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1. 发明申请

US20120018693A1 CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：限制电阻可变存储器单元结构和方法
公开(公告)号：US20120018693A1
公开(公告)日：2012-01-26
申请号：US12843695
申请日：2010-07-26
申请人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
发明人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.
摘要翻译：本文描述了限制性电阻变量存储单元结构和方法。形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，该方法包括：向处理室提供锗酰脒前体和第一反应物在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。

2. 发明申请

US20120149146A1 CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS 审中-公开
公开(公告)号：US20120149146A1
公开(公告)日：2012-06-14
申请号：US13403443
申请日：2012-02-23
申请人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
发明人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.

3. 发明授权

US08124445B2 Confined resistance variable memory cell structures and methods 有权
标题翻译：密闭电阻变量记忆单元结构和方法
公开(公告)号：US08124445B2
公开(公告)日：2012-02-28
申请号：US12843695
申请日：2010-07-26
申请人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
发明人： Brenda D. Kraus , Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L21/00
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.
摘要翻译：本文描述了限制性电阻变量存储单元结构和方法。形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，通过执行包括向处理室提供锗酰脒前体和第一反应物的方法在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。

4. 发明授权

US09006075B2 Memory cells, semiconductor devices including such cells, and methods of fabrication 有权
标题翻译：存储单元，包括这种单元的半导体器件，以及制造方法
公开(公告)号：US09006075B2
公开(公告)日：2015-04-14
申请号：US13298987
申请日：2011-11-17
申请人： Timothy A. Quick , Eugene P. Marsh , Stefan Uhlenbrock , Chet E. Carter , Scott E. Sills
发明人： Timothy A. Quick , Eugene P. Marsh , Stefan Uhlenbrock , Chet E. Carter , Scott E. Sills
IPC分类号： H01L21/22 , H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1616
摘要： Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
摘要翻译：公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。细胞材料和离子源材料之间包含不连续的界面材料。还公开了包括所公开的存储单元的制造方法和半导体器件。

5. 发明申请

US20140027775A1 METHODS OF FORMING A METAL CHALCOGENIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND A RELATED SEMICONDUCTOR DEVICE STRUCTURE 有权
标题翻译：形成金属氯化铝材料的方法，形成半导体器件结构的相关方法以及相关的半导体器件结构
公开(公告)号：US20140027775A1
公开(公告)日：2014-01-30
申请号：US13556751
申请日：2012-07-24
申请人： Timothy A. Quick , Stefan Uhlenbrock , Eugene P. Marsh
发明人： Timothy A. Quick , Stefan Uhlenbrock , Eugene P. Marsh
IPC分类号： H01L31/18 , H01L31/0272
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/45525 , H01L21/0237 , H01L21/0256 , H01L21/02562 , H01L21/02614 , H01L21/0262 , H01L31/0324
摘要： Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
摘要翻译：因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

6. 发明申请

US20100267220A1 Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry 有权
标题翻译：将含锑相变材料沉积到基板上的方法和形成相变存储器电路的方法
公开(公告)号：US20100267220A1
公开(公告)日：2010-10-21
申请号：US12424387
申请日：2009-04-15
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L21/20 , B05D5/12
CPC分类号： H01L45/1616 , C23C14/30 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/148
摘要： A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
摘要翻译：将包含锑的相变材料沉积到衬底上的方法包括向衬底提供还原剂和蒸发的Sb（OR）3，其中R是烷基，并且在衬底上形成来自含锑相变材料的衬底。相变材料的氧含量不大于10原子％，除了锑之外，还包含另外的金属。

7. 发明授权

US08367460B2 Horizontally oriented and vertically stacked memory cells 有权
公开(公告)号：US08367460B2
公开(公告)日：2013-02-05
申请号：US12820923
申请日：2010-06-22
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L29/02
CPC分类号： H01L27/2481 , H01L27/2463 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

8. 发明申请

US20120231579A1 Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry 有权
标题翻译：将含锑相变材料沉积到基板上的方法和形成相变存储器电路的方法
公开(公告)号：US20120231579A1
公开(公告)日：2012-09-13
申请号：US13478460
申请日：2012-05-23
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C23C14/30 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/148
摘要： A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
摘要翻译：将包含锑的相变材料沉积到衬底上的方法包括向衬底提供还原剂和蒸发的Sb（OR）3，其中R是烷基，并且在衬底上形成来自含锑相变材料的衬底。相变材料的氧含量不大于10原子％，除了锑之外，还包含另外的金属。

9. 发明申请

US20120097911A1 PHASE CHANGE MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：相变存储器单元结构和方法
公开(公告)号：US20120097911A1
公开(公告)日：2012-04-26
申请号：US13342172
申请日：2012-01-02
申请人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
发明人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
IPC分类号： H01L47/00 , H01L29/02
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144
摘要： Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.
摘要翻译：本文描述了相变存储器单元结构和方法。形成相变存储单元结构的多种方法包括在第一电极上形成电介质堆叠结构，其中形成电介质叠层结构包括在电介质叠层结构的第一区和第三区之间形成第二区，第二区域，其热导率不同于第一区域的热导率，并且不同于介电叠层的第三区域的热导率。一个或多个实施例包括通过介电堆叠结构的第一，第二和第三区域形成通孔，在通孔中沉积相变材料，以及在相变材料上形成第二电极。

10. 发明授权

US08097537B2 Phase change memory cell structures and methods 有权
标题翻译：相变存储单元结构和方法
公开(公告)号：US08097537B2
公开(公告)日：2012-01-17
申请号：US12787070
申请日：2010-05-25
申请人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
发明人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
IPC分类号： H01L21/44
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144
摘要： Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.
摘要翻译：本文描述了相变存储器单元结构和方法。形成相变存储单元结构的多种方法包括在第一电极上形成电介质堆叠结构，其中形成电介质叠层结构包括在电介质叠层结构的第一区和第三区之间形成第二区，第二区域，其热导率不同于第一区域的热导率，并且不同于介电叠层的第三区域的热导率。一个或多个实施例包括通过介电堆叠结构的第一，第二和第三区域形成通孔，在通孔中沉积相变材料，以及在相变材料上形成第二电极。

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