专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100078055A1 NANOSTRUCTURE AND PHOTOVOLTAIC CELL IMPLEMENTING SAME 有权
标题翻译：纳米结构和光电池实现
公开(公告)号：US20100078055A1
公开(公告)日：2010-04-01
申请号：US11466411
申请日：2006-08-22
申请人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/042 , H01L31/00 , H01L21/20 , H01L31/18 , H01L31/0248
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at least two sides of the nanocable, and a photovoltaically active p-n junction formed between the nanocable and the second electrode. A photovoltaic array according to one embodiment includes a plurality of photovoltaic nanostructures as recited above. Methods for forming nanostructures are also presented.
摘要翻译：根据本发明的一个实施方案的光伏纳米结构包括耦合到第一电极的导电纳米结构，沿着纳米线的至少两侧延伸的第二电极以及形成在纳米交联和第二电极之间的光伏活性p-n结。根据一个实施方案的光伏阵列包括如上所述的多个光伏纳米结构。还提出了形成纳米结构的方法。

2. 发明授权

US08895350B2 Methods for forming nanostructures and photovoltaic cells implementing same 有权
标题翻译：形成纳米结构和实现相同的光伏电池的方法
公开(公告)号：US08895350B2
公开(公告)日：2014-11-25
申请号：US12508815
申请日：2009-07-24
申请人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/0352 , H01L31/052 , B82Y40/00 , B82Y10/00 , H01L31/068 , B82Y30/00 , H01L31/0216
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A method for forming a nanostructure according to one embodiment includes creating a hole in an insulating layer positioned over an electrically conductive layer; and forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocable being in communication with the electrically conductive layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施方案的形成纳米结构的方法包括在位于导电层上的绝缘层中形成孔; 并且在所述孔中形成纳米结构，使得所述纳米交联体延伸穿过所述绝缘层中的所述孔并从其突出，所述纳米交联体与所述导电层连通。还介绍了其他系统和方法。

3. 发明申请

US20110036395A1 METHODS FOR FORMING NANOSTRUCTURES AND PHOTOVOLTAIC CELLS IMPLEMENTING SAME 有权
标题翻译：形成纳米结构的方法和实施相同的光电池
公开(公告)号：US20110036395A1
公开(公告)日：2011-02-17
申请号：US12911657
申请日：2010-10-25
申请人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/0236 , C23C28/00 , C23C14/34 , B32B3/00 , H01L31/04 , C30B25/00 , C30B11/00 , C25F3/00 , C23F1/00
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that the template forms an insulating layer between the nanocables; and forming at least one layer over the nanocables. A nanostructure according to one embodiment includes a nanocable having a roughened outer surface and a solid core. A nanostructure according to one embodiment includes an array of nanocables each having a roughened outer surface and a solid core, the roughened outer surface including reflective cavities; and at least one layer formed over the roughened outer surfaces of the nanocables, the at least one layer creating a photovoltaically active p-n junction. Additional systems and methods are also presented.
摘要翻译：根据一个实施方案的用于形成纳米结构的方法包括在用于形成纳米线阵列的模板中沉积材料; 仅去除模板的一部分，使得模板在纳米覆盖物之间形成绝缘层; 以及在所述纳米覆盖物上形成至少一个层。根据一个实施方案的纳米结构包括具有粗糙化的外表面和固体核的纳米结构。根据一个实施例的纳米结构包括每个具有粗糙化的外表面和实心芯的纳米线阵列，粗糙化的外表面包括反射腔; 以及至少一个层，形成在所述纳米覆盖物的粗糙化的外表面上，所述至少一个层产生光伏活性p-n结。还介绍了其他系统和方法。

