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1. 发明授权

US06444381B1 Electron beam flood exposure technique to reduce the carbon contamination 有权
标题翻译：电子束泛滥技术减少碳污染
公开(公告)号：US06444381B1
公开(公告)日：2002-09-03
申请号：US09729295
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S430/143
摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要翻译：本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

2. 发明授权

US06423479B1 Cleaning carbon contamination on mask using gaseous phase 失效
标题翻译：使用气相清洁面罩上的碳污染
公开(公告)号：US06423479B1
公开(公告)日：2002-07-23
申请号：US09495165
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F726
CPC分类号： G03F1/82
摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要翻译：在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。

3. 发明授权

US06371134B1 Ozone cleaning of wafers 有权
公开(公告)号：US06371134B1
公开(公告)日：2002-04-16
申请号：US09495014
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： B08B700
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

4. 发明授权

US06451512B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
标题翻译： UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性
公开(公告)号：US06451512B1
公开(公告)日：2002-09-17
申请号：US09565691
申请日：2000-05-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
摘要翻译：在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或在开发超薄抗蚀剂后。

5. 发明授权

US06459482B1 Grainless material for calibration sample 失效
标题翻译：用于校准样品的粗糙材料
公开(公告)号：US06459482B1
公开(公告)日：2002-10-01
申请号：US09729294
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G01J110
CPC分类号： H01J37/28 , H01J2237/2826
摘要： The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.
摘要翻译：本发明提供SEM系统，SEM校准标准和SEM校准方法，提高了临界尺寸测量的精度。校准标准品具有非晶体材料如非晶硅形成的特征。无定形材料缺乏诸如多晶硅的材料的晶粒结构，并且能够提供比颗粒材料更尖锐的边缘特征和更高精度的图案。非晶材料可以通过诸如二氧化硅的材料的中间层与硅晶片衬底结合。在中间层是绝缘材料的情况下，如二氧化硅那样，中间层可以用间隙图案化以提供非晶硅和硅晶片之间的电连通。因此，在电子束扫描期间赋予非晶硅的电荷可以从而被排出到硅晶片，而不是积聚到它们会使电子束变形的水平。

6. 发明授权

US06190062B1 Cleaning chamber built into SEM for plasma or gaseous phase cleaning 有权
标题翻译：内置扫描电镜的清洗室进行等离子体或气相清洗
公开(公告)号：US06190062B1
公开(公告)日：2001-02-20
申请号：US09558492
申请日：2000-04-26
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03D1300
CPC分类号： H01J37/28 , H01J2237/2817
摘要： One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber of the SEM; inspecting the patterned resist using an electron beam generated by the SEM; and introducing a cleaner containing ozone into the processing chamber of the SEM. Another aspect of the present invention relates to a system for processing a patterned substrate, containing a charge sensor for determining if charges exist on the patterned substrate and measuring the charges; a means for contacting the patterned substrate with a cleaner containing ozone to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned substrate and the cleaner, temperature of the cleaner, concentration of ozone in the cleaner, and pressure under which contact between the patterned substrate and the cleaner occurs; and a device for inspecting the patterned substrate with an electron beam.
摘要翻译：本发明的一个方面涉及使用SEM检查图案化衬底的方法，包括以下步骤：评估图案化衬底以确定其中是否存在电荷; 将具有电荷的图案化衬底引入到SEM的处理室中; 使用由SEM产生的电子束检查图案化的抗蚀剂; 并将含有臭氧的清洁剂引入SEM的处理室。本发明的另一方面涉及一种用于处理图案化衬底的系统，其包含用于确定在图案化衬底上是否存在电荷并测量电荷的电荷传感器; 用于使图案化基底与含有臭氧的清洁剂接触以降低其上的电荷的装置; 用于设置图案化基板和清洁器之间的接触时间中的至少一个的控制器，清洁器的温度，清洁器中的臭氧浓度以及图案化基板和清洁器之间的接触发生的压力; 以及用于用电子束检查图案化衬底的装置。

7. 发明授权

US06373053B1 Analysis of CD-SEM signal to detect scummed/closed contact holes and lines 有权
标题翻译：分析CD-SEM信号以检测浮渣/闭合接触孔和管线
公开(公告)号：US06373053B1
公开(公告)日：2002-04-16
申请号：US09495281
申请日：2000-01-31
申请人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur , Khoi A. Phan
发明人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur , Khoi A. Phan
IPC分类号： G01N2300
CPC分类号： G01N21/9501 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A system is provided for detecting scumming in a wafer. The system includes an analysis system for providing a signal corresponding to a surface portion of the wafer and a processing system operatively coupled to the analysis system. The processing system is configured to determine a shape of at least a portion of the signal and, the processing system detects scumming in the wafer based upon the shape of at least a portion of the signal.
摘要翻译：提供了一种用于检测晶片中的浮渣的系统。该系统包括用于提供对应于晶片的表面部分的信号的分析系统和可操作地耦合到分析系统的处理系统。处理系统被配置为确定信号的至少一部分的形状，并且处理系统基于信号的至少一部分的形状来检测晶片中的浮渣。

