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1. 发明授权

US08248688B2 Tandem photonic amplifier 有权
标题翻译：串联光子放大器
公开(公告)号：US08248688B2
公开(公告)日：2012-08-21
申请号：US12374989
申请日：2007-07-25
申请人： Brian W. Baird , David M. Hemenway , Xiaoyuan Peng , Wensheng Ren
发明人： Brian W. Baird , David M. Hemenway , Xiaoyuan Peng , Wensheng Ren
IPC分类号： H01S4/00 , H04B10/17
CPC分类号： H01S3/2316 , B23K26/0622 , H01S3/0064 , H01S3/0085 , H01S3/06758 , H01S3/09408 , H01S3/0941 , H01S3/09415 , H01S3/10038 , H01S3/2333
摘要： Embodiments of laser systems advantageously use pulsed optical fiber-based laser source (12) output, the temporal pulse profile of which may be programmed to assume a range of pulse shapes. Pulsed fiber lasers are subject to peak power limits to prevent an onset of undesirable nonlinear effects; therefore, the laser output power of these devices is subsequently amplified in a diode-pumped solid state photonic power amplifier (DPSS-PA) (16). The DPSS PA provides for amplification of the desirable low peak power output of a pulsed fiber master oscillator power amplifier (14) to much higher peak power levels and thereby also effectively increases the available energy per pulse at a specified pulse repetition frequency. The combination of the pulsed fiber master oscillator power amplifier and the diode-pumped solid state power amplifier is referred to as a tandem solid state photonic amplifier (10).
摘要翻译：激光系统的实施例有利地使用基于脉冲光纤的激光源（12）输出，其时间脉冲分布可被编程为呈现一定范围的脉冲形状。脉冲光纤激光器受到峰值功率限制，以防止发生不期望的非线性效应; 因此，这些器件的激光输出功率随后在二极管泵浦固态光子功率放大器（DPSS-PA）（16）中放大。 DPSS PA提供将脉冲光纤主振荡器功率放大器（14）的期望的低峰值功率输出放大到更高的峰值功率电平，从而也可以在指定的脉冲重复频率下有效地增加每个脉冲的可用能量。脉冲光纤主振荡器功率放大器和二极管泵浦固态功率放大器的组合被称为串联固态光子放大器（10）。

2. 发明申请

US20120092755A1 TANDEM PHOTONIC AMPLIFIER 有权
公开(公告)号：US20120092755A1
公开(公告)日：2012-04-19
申请号：US12374989
申请日：2007-07-25
申请人： Brian W. Baird , David M. Hemenway , Xiaoyuan Peng , Wensheng Ren
发明人： Brian W. Baird , David M. Hemenway , Xiaoyuan Peng , Wensheng Ren
IPC分类号： G02F1/365 , B23K26/00 , H01S3/091 , H01S3/10 , H01S3/067
CPC分类号： H01S3/2316 , B23K26/0622 , H01S3/0064 , H01S3/0085 , H01S3/06758 , H01S3/09408 , H01S3/0941 , H01S3/09415 , H01S3/10038 , H01S3/2333
摘要： Embodiments of laser systems advantageously use pulsed optical fiber-based laser source (12) output, the temporal pulse profile of which may be programmed to assume a range of pulse shapes. Pulsed fiber lasers are subject to peak power limits to prevent an onset of undesirable nonlinear effects; therefore, the laser output power of these devices is subsequently amplified in a diode-pumped solid state photonic power amplifier (DPSS-PA) (16). The DPSS PA provides for amplification of the desirable low peak power output of a pulsed fiber master oscillator power amplifier (14) to much higher peak power levels and thereby also effectively increases the available energy per pulse at a specified pulse repetition frequency. The combination of the pulsed fiber master oscillator power amplifier and the diode-pumped solid state power amplifier is referred to as a tandem solid state photonic amplifier (10).
摘要翻译：激光系统的实施例有利地使用基于脉冲光纤的激光源（12）输出，其时间脉冲分布可被编程为呈现一定范围的脉冲形状。脉冲光纤激光器受到峰值功率限制，以防止发生不期望的非线性效应; 因此，这些器件的激光输出功率随后在二极管泵浦固态光子功率放大器（DPSS-PA）（16）中放大。 DPSS PA提供将脉冲光纤主振荡器功率放大器（14）的期望的低峰值功率输出放大到更高的峰值功率电平，从而也可以在指定的脉冲重复频率下有效地增加每个脉冲的可用能量。脉冲光纤主振荡器功率放大器和二极管泵浦固态功率放大器的组合被称为串联固态光子放大器（10）。

