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1. 发明申请

US20050170408A1 G protein-binding proteins and polynucleotides encoding the same 审中-公开
标题翻译： G蛋白结合蛋白和编码其的多核苷酸
公开(公告)号：US20050170408A1
公开(公告)日：2005-08-04
申请号：US11050758
申请日：2005-02-07
申请人： Bradley Ozenberger , Eileen Kajkowski , Ching-Hsiung Lo , Heidi Sofia
发明人： Bradley Ozenberger , Eileen Kajkowski , Ching-Hsiung Lo , Heidi Sofia
IPC分类号： G01N33/50 , A61K45/00 , A61P43/00 , C07K14/47 , C07K14/705 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N15/09 , C12N15/12 , C12Q1/02 , C12Q1/68 , G01N33/15 , G01N33/53 , G01N33/566 , C07H21/04 , C07K16/28
CPC分类号： C07K14/4711 , C07K14/47
摘要： Novel proteins which contain a structural module conserved in the G protein coupled receptor superfamily, polynucleotides which encode these proteins, and methods for producing these proteins are provided. Diagnostic, therapeutic, and screening methods employing the polynucleotides and polypeptides of the present invention are also provided.
摘要翻译：提供了含有在G蛋白偶联受体超家族中保守的结构模块的新型蛋白质，编码这些蛋白质的多核苷酸，以及用于制备这些蛋白质的方法。还提供了使用本发明的多核苷酸和多肽的诊断，治疗和筛选方法。

2. 发明申请

US20070113296A1 Novel brain-localized protein kinases homologous to homeodomain-interacting protein kinases 失效
标题翻译：新的脑定位蛋白激酶与同源结构域相互作用的蛋白激酶同源
公开(公告)号：US20070113296A1
公开(公告)日：2007-05-17
申请号：US11645056
申请日：2006-12-26
申请人： Wei Liu , Bradley Ozenberger , Leeying Wu , Ching-Hsiung Lo , Steven Haney , Hemchand Sookdeo , Jee Hyung Lee
发明人： Wei Liu , Bradley Ozenberger , Leeying Wu , Ching-Hsiung Lo , Steven Haney , Hemchand Sookdeo , Jee Hyung Lee
IPC分类号： A01K67/027 , C12Q1/68 , G01N33/567 , C07H21/04 , C12P21/06 , C12N9/12
CPC分类号： C12N9/1205
摘要： The invention provides isolated protein kinase polypeptides related to novel brain-localized protein kinases homologous to known homeodomain-interacting protein kinases (HIPKs), and the isolated nucleic acid molecules that encode these polypeptides. The novel polypeptides and nucleic acid molecules of the invention are termed HIPK4. The invention also provides genetically engineered expression vectors, host cells, and transgenic animals comprising the novel nucleic acid molecules of the invention. The invention additionally provides antisense and RNAi molecules to the nucleic acid molecules of the invention. The invention further provides inhibitors, activators, and antibodies capable of binding to the protein kinase polypeptides of the invention, and their use in the prevention and treatment of neurological disorders.
摘要翻译：本发明提供与与已知同源结构域相互作用的蛋白激酶（HIPK）同源的新型脑定位蛋白激酶相关的分离的蛋白激酶多肽以及编码这些多肽的分离的核酸分子。本发明的新型多肽和核酸分子称为HIPK4。本发明还提供了遗传工程改造的表达载体，宿主细胞和包含本发明的新型核酸分子的转基因动物。本发明还向本发明的核酸分子提供反义和RNAi分子。本发明还提供能够结合本发明的蛋白激酶多肽的抑制剂，活化剂和抗体及其在预防和治疗神经障碍中的用途。

