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1. 发明授权

US5456206A Method for two-dimensional epitaxial growth of III-V compound semiconductors 失效
标题翻译： III-V化合物半导体的二维外延生长方法
公开(公告)号：US5456206A
公开(公告)日：1995-10-10
申请号：US350451
申请日：1994-12-07
申请人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
发明人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
IPC分类号： H01L21/20
CPC分类号： H01L21/02502 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： A method for growing a thin InGaAs or InAlAs layer with heavy lattice mismatching on a GaAs substrate by a MOCVD process is described. A first material gas is injected by a MOCVD process to grow a buffer layer on a GaAs substrate to a prescribed thickness. After stopping the injection of the first material gas for a few seconds, a second material gas containing a column III element is injected at a prescribed temperature. A third material gas containing a column V element is injected to grow, on the buffer layer, a thin metallic layer of a binary compound containing the column III element of a high concentration to a thickness of 2 nm or less. After a prescribed time from the injection of the third material gas, In and Ga gases or In and Al gases, mixed in the prescribed proportion are injected in an atmosphere of said third material gas to grow a thin InGaAs or InAlAs layer on the thin metallic layer.
摘要翻译：描述了通过MOCVD工艺在GaAs衬底上生长具有重晶格失配的薄InGaAs或InAlAs层的方法。通过MOCVD法注入第一材料气体，以在GaAs衬底上生长规定厚度的缓冲层。在停止喷射第一原料气体几秒钟后，在规定温度下注入含有III族元素的第二原料气体。注入含有V族元素的第三材料气体，在缓冲层上生长含有高浓度的III族元素的二元化合物的薄金属层，厚度为2nm以下。在注入第三原料气体的规定时间后，在所述第三原料气体的气氛中注入以规定比例混合的In和Ga气体或In和Al气体，以在薄金属上生长薄的InGaAs或InAlAs层层。

2. 发明授权

US5686350A Method for fabricating defect-free compound semiconductor thin film on dielectric thin film 失效
标题翻译：在电介质薄膜上制造无缺陷化合物半导体薄膜的方法
公开(公告)号：US5686350A
公开(公告)日：1997-11-11
申请号：US350022
申请日：1994-11-29
申请人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
发明人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
IPC分类号： C30B29/42 , H01L21/20 , H01L21/205 , H01L21/316 , H01L27/12
CPC分类号： H01L21/02178 , H01L21/02241 , H01L21/02255 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02573 , H01L21/02664 , H01L21/31666 , Y10S438/902 , Y10S438/907 , Y10S438/967
摘要： A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film containing a carbon impurity of a high concentration and made of AlGaAs series by an annealing at a vapor ambient, thereby rapidly growing a hetero-semiconductor thin film over a dielectric thin film made of Al.sub.2 O.sub.3 with no defect.
摘要翻译：一种用于在电介质薄膜上制造无缺陷的化合物半导体薄膜的方法，该方法在由包含由GaAs，InGaAs或InAs中的一种构成的杂化化合物半导体薄膜上氧化多个半导体层，该半导体薄膜含有高浓度并且由AlGaAs系列制成，通过在蒸汽环境下进行退火，从而在由Al 2 O 3制成的无电介质薄膜上快速生长异质半导体薄膜。

3. 发明授权

US5900056A Method for growing epitaxial layers of III-V compound semiconductors 失效
标题翻译：生长III-V族化合物半导体外延层的方法
公开(公告)号：US5900056A
公开(公告)日：1999-05-04
申请号：US769242
申请日：1996-12-18
申请人： Sung-Woo Choi , Jong-Hyeob Baek , Bun Lee
发明人： Sung-Woo Choi , Jong-Hyeob Baek , Bun Lee
IPC分类号： H01L21/20 , C30B25/10 , C30B25/14
CPC分类号： C30B25/105 , C30B29/40
摘要： The present invention relates to a method for growing new binary, ternary and quaternary epitaxial layers of III-V compound semiconductors which have the characteristics of low temperature growth, good stability and high-purity, using remote plasma, comprising the steps of converting H.sub.2 and He mixed gas into a plasma state; heating a high-purity of solid source to generate a vaporized source; reacting the vaporized source with H.sub.2 under the H.sub.2 and He plasma environment to produce V-hydrides in situ; introducing the V-hydrides directly into group III source without passing through the plasma; and reacting V-hydrides with group III source on a substrate to form an epitaxial thin layer of III-V compound semiconductors. According to the present invention, high-purity of epitaxial thin layer can be formed at a low temperature, an economical process that does not require an ultrahigh vacuum, a stabilized process that does not need to handle poisonous gas for the reaction with gropu V, and a simple process for manufacturing the various binary, ternary and quaternary compound semiconductor alloys can be provided. Thus, the method of the present invention can be applied to the future information and communication industry, for example, high speed, high frequency optical communication system with (Ga, In, Al)--(As, P, Sb) based on III-V compound semiconductor electronic and optical devices, and the circuitry thereof including heterojunction bipolar transistors, high electron mobility transistors, semiconductor lasers and optical switches.
摘要翻译：本发明涉及一种利用远程等离子体生长具有低温生长特性，稳定性好，高纯度等特点的III-V族化合物半导体二元，三元和四元外延层的方法，包括以下步骤：将H 2和他将气体混合成等离子体状态; 加热高纯度固体源以产生蒸发源; 在H 2和He等离子体环境下使蒸发源与H 2反应，原位产生V-氢化物; 将V型氢化物直接引入III族源而不通过等离子体; 并将V型氢化物与III族源反应在衬底上以形成III-V族化合物半导体的外延薄层。根据本发明，可以在低温下形成高纯度的外延薄层，不需要超高真空的经济工艺，不需要处理有毒气体用于与gropu V反应的稳定过程，并且可以提供制造各种二元，三元和四元化合物半导体合金的简单方法。因此，本发明的方法可以应用于将来信息通信行业，例如具有（Ga，In，Al） - （As，P，Sb）的高速，高频光通信系统， V化合物半导体电子和光学器件，其电路包括异质结双极晶体管，高电子迁移率晶体管，半导体激光器和光开关。

