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    • 1. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US08014430B2
    • 2011-09-06
    • US12395576
    • 2009-02-27
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQijie WangFederico Capasso
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQijie WangFederico Capasso
    • H01S5/00
    • H01S5/3402B82Y20/00
    • A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
    • 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,对于从级别2向下转换,至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有非均匀平方波函数 分配。
    • 2. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20090213890A1
    • 2009-08-27
    • US12395576
    • 2009-02-27
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQije WangFederico Capasso
    • C. Kumar N. PatelAlexei TsekounRichard MauliniArkadiy LyakhChristian PfluglLaurent DiehlQije WangFederico Capasso
    • H01S5/343
    • H01S5/3402B82Y20/00
    • A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
    • 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,从级别2向下转换至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有不均匀的平方 波函数分布。
    • 5. 发明授权
    • Methods and apparatus for single-mode selection in quantum cascade lasers
    • 量子级联激光器中单模选择的方法和装置
    • US08351481B2
    • 2013-01-08
    • US13126576
    • 2009-11-05
    • Federico CapassoBenjamin G. LeeChristian PfluglLaurent DiehlMikhail A. Belkin
    • Federico CapassoBenjamin G. LeeChristian PfluglLaurent DiehlMikhail A. Belkin
    • H01S3/08
    • H01S5/1228B82Y20/00H01S5/0014H01S5/0287H01S5/0654H01S5/1231H01S5/305H01S5/3211H01S5/3401
    • Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.
    • 用于改进量子级联激光器中单模选择的方法和装置。 在一个示例中,分布式反馈光栅包括折射率耦合和损耗耦合组件。 损耗耦合部件有助于通过在有源区域的顶部周期性地引入有损耗的半导体材料的薄层来在两种模式之间引入足够大的损耗差异,从两种可能的发射模式中选择一种模式。 有损层被掺杂到足以对两种模式之一引起相当大的自由载流子吸收损耗的水平,同时为两种模式中的另一种模式提供足够的增益。 在替代实施方案中,高掺杂层可以被诸如量子阱,量子线和量子点之类的其它低维度结构代替,具有显着的工程化内部吸收,以选择性地增加多种可能模式之一的自由载流子吸收损耗, 以方便单模操作。
    • 6. 发明申请
    • BROADLY TUNABLE SINGLE-MODE QUANTUM CASCADE LASER SOURCES AND SENSORS
    • 广泛的单模单模量子CASCADE激光源和传感器
    • US20080144677A1
    • 2008-06-19
    • US11611819
    • 2006-12-15
    • Mikhail A. BelkinBenjamin G. LeeRoss M. AudetJames B. MacArthurLaurent DiehlChristian PfluglFederico Capasso
    • Mikhail A. BelkinBenjamin G. LeeRoss M. AudetJames B. MacArthurLaurent DiehlChristian PfluglFederico Capasso
    • H01S3/10
    • H01S5/4031B82Y20/00G01N21/1702G01N21/39G01N2021/1704G01N2021/399H01S5/0612H01S5/12H01S5/3401H01S5/4087
    • A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design). The performance (tuning range, line width, power level) is comparable to that of external grating tunable semiconductor lasers, but the proposed design is much smaller and much easier to manufacture.
    • 基于半导体激光器的广泛可调单模红外激光源。 激光源具有两部分:紧密间隔的DFB QCL(或其他半导体激光器)的阵列以及能够切换阵列中各个激光器的每个开关的控制器,为每个激光器设置电流和控制 阵列中的激光器的温度。 该装置可用于便携式宽带传感器中以同时检测大量包括化学和生物试剂在内的化合物。 微电子控制器与在相同宽带(或多波长)QCL材料上制造的具有稍微不同的DFB光栅周期的单独寻址的DFB QCL阵列组合。 这样可以在红外或太赫兹光谱范围(以及使用具有不同有源区域设计的半导体激光器的紫外和可见光谱范围)中构建一个紧凑的源,提供窄线宽可调谐相干辐射。 性能(调谐范围,线宽,功率水平)与外部光栅可调谐半导体激光器的性能相当,但所提出的设计要小得多,制造容易得多。