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    • 4. 发明授权
    • Fractional-N frequency synthesizer and method thereof
    • 分数N频率合成器及其方法
    • US07973606B2
    • 2011-07-05
    • US12563903
    • 2009-09-21
    • Yoo Hwan KimYoo Sam NaByeong Hak Jo
    • Yoo Hwan KimYoo Sam NaByeong Hak Jo
    • H03L7/06H03L7/08H03L7/085H03L7/087H03L7/18
    • H03L7/1976H03L7/087
    • The present relates to a fractional-N frequency synthesizer improving noise characteristics and a method thereof. The fractional-N frequency synthesizer includes a reference oscillator that generates a reference frequency signal; a sigma-delta modulator that generates a desired decimal value based on the reference frequency signal; a divider that divides a voltage controlled oscillation frequency signal; first to M phase/frequency detectors that detect a difference in phase and frequency between the reference frequency signal and the divided voltage controlled oscillation frequency signal; first to M charge pumps that are connected to each of the phase/frequency detectors in series and charges or pumps charge amount according to output signals from each of the phase/frequency detectors; a loop filter that controls the amount of supplied current based on output signals from the charge pumps to filter low-pass frequency components; and a voltage controlled oscillator that is oscillated in response to the output signal from the loop filter and generates voltage controlled oscillation frequency signals.
    • 本发明涉及一种提高噪声特性的分数N频率合成器及其方法。 分数N频率合成器包括产生参考频率信号的参考振荡器; 基于所述参考频率信号产生所需十进制值的Σ-Δ调制器; 分压器,其分压电压控制的振荡频率信号; 首先检测参考频率信号和分压电压控制振荡频率信号之间的相位和频率差异的M相/频率检测器; 首先对M个串联的每个相位/频率检测器的泵进行充电,并根据来自每个相位/频率检测器的输出信号对电荷或泵充电量; 环路滤波器,其基于来自电荷泵的输出信号来控制供电电流量以滤除低通频率分量; 以及响应于来自环路滤波器的输出信号而振荡并产生压控振荡频率信号的压控振荡器。
    • 6. 发明授权
    • CMOS power amplifier and temperature compensation circuit thereof
    • CMOS功率放大器及其温度补偿电路
    • US08183928B2
    • 2012-05-22
    • US13069652
    • 2011-03-23
    • Yoo Hwan KimHyun Hwan YooYoo Sam NaByeong Hak Jo
    • Yoo Hwan KimHyun Hwan YooYoo Sam NaByeong Hak Jo
    • H03F3/04
    • H03F1/30H03F1/303H03F2200/447H03F2200/468
    • Disclosed is a CMOS power amplifier. A temperature compensation circuit of a CMOS power amplifier may include: a bias circuit unit supplying a gate bias voltage to a power amplification circuit part; a bias detection unit determining a class type of the power amplification circuit part according to the gate bias voltage; a temperature detection unit detecting a temperature-proportional voltage in proportion to ambient temperature; a temperature compensation control unit generating a compensation control value according to the temperature-proportion voltage in the class type determined by the bias detection unit; and a conversion unit converting the compensation control value of the temperature compensation control unit into a linear bias control value and providing the linear bias control value to the bias circuit unit, wherein the bias circuit unit compensates the gate bias voltage according to the linear bias control value of the conversion unit.
    • 公开了一种CMOS功率放大器。 CMOS功率放大器的温度补偿电路可以包括:向功率放大电路部分提供栅极偏置电压的偏置电路单元; 偏置检测单元,根据栅极偏置电压确定功率放大电路部分的类别; 温度检测单元,其与环境温度成比例地检测温度成比例的电压; 温度补偿控制单元,根据由偏置检测单元确定的类别中的温度比例电压产生补偿控制值; 以及转换单元,将所述温度补偿控制单元的补偿控制值转换为线性偏置控制值,并将所述线性偏置控制值提供给所述偏置电路单元,其中所述偏置电路单元根据所述线性偏置控制来补偿所述栅极偏置电压 转换单位的价值。
    • 7. 发明授权
    • Power amplifier
    • 功率放大器
    • US08093947B2
    • 2012-01-10
    • US12823772
    • 2010-06-25
    • Byeong Hak JoYoo Sam NaMin Sun KimYoo Hwan Kim
    • Byeong Hak JoYoo Sam NaMin Sun KimYoo Hwan Kim
    • H03G3/20
    • H03G3/3042
    • There is provided a power amplifier with a variable supply of bias power according to a look-up table having a voltage value determined based on a level of an RF signal being input to the power amplifier to thereby increase power efficiency. A power amplifier according to an aspect of the invention may include an amplification section amplifying an input signal according to a bias voltage being supplied; and a bias supply section comparing a level of the input signal with a look-up table set in advance and supplying a bias voltage to the amplification section according to a result of the comparison.