4. 发明授权

US08906733B2 Methods for forming nanostructures and photovoltaic cells implementing same 有权
标题翻译：形成纳米结构和实现相同的光伏电池的方法
公开(公告)号：US08906733B2
公开(公告)日：2014-12-09
申请号：US12911657
申请日：2010-10-25
申请人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/0236 , C30B25/00 , C23C28/00 , C23C14/34 , H01L31/0216 , B82Y40/00 , B82Y30/00 , H01L31/052 , H01L31/0352 , B82Y10/00 , H01L31/18 , H01L31/068
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that the template forms an insulating layer between the nanocables; and forming at least one layer over the nanocables. A nanostructure according to one embodiment includes a nanocable having a roughened outer surface and a solid core. A nanostructure according to one embodiment includes an array of nanocables each having a roughened outer surface and a solid core, the roughened outer surface including reflective cavities; and at least one layer formed over the roughened outer surfaces of the nanocables, the at least one layer creating a photovoltaically active p-n junction. Additional systems and methods are also presented.
摘要翻译：根据一个实施方案的用于形成纳米结构的方法包括在用于形成纳米线阵列的模板中沉积材料; 仅去除模板的一部分，使得模板在纳米覆盖物之间形成绝缘层; 以及在所述纳米覆盖物上形成至少一个层。根据一个实施方案的纳米结构包括具有粗糙化的外表面和固体核的纳米结构。根据一个实施例的纳米结构包括每个具有粗糙化的外表面和实心芯的纳米线阵列，粗糙化的外表面包括反射腔; 以及至少一个层，形成在所述纳米覆盖物的粗糙化的外表面上，所述至少一个层产生光伏活性p-n结。还介绍了其他系统和方法。

5. 发明授权

US07847180B2 Nanostructure and photovoltaic cell implementing same 有权
标题翻译：纳米结构和光伏电池实现相同
公开(公告)号：US07847180B2
公开(公告)日：2010-12-07
申请号：US11466411
申请日：2006-08-22
申请人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Brian Argo , Ruxandra Vidu , Pieter Stroeve , John Argo , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/042 , H01L31/00 , H01L21/20 , H01L31/18 , H01L31/0248
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at least two sides of the nanocable, and a photovoltaically active p-n junction formed between the nanocable and the second electrode. A photovoltaic array according to one embodiment includes a plurality of photovoltaic nanostructures as recited above. Methods for forming nanostructures are also presented.
摘要翻译：根据本发明的一个实施方案的光伏纳米结构包括耦合到第一电极的导电纳米结构，沿着纳米线的至少两侧延伸的第二电极以及形成在纳米交联和第二电极之间的光伏活性p-n结。根据一个实施方案的光伏阵列包括如上所述的多个光伏纳米结构。还提出了形成纳米结构的方法。

6. 发明申请

US20100112748A1 METHODS FOR FORMING NANOSTRUCTURES AND PHOTOVOLTAIC CELLS IMPLEMENTING SAME 有权
标题翻译：形成纳米结构的方法和实施相同的光电池
公开(公告)号：US20100112748A1
公开(公告)日：2010-05-06
申请号：US12508815
申请日：2009-07-24
申请人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
发明人： Ruxandra Vidu , Brian Argo , John Argo , Pieter Stroeve , Saif Islam , Jie-Ren Ku , Michael Chen
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/0352
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/02167 , H01L31/022425 , H01L31/0352 , H01L31/035272 , H01L31/043 , H01L31/052 , H01L31/0525 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547 , Y10S977/762 , Y10S977/891 , Y10S977/948 , Y10T428/12993 , Y10T428/2978
摘要： A method for forming a nanostructure according to one embodiment includes creating a hole in an insulating layer positioned over an electrically conductive layer; and forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocable being in communication with the electrically conductive layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施方案的形成纳米结构的方法包括在位于导电层上的绝缘层中形成孔; 并且在所述孔中形成纳米结构，使得所述纳米交联体延伸穿过所述绝缘层中的所述孔并从其突出，所述纳米交联体与所述导电层连通。还介绍了其他系统和方法。

7. 发明申请

US20050111079A1 Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof 失效
标题翻译：使用激光腔能量放大信号的半导体光放大器及其制造方法
公开(公告)号：US20050111079A1
公开(公告)日：2005-05-26
申请号：US11024319
申请日：2004-12-27
申请人： Shih-Yuan Wang , Miao Zhu , Zuhua Zhu , Haiqing Wei , Saif Islam
发明人： Shih-Yuan Wang , Miao Zhu , Zuhua Zhu , Haiqing Wei , Saif Islam
IPC分类号： H01S5/34 , H01S5/50 , H01S3/00
CPC分类号： B82Y20/00 , H01S5/3413 , H01S5/50 , H01S5/5027 , H01S5/5063 , H01S5/5072 , H01S2301/02
摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.
摘要翻译：描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式