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    • 4. 发明申请
    • FORMING A TRENCH TO DEFINE ONE OR MORE ISOLATION REGIONS IN A SEMICONDUCTOR STRUCTURE
    • 形成一个半导体结构中定义一个或多个隔离区域的TRENCH
    • US20050101101A1
    • 2005-05-12
    • US10703387
    • 2003-11-06
    • Juanita DeLoachFreidoon MehradBrian TrentmanTroy Yocum
    • Juanita DeLoachFreidoon MehradBrian TrentmanTroy Yocum
    • H01L21/762H01L21/76
    • H01L21/76232
    • In one embodiment, a method for forming a semiconductor structure in manufacturing a semiconductor device includes providing a pad layer on a surface of a substrate, providing a nitride layer on the pad layer, and providing a sacrificial oxide layer on the nitride layer. In a first etching step, at least the sacrificial oxide and nitride layers are etched to define opposing substantially vertical surfaces of at least the sacrificial oxide and nitride layers. In a second etching step, the nitride layer is etched such that the opposing substantially vertical surfaces of the nitride layer are recessed from the opposing substantially vertical surfaces of the sacrificial oxide layer, the sacrificial oxide layer substantially preventing the nitride layer from decreasing in thickness as a result of the etching of the nitride layer. In a third etching step, the substrate is etched to form a trench extending into the substrate for purposes of defining one or more isolation regions adjacent the trench.
    • 在一个实施例中,在制造半导体器件中形成半导体结构的方法包括在衬底的表面上提供焊盘层,在焊盘层上提供氮化物层,并在氮化物层上提供牺牲氧化物层。 在第一蚀刻步骤中,至少牺牲氧化物层和氮化物层被蚀刻以限定至少牺牲氧化物层和氮化物层的相对的基本垂直的表面。 在第二蚀刻步骤中,蚀刻氮化物层,使得氮化物层的相对的基本上垂直的表面从牺牲氧化物层的相对的基本上垂直的表面凹陷,牺牲氧化物层基本上防止氮化物层的厚度减小 蚀刻氮化物层的结果。 在第三蚀刻步骤中,蚀刻衬底以形成延伸到衬底中的沟槽,用于限定与沟槽相邻的一个或多个隔离区域。