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1. 发明授权

US07170722B2 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer 有权
标题翻译：非常磁阻传感器，通过铁磁多层垂直磁偏置
公开(公告)号：US07170722B2
公开(公告)日：2007-01-30
申请号：US10903173
申请日：2004-07-30
申请人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3932 , G11B5/3993 , G11B2005/0008 , G11B2005/0016
摘要： An extraordinary magnetoresistance (EMR) sensor uses a ferromagnetic multilayer to provide perpendicular magnetic biasing for the sensor. The ferromagnetic multilayer has intrinsic perpendicular magnetic anisotropy and is preferably on top of the EMR active film. The multilayer comprises alternating films of Co, Fe or CoFe and Pt, Pd or PtPd with the preferred multilayer being alternating Co/Pt or Co/Pd films. A diffusion barrier may be located between the EMR active film and the ferromagnetic multilayer.
摘要翻译：非常大的磁阻（EMR）传感器使用铁磁多层来为传感器提供垂直磁偏置。铁磁性多层膜具有固有的垂直磁各向异性，优选在EMR活性膜的顶部。多层包括Co，Fe或CoFe和Pt，Pd或PtPd的交替膜，优选的多层是交替的Co / Pt或Co / Pd膜。扩散阻挡层可以位于EMR活性膜和铁磁性多层之间。

2. 发明申请

US20080088982A1 EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 有权
标题翻译： EMR传感器和晶体管在相同的基板上形成
公开(公告)号：US20080088982A1
公开(公告)日：2008-04-17
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

3. 发明授权

US07199984B2 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling 有权
标题翻译：电流垂直于平面的磁阻传感器，具有通过堆叠内正交磁耦合稳定的自由层
公开(公告)号：US07199984B2
公开(公告)日：2007-04-03
申请号：US10802639
申请日：2004-03-16
申请人： Matthew J. Carey , Jeffrey R. Childress , Bruce A. Gurney , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Bruce A. Gurney , Stefan Maat
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/30 , H01F10/3268 , H01F10/3295
摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is a biasing ferromagnetic layer and the other ferromagnetic layer is the sensor free layer. An antiferromagnetic layer exchange-couples the biasing layer to fix its moment parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers. The electrically-conducting spacer layer, the biasing layer and the antiferromagnetic layer that exchange-couples the biasing layer may all extend beyond the edges of the sensor stack.
摘要翻译：磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。该结构的铁磁层之一是偏置铁磁层，另一个铁磁层是传感器自由层。反铁磁层将偏置层交换耦合以固定其平行于传感器固定层的力矩的力矩。这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。交换耦合偏置层的导电间隔层，偏置层和反铁磁层可以全部延伸超出传感器堆叠的边缘。

4. 发明授权

US07203036B2 Planar extraordinary magnetoresistance sensor 有权
标题翻译：平面非凡磁阻传感器
公开(公告)号：US07203036B2
公开(公告)日：2007-04-10
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39 , G01R33/02 , G01R27/08
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译：非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

5. 发明授权

US07167346B2 Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure 有权
标题翻译：具有反铁磁/铁磁交换耦合结构的垂直磁偏置的非凡磁阻传感器
公开(公告)号：US07167346B2
公开(公告)日：2007-01-23
申请号：US10883204
申请日：2004-06-30
申请人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Bruce A. Gurney , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/39 , G11B5/3993 , G11B2005/0008 , H01L43/08
摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.
摘要翻译：非常大的磁阻（EMR）传感器在EMR活性膜的顶部具有反铁磁/铁磁交换耦合双层结构。双层结构中的铁磁层具有垂直的磁各向异性，并被反铁磁层交换偏置。反铁磁/铁磁双层结构提供垂直于EMR有源膜的平面的磁场，以偏置EMR传感器的磁阻与场响应。铁磁层可以由用于垂直磁记录的任何铁磁材料形成，并且以使其各向异性轴显着超出平面的方式制备。反铁磁层由任何已知的Mn合金形成，例如PtMn，NiMn，FeMn，IrMn，PdMn，PtPdMn和RhMn，或任何绝缘反铁磁材料，例如基于氧化钴和氧化镍反铁磁材料的那些。

6. 发明授权

US08059373B2 EMR sensor and transistor formed on the same substrate 有权
标题翻译： EMR传感器和晶体管形成在同一基板上
公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

