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1. 发明授权

US07385266B2 Sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：传感器平台使用非水平取向的纳米管元件
公开(公告)号：US07385266B2
公开(公告)日：2008-06-10
申请号：US10844883
申请日：2004-05-12
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/66
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

2. 发明授权

US07780918B2 Sensor platform using a horizontally oriented nanotube element 有权
标题翻译：传感器平台采用水平取向的纳米管元件
公开(公告)号：US07780918B2
公开(公告)日：2010-08-24
申请号：US10844913
申请日：2004-05-12
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G01N27/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.
摘要翻译：描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。在某些实施方案中，传感器元件对分析物具有亲和力。在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。在某些实施例中，大规模阵列包括多个传感器。

3. 发明申请

US20080164541A1 Sensor platform using a non-horizontally oriented nanotube element 有权
公开(公告)号：US20080164541A1
公开(公告)日：2008-07-10
申请号：US11827393
申请日：2007-07-11
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

4. 发明授权

US07113426B2 Non-volatile RAM cell and array using nanotube switch position for information state 有权
标题翻译：非易失性RAM单元和阵列使用纳米管开关位置进行信息状态
公开(公告)号：US07113426B2
公开(公告)日：2006-09-26
申请号：US10810963
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G11C11/34 , G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025
摘要： Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, second and third nodes. The first and second nodes are in respective electrical communication with the bit line and the word line. Each cell further includes an electromechanically deflectable switch, having a first, second and third node. The first node is in electrical communication with the release line, and a third node is in electrical communication with the third node of the cell selection transistor. The electromechanically deflectable switch includes a nanotube switching element physically positioned between the first and third nodes of the switch and in electrical communication with the second node of the switch. The second node of the switch is in communication with a reference signal. Each nanotube switching element is deflectable into contact with the third node of the switch in response to signals at the first and second node of the cell selection transistor and is releasable from such contact in response to a signal at the release line. In preferred embodiments, the cell selection transistor is a FET and the second node of the transistor is a gate of the FET.
摘要翻译：非易失性RAM单元和阵列使用纳米管切换位置信息状态。非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括具有第一，第二和第三节点的单元选择晶体管。第一和第二节点与位线和字线分别电气通信。每个单元还包括具有第一，第二和第三节点的机电偏转开关。第一节点与释放线电连通，第三节点与小区选择晶体管的第三节点电通信。机电可偏转开关包括物理地位于开关的第一和第三节点之间并与开关的第二节点电通信的纳米管开关元件。交换机的第二个节点与参考信号通信。每个纳米管开关元件响应于电池选择晶体管的第一和第二节点处的信号而偏转成与开关的第三节点接触，并且响应于释放线处的信号而可从该接触件释放。在优选实施例中，电池选择晶体管是FET，晶体管的第二节点是FET的栅极。

5. 发明申请

US20050065741A1 Sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：传感器平台使用非水平取向的纳米管元件
公开(公告)号：US20050065741A1
公开(公告)日：2005-03-24
申请号：US10844883
申请日：2004-05-12
申请人： Brent Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Brent Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： B81B3/00 , G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , G01N33/487 , G01R15/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

6. 发明申请

US20050041465A1 Nram bit selectable two-device nanotube array 失效
标题翻译： Nram位可选择双器件纳米管阵列
公开(公告)号：US20050041465A1
公开(公告)日：2005-02-24
申请号：US10810962
申请日：2004-03-26
申请人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , G11C11/34
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , Y10S977/943
摘要： A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor and a restore transistor with first, second and third nodes. Each cell further includes an electromechanically deflectable switch, the position of which manifests the logical state of the cell. Each cell is bit selectable for read and write operations.
摘要翻译：非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括单元选择晶体管和具有第一，第二和第三节点的恢复晶体管。每个单元还包括机电偏转开关，其位置表示单元的逻辑状态。每个单元都可以进行读和写操作。

7. 发明申请

US20070296019A1 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
公开(公告)号：US20070296019A1
公开(公告)日：2007-12-27
申请号：US11731946
申请日：2007-04-02
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
IPC分类号： H01L29/788
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

8. 发明申请

US20060125033A1 Sensor platform using a non-horizontally oriented nanotube element 有权
公开(公告)号：US20060125033A1
公开(公告)日：2006-06-15
申请号：US11333623
申请日：2006-01-17
申请人： Brent Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
发明人： Brent Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： H01L29/84
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

9. 发明申请

US20070121364A1 One-time programmable, non-volatile field effect devices and methods of making same 失效
标题翻译：一次性可编程，非易失性场效应器件及其制作方法
公开(公告)号：US20070121364A1
公开(公告)日：2007-05-31
申请号：US11651177
申请日：2007-01-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
IPC分类号： H01L29/76 , H01L29/745 , G11C11/00 , G11C13/00 , H01L29/84
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
摘要翻译：一次性可编程，非易失性场效应器件及其制作方法。在一个实施例中，一次性可编程的非易失性场效应器件包括源极，漏极和栅极，源极和漏极之间具有场可调整通道。源极，漏极和栅极中的每一个具有相应的端子。电机械可偏转的纳米管开关元件电耦合到源极，漏极和栅极中的一个，并且具有可机电偏转的纳米管元件，其被定位成响应于电刺激而可偏转以在第二电极之间形成非易失性闭合电状态源，漏，门之一及其相应的终端。

10. 发明申请

US20070108482A1 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US20070108482A1
公开(公告)日：2007-05-17
申请号：US11541834
申请日：2006-10-02
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Bernhard Vogeli , Darren Brock , Venkatachalam Jaiprakash
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

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