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1. 发明授权

US5306698A Methods for producing Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 oxide superconductors 失效
标题翻译：生产Tl2Ca2Ba2Cu3氧化物超导体的方法
公开(公告)号：US5306698A
公开(公告)日：1994-04-26
申请号：US775626
申请日：1991-10-10
申请人： Byung T. Ahn , Robert B. Beyers , Wen Y. Lee
发明人： Byung T. Ahn , Robert B. Beyers , Wen Y. Lee
IPC分类号： C01G1/00 , C01G15/00 , C04B35/45 , H01L39/24 , C01F11/02
CPC分类号： H01L39/2451 , C04B35/4512 , Y10S505/73 , Y10S505/731 , Y10S505/742 , Y10S505/783
摘要： Improved processes for making thin film and bulk thallium superconductors are described, as well as Tl superconductors having high critical current densities and low surface impedance. An annealing step in a reduced oxygen atmosphere is used to convert compounds containing thallium, calcium, barium and copper to a Tl-2223 superconducting phase or to convert an oxide having the nominal composition Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x to a crystalline Tl-2223 phase. The oxygen pressure during annealing is controlled to be below the thermodynamic stability limit for conversion of Tl-2223 to Tl-2122 and secondary phases. Temperatures less than 880.degree. C. are used, the oxygen pressure being sufficient to prevent excess thallium loss so that the Tl content in the final Tl-2223 phase is Tl.sub.1.6-2.0. Electrical devices including SQUIDs can be made with these improved superconductors.
摘要翻译：描述了制造薄膜和体积铊超导体的改进方法，以及具有高临界电流密度和低表面阻抗的T1超导体。使用还原氧气氛中的退火步骤将含有铊，钙，钡和铜的化合物转化为Tl-2223超导相，或将具有标称组成为T12Ca2Ba2Cu3Ox的氧化物转化为晶体Tl-2223相。退火过程中的氧气压力控制在低于Tl-2223转化为T1-1222和二次相的热力学稳定性极限。使用低于880℃的温度，氧气压力足以防止过量的铊损失，使得最终Tl-2223相中的T1含量为Tl1.6-2.0。包括SQUID的电气设备可以用这些改进的超导体制成。

2. 发明授权

US5470619A Method of the production of polycrystalline silicon thin films 失效
标题翻译：多晶硅薄膜生产方法
公开(公告)号：US5470619A
公开(公告)日：1995-11-28
申请号：US282643
申请日：1994-07-29
申请人： Byung T. Ahn , Dae G. Moon , Jeong N. Lee
发明人： Byung T. Ahn , Dae G. Moon , Jeong N. Lee
IPC分类号： H01L21/20 , C23C16/24 , C23C16/56 , B05D3/06
CPC分类号： C23C16/56 , C23C16/24
摘要： A method is disclosed for the production of polycrystalline silicon thin films characterized by performing heat treatment of amorphous silicon thin films deposited on a substrate at a relatively low temperature of between 300.degree. and 600.degree. C. under a pressure ranging from 10.sup.-3 to 1 torr. The method can provide polycrystalline silicon thin films having increased grain sizes of about 60-300 .mu.m. In accordance with the method, glass or ceramic substrates can be used instead of an expensive quartz substrate. SiH.sub.4 gas can also be used instead of Si.sub.2 H.sub.6 gas as a source gas. The polycrystalline silicon thin films disclosed have an electron and positive hole mobility closer to that of the level of single crystals, and thus the development of the SOI element having high performance such as TFT for LCD, or TFT for SRAM, and the like may be greatly advanced.
摘要翻译：公开了一种用于生产多晶硅薄膜的方法，其特征在于在300-300℃的较低温度下在10-3至1的压力下对沉积在基底上的非晶硅薄膜进行热处理托尔该方法可以提供具有约60-300μm的增加的晶粒尺寸的多晶硅薄膜。根据该方法，可以使用玻璃或陶瓷基板代替昂贵的石英基板。也可以使用SiH 4气体代替Si 2 H 6气体作为原料气体。公开的多晶硅薄膜具有更接近于单晶层的电子和空穴迁移率，因此具有高性能的SOI元件（诸如LCD的TFT或SRAM的TFT）的发展可以是大大进步。

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