3. 发明申请

US20090245301A1 LASER MICROMACHINING USING PROGRAMMABLE PULSE SHAPES 有权
标题翻译：使用可编程脉冲形状的激光微型计算机
公开(公告)号：US20090245301A1
公开(公告)日：2009-10-01
申请号：US12057264
申请日：2008-03-27
申请人： Xiaoyuan Peng , Brian W. Baird , William J. Jordens , David Martin Hemenway
发明人： Xiaoyuan Peng , Brian W. Baird , William J. Jordens , David Martin Hemenway
IPC分类号： H01S3/10 , H01S3/00
CPC分类号： H01S3/0057 , B23K26/0622 , G02F1/0327
摘要： Laser pulse shaping techniques produce tailored laser pulse spectral output. The laser pulses can be programmed to have desired pulse widths and pulse shapes (such as sub-nanosecond to 10 ns-20 ns pulse widths with 1 ns to several nanoseconds leading edge rise times). Preferred embodiments are implemented with one or more electro-optical modulators receiving drive signals that selectively change the amount of incident pulsed laser emission to form a tailored pulse output. Triggering the drive signal from the pulsed laser emission suppresses jitter associated with other stages of the link processing system and substantially removes jitter associated with pulsed laser emission build-up time.
摘要翻译：激光脉冲整形技术产生定制的激光脉冲光谱输出。激光脉冲可以被编程为具有期望的脉冲宽度和脉冲形状（例如，亚纳秒到10ns-20ns脉冲宽度，1ns至几纳秒前沿上升时间）。优选实施例是用一个或多个电光调制器来实现的，该电光调制器接收有选择地改变入射脉冲激光发射量的驱动信号以形成定制的脉冲输出。从脉冲激光发射器触发驱动信号抑制与链路处理系统的其他级相关联的抖动，并且基本上消除与脉冲激光发射建立时间相关联的抖动。

4. 发明授权

US07817686B2 Laser micromachining using programmable pulse shapes 有权
标题翻译：激光微加工采用可编程脉冲形状
公开(公告)号：US07817686B2
公开(公告)日：2010-10-19
申请号：US12057264
申请日：2008-03-27
申请人： Xiaoyuan Peng , Brian W. Baird , William J. Jordens , David Martin Hemenway
发明人： Xiaoyuan Peng , Brian W. Baird , William J. Jordens , David Martin Hemenway
IPC分类号： H01S3/098
CPC分类号： H01S3/0057 , B23K26/0622 , G02F1/0327
摘要： Laser pulse shaping techniques produce tailored laser pulse spectral output. The laser pulses can be programmed to have desired pulse widths and pulse shapes (such as sub-nanosecond to 10 ns-20 ns pulse widths with 1 ns to several nanoseconds leading edge rise times). Preferred embodiments are implemented with one or more electro-optical modulators receiving drive signals that selectively change the amount of incident pulsed laser emission to form a tailored pulse output. Triggering the drive signal from the pulsed laser emission suppresses jitter associated with other stages of the link processing system and substantially removes jitter associated with pulsed laser emission build-up time.
摘要翻译：激光脉冲整形技术产生定制的激光脉冲光谱输出。激光脉冲可以被编程为具有期望的脉冲宽度和脉冲形状（例如，亚纳秒到10ns-20ns脉冲宽度，1ns至几纳秒前沿上升时间）。优选实施例是用一个或多个电光调制器来实现的，该电光调制器接收有选择地改变入射脉冲激光发射量的驱动信号以形成定制的脉冲输出。从脉冲激光发射器触发驱动信号抑制与链路处理系统的其他级相关联的抖动，并且基本上消除与脉冲激光发射建立时间相关联的抖动。

5. 再颁专利

USRE43605E1 Laser segmented cutting, multi-step cutting, or both 有权
标题翻译：激光分段切割，多步切割或两者兼容
公开(公告)号：USRE43605E1
公开(公告)日：2012-08-28
申请号：US12351562
申请日：2009-01-09
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要翻译：通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。该技术可用于切割具有各种不同激光和波长的各种材料。多步骤过程可以优化每个单独层的激光工艺。

