICHARD C , BOER ELIZABETH , OSTRAAT MICHELE L , ATWATER HARRY A , BELL LLOYD D II
IPC分类号： H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/4763 , H01L21/8247 , H01L29/423 , H01L29/788 , H01L29/80 , H01L31/0336
CPC分类号： B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66833
摘要： A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particles sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably singel crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 10 to 10 particles/cm . A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less that 10 atoms/cm . The stratum is advantageouly used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volative memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behaviour and long-term non-volatility.
摘要翻译：电介质涂覆的半导体颗粒的层或不连续的单层包括在纳米范围内具有严格控制的粒度范围的高密度半导体纳米颗粒。在示例性实施方案中，层的纳米颗粒基本上相同的尺寸，并且包括晶体，优选单晶结晶的芯，并且包括与形成颗粒芯的半导体材料的体积密度近似相同的密度。在示例性实施例中，芯和颗粒的形状优选为球形。该层的特征在于10 12至10 13颗粒/ cm 2的颗粒密度均匀。多个相邻的颗粒彼此接触，但是介电壳提供电隔离并防止层的颗粒之间的横向传导。地层包括少于10 11个原子/ cm 2的外来原子污染密度。该层有利地用作诸如MOSFET之类的非易失性存储器件中的浮置栅极。包括半导体纳米颗粒的不连续浮动栅极的非磁性存储器件表现出优异的耐久性和长期非挥发性。

IPRDB

热门服务

关于我们

友情链接

联系方式