专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100267191A1 PLASMA ENHANCED THERMAL EVAPORATOR 审中-公开
标题翻译：等离子体增强型热蒸发器
公开(公告)号：US20100267191A1
公开(公告)日：2010-10-21
申请号：US12763856
申请日：2010-04-20
申请人： Byung-Sung Kwak , Kaushal K. Singh , Stefan Bangert , Nety M. Krishna
发明人： Byung-Sung Kwak , Kaushal K. Singh , Stefan Bangert , Nety M. Krishna
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C16/4485 , C23C16/45565 , H01L31/03923
摘要： The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
摘要翻译：本发明通常提供一种形成光伏器件的方法，包括蒸发源材料以形成大分子加工气体，并使大分子处理气体通过气体分配喷头流入其中具有衬底的处理室的处理区域。该方法包括生成小分子处理气体，并使小分子处理气体与已沉积在基板表面上的膜反应形成半导体膜。此外，还可以使用可以使用这些方法的装置来实现连续的在线CIGS型太阳能电池的形成。

2. 发明申请

US20100252108A1 COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR MATERIALS FOR DYE SENSITIZED SOLAR CELLS 审中-公开
标题翻译：用于DENE敏感的太阳能电池的铜箔透明P型半导体材料
公开(公告)号：US20100252108A1
公开(公告)日：2010-10-07
申请号：US12643419
申请日：2009-12-21
申请人： Kaushal K. Singh , Omkaram Nalamasu , Nety M. Krishna , Michael Snure , Ashutosh Tiwari
发明人： Kaushal K. Singh , Omkaram Nalamasu , Nety M. Krishna , Michael Snure , Ashutosh Tiwari
IPC分类号： H01L31/0256 , H01L31/18
CPC分类号： H01L51/4226 , C25B1/003 , H01G9/2031 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2, as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
摘要翻译：铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。具有CuBO 2薄膜的器件包括作为沟道层的包括薄膜CuBO 2的p型透明薄膜晶体管（TTFT）和具有CuBO 2 p层的薄膜太阳能电池。还描述了包括“核 - 壳”和“纳米对”“颗粒的各种形式的CuBO 2的固态染料敏化太阳能电池（SS-DSSC）和制造方法。

3. 发明申请

US20100261049A1 high power, high energy and large area energy storage devices 审中-公开
标题翻译：大功率，高能量和大面积储能装置
公开(公告)号：US20100261049A1
公开(公告)日：2010-10-14
申请号：US12422739
申请日：2009-04-13
申请人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
发明人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
IPC分类号： H01M6/46 , H01M6/00
CPC分类号： H01M10/0436 , H01G9/0029 , H01G9/012 , H01G9/15 , H01M10/052 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells.
摘要翻译：描述了容易制造的大功率，高能量，大面积的储能装置。能量存储装置可以使用与大面积加工工具兼容的工艺，例如与柔性薄膜基板兼容的大面积涂覆系统和线性处理系统。储能装置可以包括电池，超级电容器和超电容器。能量存储装置可以包括形成在单个基板上的多个薄膜单元，多个单元串联电连接，多个单元中的每一个包括：基板表面上的集电器; 集电器上的第一电极; 第一电极上的第二电极; 以及在第一电极和第二电极之间的电解质层。此外，能量存储装置可以包括形成在单个基板上的多个薄膜单元，所述多个单元电连接在网络中，所述网络包括多个单元中各个单元之间的并联和串联电连接。

