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    • 7. 发明申请
    • Flexible display substrates
    • 灵活的显示基板
    • US20060240275A1
    • 2006-10-26
    • US11393483
    • 2006-03-29
    • Kishor Gadkaree
    • Kishor Gadkaree
    • B32B15/00
    • H01L21/76254H01L21/76251Y10T428/12674
    • Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films.
    • 用于将半导体材料转移到聚合物基底以提供柔性半导体材料的方法包括将离子注入到半导体衬底中的预定深度,对离子注入的半导体衬底进行一段时间的热处理和有效引起缺陷形成的温度 并且植入的离子缺陷的放大,将离子注入的经热处理的衬底粘合到聚合物衬底上,并从半导体衬底分离诸如单晶硅膜的半导体膜; 以及具有直接或间接设置在聚合物膜上的单晶硅膜的器件。
    • 8. 发明申请
    • Glass-based SOI structures
    • 基于玻璃的SOI结构
    • US20050266658A1
    • 2005-12-01
    • US11177772
    • 2005-07-08
    • James CouillardKishor GadkareeJoseph Mach
    • James CouillardKishor GadkareeJoseph Mach
    • H01L21/20H01L21/30H01L21/46H01L21/762
    • H01L21/76254H01L21/2007
    • Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
    • 提供了包括大面积SOI结构的绝缘体上半导体(SOI)结构,其具有一个或多个由连接到支撑衬底的基本上单晶半导体(例如,掺杂硅)的层(15)组成的区域 20)由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的,并且优选具有小于1000℃的应变点,250℃下的电阻率小于或等于10 16Ω- 并且包含响应于升高的温度(例如,300-1000℃)下的电场而可在玻璃或玻璃陶瓷内移动的正离子(例如碱金属或碱土离子)。 半导体层(15)和支撑衬底(20)之间的结合强度优选为至少8焦耳/米2。 半导体层(15)可以包括混合区域(16),其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底(20)优选地包括具有降低的可移动正离子浓度的耗尽区(23)。