    • 根据具有基于输入到功率放大器的RF信号的电平确定的电压值的查找表,提供具有可变偏置电源的功率放大器,从而提高功率效率。 根据本发明的一个方面的功率放大器可以包括放大部分,其根据所提供的偏置电压来放大输入信号; 以及偏置电源部,其将输入信号的电平与预先设定的查找表进行比较,并根据比较结果向放大部提供偏置电压。
    • 8. 发明申请
    • BIAS CONTROLLING APPARATUS
    • 偏差控制装置
    • US20130082777A1
    • 2013-04-04
    • US13370227
    • 2012-02-09
    • Hyun Hwan YooYoo Hwan KimYoo Sam Na
    • Hyun Hwan YooYoo Hwan KimYoo Sam Na
    • H03F3/45
    • H03F1/301H03F3/193H03F3/245H03F2200/447H03F2200/555
    • The present invention includes: a temperature compensation circuit for generating a digital signal corresponding to a temperature of a transistor and outputting a compensation bias current obtained by adding a control current to a reference bias current or by subtracting the control signal from the reference bias current using the generated digital signal; a characteristics compensation circuit for detecting a characteristics error of a mirror transistor connected to the transistor in parallel and for outputting a compensation signal to compensate the characteristics error; and a bias compensation circuit for compensating a bias power applied to the transistor using the compensation bias current and the compensation signal to output the compensated bias power. The present invention is capable of improving the performance of the transistor.
    • 本发明包括:温度补偿电路,用于产生对应于晶体管的温度的数字信号,并输出通过将控制电流加到参考偏置电流而获得的补偿偏置电流,或者通过使用 生成的数字信号; 特性补偿电路,用于并联检测连接到晶体管的反射镜晶体管的特性误差,并输出补偿信号以补偿特性误差; 以及偏置补偿电路,用于使用补偿偏置电流和补偿信号来补偿施加到晶体管的偏置功率,以输出补偿的偏置功率。 本发明能够提高晶体管的性能。
    • 9. 发明授权
    • Bias controlling apparatus
    • 偏压控制装置
    • US08531243B2
    • 2013-09-10
    • US13370227
    • 2012-02-09
    • Hyun Hwan YooYoo Hwan KimYoo Sam Na
    • Hyun Hwan YooYoo Hwan KimYoo Sam Na
    • H03F3/04
    • H03F1/301H03F3/193H03F3/245H03F2200/447H03F2200/555
    • The present invention includes: a temperature compensation circuit for generating a digital signal corresponding to a temperature of a transistor and outputting a compensation bias current obtained by adding a control current to a reference bias current or by subtracting the control signal from the reference bias current using the generated digital signal; a characteristics compensation circuit for detecting a characteristics error of a mirror transistor connected to the transistor in parallel and for outputting a compensation signal to compensate the characteristics error; and a bias compensation circuit for compensating a bias power applied to the transistor using the compensation bias current and the compensation signal to output the compensated bias power. The present invention is capable of improving the performance of the transistor.
    • 本发明包括:温度补偿电路,用于产生对应于晶体管的温度的数字信号,并输出通过将控制电流加到参考偏置电流而获得的补偿偏置电流,或者通过使用 生成的数字信号; 特性补偿电路,用于并联检测连接到晶体管的反射镜晶体管的特性误差,并输出补偿信号以补偿特性误差; 以及偏置补偿电路,用于使用补偿偏置电流和补偿信号来补偿施加到晶体管的偏置功率,以输出补偿的偏置功率。 本发明能够提高晶体管的性能。