专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060038227A1 Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures 有权
标题翻译：应变绝缘体上半导体结构和制造应变半导体绝缘体上结构的方法
公开(公告)号：US20060038227A1
公开(公告)日：2006-02-23
申请号：US11196866
申请日：2005-08-03
申请人： Bruce Aitken , Kishor Gadkaree , Matthew Dejneka , Linda Pinckney
发明人： Bruce Aitken , Kishor Gadkaree , Matthew Dejneka , Linda Pinckney
IPC分类号： H01L27/01
CPC分类号： H01L21/76254
摘要： The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.
摘要翻译：本发明涉及具有应变半导体层的绝缘体上半导体结构。根据本发明的一个实施例，绝缘体上半导体结构具有包括半导体材料的第一层，该半导体材料附着到包括玻璃或玻璃陶瓷的第二层上，其中半导体的CTE和玻璃或玻璃陶瓷被选择使得第一层处于拉伸应变。本发明还涉及制造应变绝缘体上半导体层的方法。

2. 发明申请

US20060038228A1 High strain glass/glass-ceramic containing semiconductor-on-insulator structures 有权
公开(公告)号：US20060038228A1
公开(公告)日：2006-02-23
申请号：US11207122
申请日：2005-08-17
申请人： Bruce Aitken , Matthew Dejneka , Kishor Gadkaree , Linda Pinckney
发明人： Bruce Aitken , Matthew Dejneka , Kishor Gadkaree , Linda Pinckney
IPC分类号： H01L27/12
CPC分类号： H01L27/1203 , C03C3/06 , C03C3/085 , C03C3/095 , C03C3/097 , C03C3/11 , C03C10/00 , C03C10/0009 , C03C10/0018 , C03C10/0027 , C03C10/0036 , C03C10/0045 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78603
摘要： The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.

3. 发明申请

US20070166947A1 Germanium on glass and glass-ceramic structures 失效
标题翻译：锗玻璃和玻璃陶瓷结构
公开(公告)号：US20070166947A1
公开(公告)日：2007-07-19
申请号：US11415732
申请日：2006-05-01
申请人： Kishor Gadkaree , Paul Danielson , Matthew Dejneka , Josef Lapp , Linda Pinckney
发明人： Kishor Gadkaree , Paul Danielson , Matthew Dejneka , Josef Lapp , Linda Pinckney
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L29/78603 , H01L29/78684
摘要： A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.
摘要翻译：一种绝缘体上半导体结构，其包括直接或通过一个或多个中间层彼此附接的第一和第二层。第一层包括基本上单晶锗半导体材料，而第二层包括玻璃或具有线性系数热膨胀系数（25-300℃）的玻璃 - 陶瓷材料，该热膨胀系数在+/- 20x10 < 锗锗第一层膨胀的线性系数热的SUP> -7℃/℃。

4. 发明申请

US20050255670A1 Glass-based SOI structures 有权
标题翻译：基于玻璃的SOI结构
公开(公告)号：US20050255670A1
公开(公告)日：2005-11-17
申请号：US11150392
申请日：2005-06-10
申请人： James Couillard , Kishor Gadkaree , Joseph Mach
发明人： James Couillard , Kishor Gadkaree , Joseph Mach
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007
摘要： A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.
摘要翻译：在玻璃结构上形成半导体的方法包括：在半导体晶片上建立剥离层; 使所述半导体晶片的剥离层与玻璃基板接触; 在没有真空气氛的情况下向半导体晶片和玻璃基板施加压力，温度和电压，使得通过电解在其间建立结合; 并且施加应力使得剥离层与半导体晶片分离并保持结合到玻璃基板。

5. 发明申请

US20070117354A1 Large area semiconductor on glass insulator 失效
标题翻译：玻璃绝缘子大面积半导体
公开(公告)号：US20070117354A1
公开(公告)日：2007-05-24
申请号：US11517908
申请日：2006-09-08
申请人： Kishor Gadkaree , Alexandre Mayolet
发明人： Kishor Gadkaree , Alexandre Mayolet
IPC分类号： H01L21/20
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.
摘要翻译：方法和装置提供使多个施主半导体晶片的相应第一表面与玻璃基板接触; 使用电解将多个施主半导体晶片的第一表面与玻璃基板接合; 将所述多个施主半导体晶片与所述玻璃基板分离，留下结合到所述玻璃基板的各剥离层; 以及在剥离层的暴露表面上沉积另外的半导体层以增加剥离层的厚度。

6. 发明申请

US20060240275A1 Flexible display substrates 审中-公开
标题翻译：灵活的显示基板
公开(公告)号：US20060240275A1
公开(公告)日：2006-10-26
申请号：US11393483
申请日：2006-03-29
申请人： Kishor Gadkaree
发明人： Kishor Gadkaree
IPC分类号： B32B15/00
CPC分类号： H01L21/76254 , H01L21/76251 , Y10T428/12674
摘要： Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films.
摘要翻译：用于将半导体材料转移到聚合物基底以提供柔性半导体材料的方法包括将离子注入到半导体衬底中的预定深度，对离子注入的半导体衬底进行一段时间的热处理和有效引起缺陷形成的温度并且植入的离子缺陷的放大，将离子注入的经热处理的衬底粘合到聚合物衬底上，并从半导体衬底分离诸如单晶硅膜的半导体膜; 以及具有直接或间接设置在聚合物膜上的单晶硅膜的器件。