4. 发明授权

US5855669A Method for fabricating grating coupler 失效
标题翻译：光栅耦合器的制作方法
公开(公告)号：US5855669A
公开(公告)日：1999-01-05
申请号：US842872
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B6/293 , C30B25/02 , G02B5/18 , G02B6/122 , G02B6/124 , G02B6/34 , H01L21/203 , C30B25/16
CPC分类号： C30B25/02 , C30B29/40 , G02B6/124 , G02B6/34
摘要： A grating coupler is formed by growing an optical waveguide layer on a substrate by an epitaxial growing process such as a metalorganic chemical vapor deposition and a molecular beam deposition. The optical waveguide layer has a surface on which a cross-hatch pattern serving as the grating is continuously formed. The optical waveguide layer is formed with a material having a reflective index greater than a reflective index of the substrate or an atmosphere. Specifically, the substrate is formed with GaAs and the optical waveguide layer is formed with InGaAs. Further, the substrate is an on-substrate having an orientation coinciding with a �100! plane, so as to form the optical waveguide layer having continuous cross-hatch patterns on the surface thereof. The spacing between the cross-hatch patterns can be varied according to variation of a growth temperature of the optical waveguide layer.
摘要翻译：通过外延生长工艺如金属有机化学气相沉积和分子束沉积在衬底上生长光波导层来形成光栅耦合器。光波导层具有连续形成用作光栅的交叉影线图案的表面。光波导层由具有大于基板的反射率或大气的反射率的材料形成。具体地，基板由GaAs形成，并且光波导层由InGaAs形成。此外，基板是具有与[100]面重合的取向的基板，从而在其表面上形成具有连续交叉图案的光波导层。交叉线图案之间的间隔可以根据光波导层的生长温度的变化而变化。

5. 发明授权

US5856206A Method for fabricating bragg reflector using in situ laser reflectometry 失效
标题翻译：使用原位激光反射法制造布拉格反射器的方法
公开(公告)号：US5856206A
公开(公告)日：1999-01-05
申请号：US842871
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B5/08 , C23C14/54 , C23C16/52 , C30B29/40 , H01L21/205 , H01S5/00 , H01S5/028 , H01S5/183 , H01S5/187 , C23C14/00
CPC分类号： C23C16/52 , H01S5/0042 , H01S5/18361
摘要： A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness.
摘要翻译：具有均匀厚度的布拉格反射器通过原位激光反射计制造。为了制造布拉格反射器，在半导体衬底上形成多个缓冲层。然后，在缓冲层上交替生长第一和第二外延层。在生长外延层的同时，通过使用具有与布拉格反射器的反射波长相同的波长的激光束来连续测量第一和第二外延层的厚度。以这种方式，根据测量精确地控制布拉格反射器的厚度，使得可以以预定厚度均匀地制造布拉格反射器。