4. 发明申请

US20100255660A1 SULFURIZATION OR SELENIZATION IN MOLTEN (LIQUID) STATE FOR THE PHOTOVOLTAIC APPLICATIONS 审中-公开
标题翻译：用于光伏应用的液体（液体）状态的硫化或放电
公开(公告)号：US20100255660A1
公开(公告)日：2010-10-07
申请号：US12755203
申请日：2010-04-06
申请人： Kaushal K. Singh , Ralf Hofmann , Nety M. Krishna
发明人： Kaushal K. Singh , Ralf Hofmann , Nety M. Krishna
IPC分类号： H01L21/363
CPC分类号： H01L21/02568 , C23C14/025 , C23C14/165 , C23C14/185 , C23C14/5866 , H01L21/02551 , H01L21/02565 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the “II/VI” variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.
摘要翻译：提供一种形成包含化合物半导体的太阳能电池的方法。化合物半导体通常为“II / VI”，并且通过在气相沉积工艺中沉积一个或多个II族元素，然后使沉积层与VI族元素的液槽接触而形成。液体浴可以包含纯元素或元素的混合物。接触在非反应性气氛或真空下进行，并且任何逸出的蒸气可能被冷阱捕获并再循环。可以随后将基材退火以除去任何过量的可以类似地再循环的VI族元素。

5. 发明申请

US20080135914A1 NANOCRYSTAL FORMATION 审中-公开
标题翻译：纳米结构
公开(公告)号：US20080135914A1
公开(公告)日：2008-06-12
申请号：US11771778
申请日：2007-06-29
申请人： Nety M. Krishna , Ralf Hofmann , Kaushal K. Singh , Karl J. Armstrong
发明人： Nety M. Krishna , Ralf Hofmann , Kaushal K. Singh , Karl J. Armstrong
IPC分类号： H01L21/28 , H01L29/788
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/42332
摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm−2, preferably, at least about 8×1012 cm−2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
摘要翻译：在一个实施例中，提供了一种在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于后处理工艺，形成金属纳米晶体并在所述金属纳米晶层上形成介电覆盖层。该方法进一步提供形成金属纳米晶层，其纳米晶密度为至少约5×10 12 cm -2，优选至少约8×10 12 / > cm -2。在一个实例中，金属纳米晶层包含铂，钌或镍。在另一个实施例中，提供了一种在衬底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶层上的中间介电层。一些示例包括10,50,100,200或更多的双层。

6. 发明申请

US20110129594A1 THIN-FILM BATTERY METHODS FOR COMPLEXITY REDUCTION 有权
标题翻译：薄膜电池方法减少复杂性
公开(公告)号：US20110129594A1
公开(公告)日：2011-06-02
申请号：US12882009
申请日：2010-09-14
申请人： Byung-Sung Kwak , Nety M. Krishna
发明人： Byung-Sung Kwak , Nety M. Krishna
IPC分类号： B05D5/12 , B05D1/36 , B05D1/38 , B05D3/10 , B05D3/02 , B05C11/00 , C23C16/448
CPC分类号： H01M4/139 , H01M4/0421 , H01M4/13 , H01M4/62 , H01M6/40 , H01M10/0404 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/0585
摘要： Thin-film battery methods for complexity reduction are described. Processing equipment arrangements suitable to support thin-film battery methods for complexity reduction are also described. Cluster tools to support thin-film battery methods for complexity reduction are also described.
摘要翻译：描述了用于复杂度降低的薄膜电池方法。还描述了适于支持用于复杂性降低的薄膜电池方法的处理设备布置。还描述了用于支持用于复杂度降低的薄膜电池方法的集群工具。

7. 发明授权

US08168318B2 Method for high volume manufacturing of thin film batteries 有权
标题翻译：薄膜电池大批量生产方法
公开(公告)号：US08168318B2
公开(公告)日：2012-05-01
申请号：US12257049
申请日：2008-10-23
申请人： Byung Sung Kwak , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
发明人： Byung Sung Kwak , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
IPC分类号： H01M6/16 , H01M6/18 , H01M6/46
CPC分类号： H01M10/0585 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M2300/0068
摘要： Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.
摘要翻译：提供了概念和方法，以通过消除和/或最小化常规物理（阴影）掩模的使用来降低薄膜电池（TFB）大批量制造的成本和复杂性。激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。在一个实施例中，制造薄膜电池的方法包括提供衬底，在衬底上沉积与薄膜电池结构相对应的层，所述层按沉积顺序包括阴极，电解质和阳极，其中至少沉积层中的一个在沉积期间由物理掩模未图案化，沉积保护涂层，以及划刻层和保护涂层。此外，层的边缘可以被封装层覆盖。此外，可以将这些层沉积在两个基板上，然后层压以形成薄膜电池。

