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1. 发明申请

US20150311433A1 SEMICONDUCTOR DEVICE, MAGNETIC MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件，磁存储器件及其制造方法
公开(公告)号：US20150311433A1
公开(公告)日：2015-10-29
申请号：US14606157
申请日：2015-01-27
申请人： Byoungjae BAE , Jongchul PARK , Shin KWON , Inho KIM , Changwoo SUN
发明人： Byoungjae BAE , Jongchul PARK , Shin KWON , Inho KIM , Changwoo SUN
IPC分类号： H01L43/12 , H01L27/22 , H01L43/08
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes forming conductive pillars on a substrate, sequentially forming a sacrificial layer and a molding structure between the conductive pillars, forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars, removing the sacrificial layer to form an air gap, removing the molding structure to form an expanded air gap, and patterning the conductive layer to open the expanded air gap.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成导电柱，在导电柱之间依次形成牺牲层和模制结构，在模制结构上形成导电层，使得导电层连接到导电柱上，去除牺牲层以形成气隙，去除模制结构以形成扩张空气间隙，并且图案化导电层以打开膨胀的气隙。

2. 发明申请

US20160104745A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160104745A1
公开(公告)日：2016-04-14
申请号：US14710740
申请日：2015-05-13
申请人： Jong Chul PARK , Shin Jae KANG , Shin KWON , Kyung Rae BYUN
发明人： Jong Chul PARK , Shin Jae KANG , Shin KWON , Kyung Rae BYUN
IPC分类号： H01L27/22 , H01L43/08 , G11C11/16 , H01L43/02
CPC分类号： H01L27/228 , G11C11/161 , H01L43/10
摘要： A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.
摘要翻译：半导体器件可以包括第一磁性层，其包括构成多个存储器单元并且在衬底上彼此间隔开的多个第一区域，以及包围多个第一区域并与第一区域电隔离的第二区域，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。

3. 发明申请

US20150236251A1 METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE 有权
标题翻译：制造磁阻随机访问存储器件的方法
公开(公告)号：US20150236251A1
公开(公告)日：2015-08-20
申请号：US14533084
申请日：2014-11-04
申请人： Eun-Sun NOH , Jong-Chul PARK , Shin KWON , Hyung-Joon KWON , Chae-Lyoung KIM , Hye-Ji YOON
发明人： Eun-Sun NOH , Jong-Chul PARK , Shin KWON , Hyung-Joon KWON , Chae-Lyoung KIM , Hye-Ji YOON
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/08
摘要： In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures. Each MTJ structure includes a sequentially stacked first magnetic layer pattern, tunnel layer pattern, and second magnetic layer pattern, and each of the MTJ structures contacts a corresponding one of the lower electrodes.
摘要翻译：在制造MRAM器件的方法中，第一牺牲层，蚀刻停止层和第二牺牲层依次形成在衬底上，然后被部分蚀刻以形成通过其的开口。形成下电极以填充开口。去除第一和第二牺牲层和蚀刻停止层的部分以分别形成围绕下部电极的侧壁的上部的蚀刻停止层图案。在蚀刻停止层图案之间形成上部绝缘层图案，以在下部电极之间部分地限定气垫。形成第一磁性层，隧道势垒层，第二磁性层和上电极层，并被蚀刻以形成多个磁性隧道结（MTJ）结构。每个MTJ结构包括顺序堆叠的第一磁性层图案，隧道层图案和第二磁性层图案，并且每个MTJ结构接触相应的一个下部电极。

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