6. 发明授权

US5705403A Method of measuring doping characteristic of compound semiconductor in real time 失效
标题翻译：实时测量化合物半导体掺杂特性的方法
公开(公告)号：US5705403A
公开(公告)日：1998-01-06
申请号：US696092
申请日：1996-08-13
申请人： Jong-Hyeob Baek , Bun Lee , Jin-Hong Lee , Sung-Woo Choi
发明人： Jong-Hyeob Baek , Bun Lee , Jin-Hong Lee , Sung-Woo Choi
IPC分类号： G01N21/17 , G01N21/31 , H01L21/205 , H01L21/66 , H01L33/30 , H01L21/00
CPC分类号： H01L21/02579 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.
摘要翻译：一种实时检测半导体掺杂杂质的浓度的方法，以及在生长中使用实时分析装置时由于掺杂而引起的生长条件变化之间的随时间的变化而检测其生长速度变化的方法通过MOCVD方法的异质结构半导体。通过实时分析装置生长期间的反射信号具有周期性质，当在外延层上存在吸收时，反射信号的振幅变化取决于吸收系数，可以通过使用吸收系数与杂质浓度的关系。另外，如果独立地分析每个峰，则分别测量相应于时间的生长速率，从而在碳掺杂的AlAs层中感测到依赖于生长速率的时间的降低的生长速率。

7. 发明授权

US5472505A Apparatus for monitoring films during MOCVD 失效
标题翻译：用于在MOCVD期间监测膜的装置
公开(公告)号：US5472505A
公开(公告)日：1995-12-05
申请号：US359198
申请日：1994-12-19
申请人： Bun Lee , Dug-Bong Kim , Jong-Hyeob Baek
发明人： Bun Lee , Dug-Bong Kim , Jong-Hyeob Baek
IPC分类号： C23C16/52 , C30B25/02 , C23C14/00
CPC分类号： C30B25/02 , C23C16/52 , Y10T117/10 , Y10T117/1004
摘要： An apparatus for monitoring a film growth is disclosed, in which, when a crystalline thin film is grown by applying an MOCVD (metalorganic chemical vapor deposition method), the variation of the thickness and composition due to certain factors can be detected with real time during the film growing process, and an in-situ adjustment is possible. As the optical detector for detecting two sets of reflected beams which are reflected from the film, a silicon detector and a germanium detector are used, the former being suitable for detecting short wavelength laser beams, and the latter being suitable for detecting long wavelength laser beams. Thus two different wavelengths are detected with real time, thereby measuring the thickness and composition of the film.
摘要翻译：公开了一种用于监测膜生长的装置，其中当通过施加MOCVD（金属有机化学气相沉积法）生长结晶薄膜时，可以实时检测由于某些因素导致的厚度和组成的变化成膜过程和原位调整是可能的。作为用于检测从膜反射的两组反射光束的光检测器，使用硅检测器和锗检测器，前者适用于检测短波长激光束，后者适用于检测长波长激光束。因此，实时检测两个不同的波长，从而测量膜的厚度和组成。

8. 发明授权

US5883911A Surface-emitting laser device 失效
标题翻译：表面发射激光器件
公开(公告)号：US5883911A
公开(公告)日：1999-03-16
申请号：US742160
申请日：1996-11-01
申请人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
发明人： Bun Lee , Jong-Hyeob Baek , Sung-Woo Choi , Jin-Hong Lee
IPC分类号： H01S3/00 , H01S5/183 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S2301/173 , H01S5/1053 , H01S5/18319 , H01S5/3205 , H01S5/3215 , H01S5/3406 , H01S5/34313
摘要： An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.
摘要翻译：由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长通过使用具有高反射率的反射器在室温下进行。因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

9. 发明授权

US5748319A Method for sensing complete removal of oxide layer from substrate by thermal etching with real time 失效
标题翻译：用于通过热蚀刻实时感测从衬底完全去除氧化物层的方法
公开(公告)号：US5748319A
公开(公告)日：1998-05-05
申请号：US671842
申请日：1996-06-28
申请人： Jong-Hyeob Baek , Bun Lee , Sung-Woo Choi , Jin-Hong Lee
发明人： Jong-Hyeob Baek , Bun Lee , Sung-Woo Choi , Jin-Hong Lee
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065
CPC分类号： G01B11/0683
摘要： A method for sensing the completion of removal of an oxide layer from a semiconductor substrate or a super conductor by a thermal etching in real time. In the method, the time of removal of the oxide layer on the semiconductor substrate or the super conductor can ben accurately sensed. According to the method, when an oxide layer which is different from the semiconductor substrate in the refractive index is being thermally etched at a high temperature, the reflected signals of the laser beams forms a periodicity, and this periodicity is utilized so as to determine the etching rate and the time of the completion of the etching.
摘要翻译：一种用于通过热蚀刻实时地感测从半导体衬底或超导体去除氧化物层的完成的方法。在该方法中，可以准确地感测去除半导体衬底或超导体上的氧化物层的时间。根据该方法，当在高温下热蚀刻与折射率不同的半导体衬底的氧化物层时，激光束的反射信号形成周期性，并且利用该周期性来确定蚀刻速率和蚀刻完成的时间。

10. 发明申请

US20100295087A1 Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US20100295087A1
公开(公告)日：2010-11-25
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/02 , H01L33/42 , H01L33/62
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

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