8. 发明授权

US06396059B1 Using a crystallographic etched silicon sample to measure and control the electron beam width of a SEM 失效
标题翻译：使用晶体蚀刻硅样品来测量和控制SEM的电子束宽度
公开(公告)号：US06396059B1
公开(公告)日：2002-05-28
申请号：US09612807
申请日：2000-07-10
申请人： Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： H01J3726
CPC分类号： H01J37/263
摘要： A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sharp due to the fact the edge of the profile has zero width. Therefore, any apparent width seen in the signal is a function of the electron beam width alone. Scanning the beam across the profile provides a signal that moves from a first state to a second state. The time period or sloping portion of the signal from the first state to the second state provides a direct correlation to the electron beam width. Thus, scanning across the sample allows for a calculation of the electron beam width. By scanning across features of different orientations, the shape of the electron beam can be determined. Alternatively, by rotating the electron beam and scanning across the same feature, the shape of the electron beam can be determined. A system can utilize this information to adjust the resolution of the SEM or a display displaying the image.
摘要翻译：提供了一种系统和方法，用于测量和确定使用具有重新插入截面轮廓的晶体蚀刻样品的SEM成像系统的分辨率。采用重入或负曲线，因为SEM所看到的自上而下的观点非常尖锐，这是因为轮廓的边缘具有零宽度。因此，信号中看到的任何视在宽度都是单独的电子束宽度的函数。在横截面上扫描光束提供从第一状态移动到第二状态的信号。从第一状态到第二状态的信号的时间段或倾斜部分提供与电子束宽度的直接相关。因此，扫描样本允许计算电子束宽度。通过扫描不同取向的特征，可以确定电子束的形状。或者，通过旋转电子束并扫过相同的特征，可以确定电子束的形状。系统可以利用该信息来调整SEM的分辨率或显示图像的显示。

9. 发明授权

US06829380B1 Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system 失效
标题翻译：在低电压CD-SEM系统上利用高级算法优化OPC设计因子
公开(公告)号：US06829380B1
公开(公告)日：2004-12-07
申请号：US09642959
申请日：2000-08-21
申请人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
发明人： Bryan K. Choo , Bhanwar Singh , Sanjay K. Yedur
IPC分类号： G06K900
CPC分类号： G03F7/70616 , G03F7/70441 , G03F7/70625
摘要： A system for evaluating optical proximity corrected (OPC) designs is provided. The system includes an analysis system for performing measurements relating to a segment of a feature. The analysis system is configured to determine a first image for the segment of the feature based upon the measurements. The analysis system determines a second image to facilitate analysis of the first image and evaluates OPC designs based upon comparisons of the first and second image.
摘要翻译：提供了一种用于评估光学邻近校正（OPC）设计的系统。该系统包括用于执行与特征的段相关的测量的分析系统。分析系统被配置为基于测量来确定特征的段的第一图像。分析系统确定第二图像以便于分析第一图像，并且基于第一和第二图像的比较来评估OPC设计。

10. 发明授权

US06452161B1 Scanning probe microscope having optical fiber spaced from point of hp 失效
标题翻译：扫描探针显微镜，其具有与尖端点间隔开的光纤
公开(公告)号：US06452161B1
公开(公告)日：2002-09-17
申请号：US09536529
申请日：2000-03-28
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Carmen L. Morales
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo , Carmen L. Morales
IPC分类号： H01J314
CPC分类号： G01Q30/02 , G01Q70/02 , Y10S977/868
摘要： A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sensor associated with a cantilever assembly. The optical sensor may comprise a charge coupled device or other solid state camera and may be fabricated on the cantilever and/or the tip. In addition, a scanning tip assembly is provided for a scanning probe microscope having an optical fiber adapted to receive reflected light from the at least a portion of the workpiece. The scanning tip may be employed in an AFM or other scanning probe microscope, thereby providing simultaneous viewing and scanning of a workpiece surface. Also provided is a measuring apparatus comprising a scanning probe microscope having an optical fiber adapted to receive reflected light from a feature of a workpiece, and a camera connected to the optical fiber to provide a visual image based on the reflected light from the feature of the workpiece.
摘要翻译：提供了一种测量系统和装置，其中扫描探针显微镜包括适于在扫描探针尖端下方观察工件的一部分的高分辨率光学传感器。还提供了具有悬臂/尖端组件和与悬臂组件相关联的光学传感器的扫描末端组件。光学传感器可以包括电荷耦合器件或其他固态照相机，并且可以制造在悬臂和/或尖端上。此外，为扫描探针显微镜提供扫描头组件，其具有适于接收来自工件的至少一部分的反射光的光纤。扫描尖端可以用在AFM或其他扫描探针显微镜中，从而提供对工件表面的同时观察和扫描。还提供了一种包括扫描探针显微镜的测量装置，该扫描探针显微镜具有适于接收来自工件特征的反射光的光纤，以及连接到光纤的照相机，以基于来自该特征的反射光提供视觉图像工件。

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