3. 发明授权

US08809905B2 Vertical BJT and SCR for ESD 有权
标题翻译：垂直BJT和SCR用于ESD
公开(公告)号：US08809905B2
公开(公告)日：2014-08-19
申请号：US13339189
申请日：2011-12-28
申请人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
发明人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
IPC分类号： H01L29/66
CPC分类号： H01L27/0262 , H01L29/732 , H01L29/74
摘要： An electrostatic discharge (ESD) protection device includes a well region formed from semiconductor material with a first doping type and a floating base formed from semiconductor material with a second doping type. The floating base is disposed vertically above the well region. The ESD also includes a first terminal receiving region formed from semiconductor material with a third doping type. The first terminal receiving region is disposed vertically above the floating base. The ESD further includes a second terminal receiving region. The second terminal receiving region is laterally spaced apart from the first terminal receiving region by silicon trench isolation (STI) region. In some embodiments, the second terminal receiving region is formed from semiconductor material with the third doping type to form a bipolar junction transmitter (BJT) or with a fourth doping type to form a silicon controlled rectifier (SCR).
摘要翻译：静电放电（ESD）保护装置包括由具有第一掺杂类型的半导体材料和由具有第二掺杂类型的半导体材料形成的浮动基底形成的阱区。浮动底座垂直设置在井区域上方。 ESD还包括由具有第三掺杂类型的半导体材料形成的第一端子接收区域。第一端子接收区域垂直设置在浮动基座上方。 ESD还包括第二终端接收区域。第二端子接收区域通过硅沟槽隔离（STI）区域与第一端子接收区域横向间隔开。在一些实施例中，第二端子接收区域由具有第三掺杂类型的半导体材料形成以形成双极结发送器（BJT）或具有第四掺杂类型以形成可控硅整流器（SCR）。

4. 发明授权

US08735993B2 FinFET body contact and method of making same 有权
标题翻译： FinFET体接触及其制作方法
公开(公告)号：US08735993B2
公开(公告)日：2014-05-27
申请号：US13363026
申请日：2012-01-31
申请人： Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
发明人： Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
IPC分类号： H01L27/088
CPC分类号： H01L29/7831 , H01L27/0255 , H01L29/423 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
摘要翻译：半导体器件可以包括用于ESD保护的finFET器件上的体接触。半导体器件包括半导体鳍片，源极/漏极区域和主体接触。源极/漏极区域和主体接触处于半导体鳍片中。翅片的一部分横向在源极/漏极区域和身体接触之间。半导体鳍片在衬底上。

5. 发明授权

US08779517B2 FinFET-based ESD devices and methods for forming the same 有权
标题翻译：基于FinFET的ESD器件及其形成方法
公开(公告)号：US08779517B2
公开(公告)日：2014-07-15
申请号：US13415552
申请日：2012-03-08
申请人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
发明人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
IPC分类号： H01L23/62
CPC分类号： H01L27/0248 , H01L21/02529 , H01L21/02532 , H01L21/28518 , H01L21/76805 , H01L21/7684 , H01L21/76895 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L23/535 , H01L27/0266 , H01L27/027 , H01L27/0886 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/42372 , H01L29/66636 , H01L29/785
摘要： A device includes a plurality of STI regions, a plurality of semiconductor strips between the STI regions and parallel to each other, and a plurality of semiconductor fins over the semiconductor strips. A gate stack is disposed over and crossing the plurality of semiconductor fins. A drain epitaxy semiconductor region is disposed on a side of the gate stack and connected to the plurality of semiconductor fins. The drain epitaxy semiconductor region includes a first portion adjoining the semiconductor fins, wherein the first portion forms a continuous region over and aligned to the plurality of semiconductor strips. The drain epitaxy semiconductor region further includes second portions farther away from the gate stack than the first portion. Each of the second portions is over and aligned to one of the semiconductor strips. The second portions are parallel to each other, and are separated from each other by a dielectric material.
摘要翻译：一种器件包括多个STI区域，在STI区域之间并且彼此平行的多个半导体条以及半导体条上的多个半导体鳍片。栅极叠层设置在多个半导体鳍片上并与之交叉。漏极外延半导体区域设置在栅极堆叠的一侧并连接到多个半导体鳍片。所述漏极外延半导体区域包括邻接所述半导体鳍片的第一部分，其中所述第一部分在所述多个半导体条带之上形成连续区域并且与所述多个半导体条带对准。漏极外延半导体区域还包括比第一部分更远离栅极堆叠的第二部分。每个第二部分在其中一个半导体条上方并对齐。第二部分彼此平行，并且通过电介质材料彼此分离。

6. 发明申请

US20130193526A1 FinFET Body Contact and Method of Making Same 有权
公开(公告)号：US20130193526A1
公开(公告)日：2013-08-01
申请号：US13363026
申请日：2012-01-31
申请人： Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
发明人： Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/7831 , H01L27/0255 , H01L29/423 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.