7. 发明申请

US20050266658A1 Glass-based SOI structures 失效
标题翻译：基于玻璃的SOI结构
公开(公告)号：US20050266658A1
公开(公告)日：2005-12-01
申请号：US11177772
申请日：2005-07-08
申请人： James Couillard , Kishor Gadkaree , Joseph Mach
发明人： James Couillard , Kishor Gadkaree , Joseph Mach
IPC分类号： H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007
摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
摘要翻译：提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的，并且优选具有小于1000℃的应变点，250℃下的电阻率小于或等于10 16Ω- 并且包含响应于升高的温度（例如，300-1000℃）下的电场而可在玻璃或玻璃陶瓷内移动的正离子（例如碱金属或碱土离子）。半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。

8. 发明申请

US20050103232A1 Composition and method for making ceramic filters 审中-公开
标题翻译：陶瓷过滤器的组成和方法
公开(公告)号：US20050103232A1
公开(公告)日：2005-05-19
申请号：US10716820
申请日：2003-11-19
申请人： Kishor Gadkaree , Joseph Mach
发明人： Kishor Gadkaree , Joseph Mach
IPC分类号： C04B28/26 , C04B38/00 , C04B12/04
CPC分类号： C04B38/0012 , C04B28/26 , C04B2111/00793 , C04B2111/12 , C04B14/042 , C04B14/10 , C04B14/303 , C04B14/305 , C04B14/324
摘要： The channel-plugging of porous ceramic honeycombs to provide wall flow filter bodies therefrom is carried out using water-based cements comprising ceramic powders and soluble alkali metal silicates; the cements form durable plugs that are resistant to thermal and chemical damage upon drying and without firing.
摘要翻译：使用包含陶瓷粉末和可溶性碱金属硅酸盐的水性粘合剂进行多孔陶瓷蜂窝体的通道堵塞从而提供壁流过滤体，水泥形成耐久的塞子，其耐干燥和不燃烧时耐热和化学损坏。

9. 发明申请

US20070277489A1 Composite coatings for thin-walled ceramic honeycomb structures 有权
标题翻译：薄壁陶瓷蜂窝结构复合涂层
公开(公告)号：US20070277489A1
公开(公告)日：2007-12-06
申请号：US11213179
申请日：2005-08-26
申请人： Kishor Gadkaree , Susan Lauderdale , Joseph Mach , Deborah Shanley
发明人： Kishor Gadkaree , Susan Lauderdale , Joseph Mach , Deborah Shanley
IPC分类号： B01D39/20
CPC分类号： B01D39/2068 , C04B41/009 , C04B41/5089 , C04B41/85 , C04B2111/0081 , Y10S55/05 , Y10S55/10 , Y10S55/30 , C04B41/5059 , C04B41/5024 , C04B35/00 , C04B35/195 , C04B38/0006
摘要： A ceramic honeycomb product comprising a thin-walled ceramic honeycomb structure incorporating a plurality of parallel channels bounded by thin channel walls traversing the body from a first end face to a second end face thereof; and a composite coating disposed on at least one end face of the structure comprising a powder of an abrasion-resistant ceramic dispersed in a dried siliceous matrix.
摘要翻译：一种陶瓷蜂窝产品，其包括：薄壁陶瓷蜂窝结构，其包括多个平行通道，所述多个平行通道由从所述主体的第一端面到其第二端面穿过的薄的通道壁限定; 以及复合涂层，其设置在所述结构的至少一个端面上，包括分散在干燥硅质基质中的耐磨陶瓷粉末。

10. 发明申请

US20070265161A1 Activated carbon honeycomb catalyst beds and methods for the manufacture of same 审中-公开
标题翻译：活性炭蜂窝催化剂床及其制造方法
公开(公告)号：US20070265161A1
公开(公告)日：2007-11-15
申请号：US11433196
申请日：2006-05-11
申请人： Kishor Gadkaree , Youchun Shi
发明人： Kishor Gadkaree , Youchun Shi
IPC分类号： C01B31/08
CPC分类号： B01D53/8665 , B01D53/02 , B01D53/64 , B01D2253/3425 , B01D2255/702 , B01D2257/60 , B01D2257/602 , B01D2259/41
摘要： Disclosed herein, without limitation, are activated carbon honeycomb catalyst beds for removing mercury and other toxic metals from flue gas of a coal combustion system. The activated carbon honeycomb can for example removal greater than 90% mercury from flue gas with a simple design and without adding material to the flue gas. Also disclosed herein, and without limitation, are methods for manufacturing the disclosed honeycomb catalyst beds.
摘要翻译：本文公开了但不限于用于从煤燃烧系统的烟道气中除去汞和其它有毒金属的活性炭蜂窝催化剂床。活性炭蜂窝体可以例如以简单的设计从废气中去除大于90％的汞，并且不向废气中添加材料。本文也公开了但不限于制造所公开的蜂窝催化剂床的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式