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    • 7. 发明申请
    • AEROSOL SILICON NANOPARTICLES FOR USE IN SEMICONDUCTOR DEVICE FABRICATION
    • 用于半导体器件制造的气溶胶硅纳米粒子
    • WO0203472A3
    • 2002-04-18
    • PCT/US0120827
    • 2001-06-29
    • CALIFORNIA INST OF TECHN
    • FLAGAN RICHARD CBOER ELIZABETHOSTRAAT MICHELE LATWATER HARRY ABELL LLOYD D II
    • H01L21/00H01L21/28H01L21/3205H01L21/336H01L21/4763H01L21/8247H01L29/423H01L29/788H01L29/80H01L31/0336
    • B82Y10/00G11C2216/06H01L21/28273H01L21/28282H01L29/42332H01L29/66833
    • A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particles sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably singel crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 10 to 10 particles/cm . A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less that 10 atoms/cm . The stratum is advantageouly used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volative memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behaviour and long-term non-volatility.
    • 电介质涂覆的半导体颗粒的层或不连续的单层包括在纳米范围内具有严格控制的粒度范围的高密度半导体纳米颗粒。 在示例性实施方案中,层的纳米颗粒基本上相同的尺寸,并且包括晶体,优选单晶结晶的芯,并且包括与形成颗粒芯的半导体材料的体积密度近似相同的密度 。 在示例性实施例中,芯和颗粒的形状优选为球形。 该层的特征在于10 12至10 13颗粒/ cm 2的颗粒密度均匀。 多个相邻的颗粒彼此接触,但是介电壳提供电隔离并防止层的颗粒之间的横向传导。 地层包括少于10 11个原子/ cm 2的外来原子污染密度。 该层有利地用作诸如MOSFET之类的非易失性存储器件中的浮置栅极。 包括半导体纳米颗粒的不连续浮动栅极的非磁性存储器件表现出优异的耐久性和长期非挥发性。
    • 8. 发明申请
    • SYSTEMS AND METHODS FOR IMPLEMENTING ELECTRICALLY TUNABLE METASURFACES
    • 用于实现电气可控元件的系统和方法
    • WO2015187221A3
    • 2016-01-28
    • PCT/US2015019315
    • 2015-03-06
    • CALIFORNIA INST OF TECHN
    • ATWATER HARRY A
    • H01S5/00G02B1/00
    • G02F1/0018B82Y20/00G02B1/002G02B26/02G02F1/0121G02F2202/30
    • Systems and methods in accordance with embodiments of the invention implement electrically tunable metasurfaces. In one embodiment, an electrically tunable metasurface reflectarray includes: a mirrored surface; a conductive layer; a dielectric layer; where the conductive layer and the dielectric layer are in direct contact, and thereby define a conductor-dielectric interface; a plurality of subwavelength antenna elements; and an electrical power source configured to establish a potential difference between at least one subwavelength antenna element and the mirrored surface; where a potential difference between a subwavelength antenna element and the mirrored surface applies an electric field to a corresponding region of the electrically tunable metasurface reflectarray; where any applied electric fields in conjunction with the geometry and the material composition of each of the subwavelength antenna elements, the conductive layer, and the dielectric layer, enable the electrically tunable metasurface reflectarray to measurably augment the propagation characteristics of incident electromagnetic waves.
    • 根据本发明的实施例的系统和方法实现电可调谐元表面。 在一个实施例中,电可调谐的表面反射阵列包括:镜面; 导电层; 电介质层; 其中导电层和电介质层直接接触,从而限定导体 - 电介质界面; 多个亚波长天线元件; 以及电源,被配置为建立至少一个子波长天线元件和所述镜面之间的电位差; 其中亚波长天线元件和镜面之间的电位差对电可调谐的表面反射阵列的对应区域施加电场; 其中任何施加的电场结合每个亚波长天线元件,导电层和介电层的几何形状和材料组成使得电可调谐的表面反射阵列能够可测量地增加入射电磁波的传播特性。
    • 10. 发明申请
    • PLASMOSTOR: A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR
    • 体外受体:A-METAL-OXIDE-SI场效应PLASMONIC MODULATOR
    • WO2009120721A3
    • 2010-03-04
    • PCT/US2009038143
    • 2009-03-24
    • CALIFORNIA INST OF TECHNDIONNE JENNIFER ADIEST KENNETH ASWEATLOCK LUKEATWATER HARRY A
    • DIONNE JENNIFER ADIEST KENNETH ASWEATLOCK LUKEATWATER HARRY A
    • H01L21/66H01L21/336
    • G02F1/025G02F2203/10
    • The invention is a system and method for performing all-optical modulation. A semiconductor layer having a defined thickness has an insulator adjacent one surface of the semiconductor. Conductive layers are provided adjacent the semiconductor layer and the insulator. A photodetector is provided to generate an electric field across the conductive layers in response to an input optical gate signal. An input optical signal is modulated by interaction with a plasmon wave generated at the semiconductor/conductive layer interface. By defining the thickness of the semiconductor layer, a desired wavelength of light supports the plasmon waves. Operation of the all-optical modulator requires the provision of an input optical signal of a desired wavelength and the provision of a gate optical signal. An output optical signal is recovered and can be used to store, display or transmit information, for example over a fiber optic communication system, such as a telecommunication system.
    • 本发明是用于执行全光调制的系统和方法。 具有限定厚度的半导体层具有与半导体的一个表面相邻的绝缘体。 导电层设置在半导体层和绝缘体附近。 提供光检测器以响应于输入光门信号在导电层两端产生电场。 输入光信号通过与在半导体/导电层界面处产生的等离子体激元波相互作用而被调制。 通过限定半导体层的厚度,期望的波长的光支持等离子体激元波。 全光调制器的操作需要提供具有期望波长的输入光信号并提供栅光信号。 输出光信号被恢复并且可以用于例如通过诸如电信系统的光纤通信系统来存储,显示或传输信息。