7. 发明申请

US20130234250A1 FinFET-Based ESD Devices and Methods for Forming the Same 有权
标题翻译：基于FinFET的ESD器件及其形成方法
公开(公告)号：US20130234250A1
公开(公告)日：2013-09-12
申请号：US13415552
申请日：2012-03-08
申请人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
发明人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L27/0248 , H01L21/02529 , H01L21/02532 , H01L21/28518 , H01L21/76805 , H01L21/7684 , H01L21/76895 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L23/535 , H01L27/0266 , H01L27/027 , H01L27/0886 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/42372 , H01L29/66636 , H01L29/785
摘要： A device includes a plurality of STI regions, a plurality of semiconductor strips between the STI regions and parallel to each other, and a plurality of semiconductor fins over the semiconductor strips. A gate stack is disposed over and crossing the plurality of semiconductor fins. A drain epitaxy semiconductor region is disposed on a side of the gate stack and connected to the plurality of semiconductor fins. The drain epitaxy semiconductor region includes a first portion adjoining the semiconductor fins, wherein the first portion forms a continuous region over and aligned to the plurality of semiconductor strips. The drain epitaxy semiconductor region further includes second portions farther away from the gate stack than the first portion. Each of the second portions is over and aligned to one of the semiconductor strips. The second portions are parallel to each other, and are separated from each other by a dielectric material.
摘要翻译：一种器件包括多个STI区域，在STI区域之间并且彼此平行的多个半导体条以及半导体条上的多个半导体鳍片。栅极叠层设置在多个半导体鳍片上并与之交叉。漏极外延半导体区域设置在栅极堆叠的一侧并连接到多个半导体鳍片。所述漏极外延半导体区域包括邻接所述半导体鳍片的第一部分，其中所述第一部分在所述多个半导体条带之上形成连续区域并且与所述多个半导体条带对准。漏极外延半导体区域还包括比第一部分更远离栅极堆叠的第二部分。每个第二部分在其中一个半导体条上方并对齐。第二部分彼此平行，并且通过电介质材料彼此分离。

8. 发明申请

US20130168732A1 Vertical BJT and SCR for ESD 有权
标题翻译：垂直BJT和SCR用于ESD
公开(公告)号：US20130168732A1
公开(公告)日：2013-07-04
申请号：US13339189
申请日：2011-12-28
申请人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
发明人： Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L27/0262 , H01L29/732 , H01L29/74
摘要： An electrostatic discharge (ESD) protection device includes a well region formed from semiconductor material with a first doping type and a floating base formed from semiconductor material with a second doping type. The floating base is disposed vertically above the well region. The ESD also includes a first terminal receiving region formed from semiconductor material with a third doping type. The first terminal receiving region is disposed vertically above the floating base. The ESD further includes a second terminal receiving region. The second terminal receiving region is laterally spaced apart from the first terminal receiving region by silicon trench isolation (STI) region. In some embodiments, the second terminal receiving region is formed from semiconductor material with the third doping type to form a bipolar junction transmitter (BJT) or with a fourth doping type to form a silicon controlled rectifier (SCR).
摘要翻译：静电放电（ESD）保护装置包括由具有第一掺杂类型的半导体材料和由具有第二掺杂类型的半导体材料形成的浮动基底形成的阱区。浮动底座垂直设置在井区域上方。 ESD还包括由具有第三掺杂类型的半导体材料形成的第一端子接收区域。第一端子接收区域垂直设置在浮动基座上方。 ESD还包括第二终端接收区域。第二端子接收区域通过硅沟槽隔离（STI）区域与第一端子接收区域横向间隔开。在一些实施例中，第二端子接收区域由具有第三掺杂类型的半导体材料形成以形成双极结发送器（BJT）或具有第四掺杂类型以形成可控硅整流器（SCR）。

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