6. 再颁专利

USRE43400E1 Laser segmented cutting, multi-step cutting, or both 有权
公开(公告)号：USRE43400E1
公开(公告)日：2012-05-22
申请号：US11332815
申请日：2006-01-13
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

7. 发明授权

US07687740B2 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US07687740B2
公开(公告)日：2010-03-30
申请号：US11051262
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

8. 发明申请

US20080121627A1 Methods and systems for semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点进行半导体结构处理的方法和系统
公开(公告)号：US20080121627A1
公开(公告)日：2008-05-29
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
IPC分类号： B23K26/38 , B23K26/03
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。

9. 发明授权

US07157038B2 Ultraviolet laser ablative patterning of microstructures in semiconductors 有权
标题翻译：半导体微结构的紫外激光烧蚀图案化
公开(公告)号：US07157038B2
公开(公告)日：2007-01-02
申请号：US10017497
申请日：2001-12-14
申请人： Brian W. Baird , Michael J. Wolfe , Richard S. Harris , Kevin P. Fahey , Lian-Cheng Zou , Thomas R. McNeil
发明人： Brian W. Baird , Michael J. Wolfe , Richard S. Harris , Kevin P. Fahey , Lian-Cheng Zou , Thomas R. McNeil
IPC分类号： B23K26/38
CPC分类号： B23K26/0622 , B23K26/066 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
摘要翻译：特征尺寸小于50微米的图案使用紫外激光烧蚀直接在半导体，特别是硅，GaAs，磷化铟或单晶蓝宝石中形成。这些图案包括用于集成电路连接的非常高的纵横比圆柱形通孔开口; 包含在半导体晶片上的加工芯片的分割; 和微型切割以从母半导体晶片分离微电路工件。来自二极管泵浦Q开关频率三倍的Nd：YAG，Nd：YVO 4或Nd：YLF的激光输出脉冲（32）以高速精度被引导到工件（12）使用复合光束定位器。光学系统产生约10微米的高斯光点尺寸或顶帽光束轮廓。用于使用这种聚焦光点尺寸的半导体高速烧蚀处理的脉冲能量大于5kHz，优选高于15kHz的脉冲重复频率时，每脉冲大于200μJ。在全宽度半最大点处测量的激光脉冲宽度优选小于80ns。

10. 发明申请

US20130244449A1 Methods and Apparatus For Patterning Photovoltaic Devices and Materials For Use With Such Devices 有权
标题翻译：用于图案化的光伏器件和材料用于这种器件的方法和装置
公开(公告)号：US20130244449A1
公开(公告)日：2013-09-19
申请号：US13820997
申请日：2011-09-06
申请人： Brian W. Baird , Timothy D. Gerke
发明人： Brian W. Baird , Timothy D. Gerke
IPC分类号： H01L31/18 , H01L21/78
CPC分类号： H01L31/0236 , B23K26/0624 , B23K26/0732 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/268 , H01L21/78 , H01L31/046 , H01L31/0463 , H01L31/073 , H01L31/0749 , H01L31/18 , Y02E10/543
摘要： A picosecond laser beam shaping assembly is disclosed for shaping a picosecond laser beam for use in patterning (e.g., scribing) semiconductor devices. The assembly comprises a pulsed fibre laser source of picosecond laser pulses, a harmonic conversion element for converting laser pulses at a first laser wavelength having a first spectral bandwidth to laser pulses at a second laser wavelength having a second spectral bandwidth, and a beam shaping apparatus for shaping the laser beam at the second laser wavelength, the beam shaping apparatus having a spectral bandwidth that substantially corresponds to the second spectral bandwidth so as to produce a laser beam having a substantially rectangular cross-sectional profile.
摘要翻译：公开了一种皮秒激光束成形组件，用于成形用于图案化（例如划线）半导体器件的皮秒激光束。组件包括皮秒激光脉冲的脉冲光纤激光源，用于将具有第一光谱带宽的第一激光波长的激光脉冲转换成具有第二光谱带宽的第二激光波长的激光脉冲的谐波转换元件，以及光束成形设备为了在第二激光波长处成形激光束，光束成形装置具有基本对应于第二光谱带宽的光谱带宽，以便产生具有基本上矩形横截面轮廓的激光束。

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