8. 发明申请

US20140072699A1 THIN-FILM BATTERY METHODS FOR COMPLEXITY REDUCTION 审中-公开
标题翻译：薄膜电池方法减少复杂性
公开(公告)号：US20140072699A1
公开(公告)日：2014-03-13
申请号：US14078261
申请日：2013-11-12
申请人： Byung Sung Kwak , Nety M. Krishna
发明人： Byung Sung Kwak , Nety M. Krishna
IPC分类号： H01M4/139
CPC分类号： H01M4/139 , H01M4/0421 , H01M4/13 , H01M4/62 , H01M6/40 , H01M10/0404 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/0585
摘要： Thin-film battery methods for complexity reduction are described. Processing equipment arrangements suitable to support thin-film battery methods for complexity reduction are also described. Cluster tools to support thin-film battery methods for complexity reduction are also described.
摘要翻译：描述了用于复杂度降低的薄膜电池方法。还描述了适于支持用于复杂性降低的薄膜电池方法的处理设备布置。还描述了用于支持用于复杂度降低的薄膜电池方法的集群工具。

9. 发明授权

US08580332B2 Thin-film battery methods for complexity reduction 有权
标题翻译：用于复杂度降低的薄膜电池方法
公开(公告)号：US08580332B2
公开(公告)日：2013-11-12
申请号：US12882009
申请日：2010-09-14
申请人： Byung-Sung Kwak , Nety M. Krishna
发明人： Byung-Sung Kwak , Nety M. Krishna
IPC分类号： B05D5/12 , B05C11/00 , G03G13/16 , C23C16/00
CPC分类号： H01M4/139 , H01M4/0421 , H01M4/13 , H01M4/62 , H01M6/40 , H01M10/0404 , H01M10/0436 , H01M10/052 , H01M10/0562 , H01M10/0585
摘要： Thin-film battery methods for complexity reduction are described. Processing equipment arrangements suitable to support thin-film battery methods for complexity reduction are also described. Cluster tools to support thin-film battery methods for complexity reduction are also described.
摘要翻译：描述了用于复杂度降低的薄膜电池方法。还描述了适于支持用于复杂性降低的薄膜电池方法的处理设备布置。还描述了用于支持用于复杂度降低的薄膜电池方法的集群工具。

10. 发明申请

US20120214047A1 METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES 审中-公开
标题翻译：薄膜电池高容量制造方法
公开(公告)号：US20120214047A1
公开(公告)日：2012-08-23
申请号：US13461286
申请日：2012-05-01
申请人： BYUNG SUNG KWAK , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
发明人： BYUNG SUNG KWAK , Nety M. Krishna , Kurt Eisenbeiser , William J. Dauksher , Jon Candelaria
IPC分类号： H01M4/70 , H01M2/02
CPC分类号： H01M10/0585 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M2300/0068
摘要： Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.
摘要翻译：提供了概念和方法，以通过消除和/或最小化常规物理（阴影）掩模的使用来降低薄膜电池（TFB）大批量制造的成本和复杂性。激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。在一个实施例中，制造薄膜电池的方法包括提供衬底，在衬底上沉积与薄膜电池结构相对应的层，所述层按沉积顺序包括阴极，电解质和阳极，其中至少沉积层中的一个在沉积期间由物理掩模未图案化，沉积保护涂层，以及划刻层和保护涂层。此外，层的边缘可以被封装层覆盖。此外，可以将这些层沉积在两个基板上，然后层压以形成薄膜电池。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式