7. 发明授权

US06653704B1 Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells 有权
标题翻译：具有隧道结存储单元的磁存储器和用于控制电流到电池的相变材料
公开(公告)号：US06653704B1
公开(公告)日：2003-11-25
申请号：US10254432
申请日：2002-09-24
申请人： Bruce A. Gurney , Stefan Maat
发明人： Bruce A. Gurney , Stefan Maat
IPC分类号： H01L2982
CPC分类号： H01L27/224
摘要： A magnetic random access memory (MRAM) array includes a plurality of magnetic tunnel junction (MTJ) memory cells and a plurality of non-electronic switching elements, each MTJ memory cell and an associated switching element being in electrical series connection and located between the bit and word lines of the array. The switching element is a layer of vanadium dioxide, a material that exhibits a first order phase transition at a transition temperature of approximately 65° C. from a low-temperature monoclinic (semiconducting) to a high-temperature tetragonal (metallic) crystalline structure. This phase transition is accompanied by a change in electrical resistance from high resistance at room temperature to low resistance above the transition temperature. To read a memory cell, the vanadium dioxide switching element associated with that cell is heated to lower the resistance of the switching element to allow sense current to pass through the cell, thereby enabling the memory state of the cell to be read.
摘要翻译：磁性随机存取存储器（MRAM）阵列包括多个磁隧道结（MTJ）存储器单元和多个非电子开关元件，每个MTJ存储单元和相关联的开关元件处于电串联连接并且位于位和数组的字线。开关元件是一层二氧化钒，这是从低温单斜晶（半导体）到高温四方晶（金属）晶体结构在大约65℃的转变温度下呈现一阶相变的材料。该相变伴随着电阻从室温下的高电阻到高于转变温度的低电阻。为了读取存储单元，加热与该单元相关联的二氧化钒开关元件以降低开关元件的电阻，以允许感测电流通过单元，从而使得能够读取单元的存储状态。

8. 发明授权

US08178158B2 Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP) 有权
标题翻译：制造具有限流电路（CCP）的电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法
公开(公告)号：US08178158B2
公开(公告)日：2012-05-15
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： G11B5/00 , G11B5/127 , G11B5/133
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

9. 发明授权

US08154829B2 Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer 有权
标题翻译：隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
公开(公告)号：US08154829B2
公开(公告)日：2012-04-10
申请号：US12553864
申请日：2009-09-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
摘要翻译：隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。铁磁性底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

10. 发明申请

US20120063034A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED INSULATING STRUCTURE 审中-公开
标题翻译：具有改进的绝缘结构的电流 - 平面（CPP）磁传感器（MR）传感器
公开(公告)号：US20120063034A1
公开(公告)日：2012-03-15
申请号：US12880953
申请日：2010-09-13
申请人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
发明人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor, like a CPP MR disk drive read head, has an improved insulating structure surrounding the stack of layers making up the sensor. The sensor has a first silicon nitride layer with a thickness between about 1 and 5 nm on the side edges of the sensor and on regions of the bottom shield layer adjacent the sensor below the sensor's ferromagnetic biasing layer. The sensor has a second silicon nitride layer with a thickness between about 2 and 5 nm on the back edge of the sensor and on the region of the bottom shield layer adjacent the sensor back edge, and a substantially thicker metal oxide layer on the second silicon nitride layer. The insulating structure prevents edge damage at the perimeter of the sensor and thus allows for the fabrication of CPP MR read heads with substantially smaller dimensions.
摘要翻译：电流垂直平面（CPP）磁阻（MR）传感器，如CPP MR磁盘驱动器读头，具有围绕构成传感器的层叠层的改进的绝缘结构。传感器具有在传感器的侧边缘上的厚度在约1和5nm之间的第一氮化硅层以及与传感器的铁磁偏置层下方的传感器相邻的底部屏蔽层的区域。传感器具有在传感器的后边缘上和厚度在约2和5nm之间的第二氮化硅层，并且在与底部屏蔽层相邻的传感器后边缘的区域上，以及在第二硅上的基本上较厚的金属氧化物层氮化物层。绝缘结构防止传感器周边的边缘损坏，从而允许制造具有基本较小尺寸的CPP MR读取头。

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