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1. 发明授权

US07238915B2 Methods and apparatus for irradiating a substrate to avoid substrate edge damage 有权
标题翻译：用于照射基板以避免基板边缘损坏的方法和装置
公开(公告)号：US07238915B2
公开(公告)日：2007-07-03
申请号：US11236271
申请日：2005-09-26
申请人： Boris Grek , David A. Markle
发明人： Boris Grek , David A. Markle
IPC分类号： B23K26/08
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/352 , B23K26/40 , B23K26/703 , B23K2101/40 , B23K2103/50 , B23K2103/56
摘要： Methods and apparatus (100) for scanning a surface (12) of a substrate (10) with an obliquely incident radiation beam (20) over a select scan path (210) to avoid damage (30) to the curved edge (14) of the substrate. The methods and apparatus allow for the substrate edge to be irradiated with the full intensity of the radiation beam, provided that the edge crossing positions avoid a region where the polar angle is less than a scan path critical (SPC) polar angle (φC). At the SPC polar angle the temperatures produced by scanning the beam on the substrate surface and on the edge are the same. The scan path is arranged so the edge crossing positions are located where the polar angle corresponding to each meets or exceeds the SPC polar angle. Ensuring that the substrate edge temperature (TE) remains at or below the substrate surface temperature (TS). The invention has particular utility in laser thermal processing (LTP) of circular silicon substrates when forming transistor-based integrated circuits.
摘要翻译：用于在选择扫描路径（210）上用倾斜入射的辐射束（20）扫描衬底（10）的表面（12）的方法和装置（100），以避免对弯曲边缘（14）的损伤（30）底物。如果边缘交叉位置避免极角小于扫描路径临界（SPC）极角（phi C ）。在SPC极角时，通过在基板表面和边缘上扫描光束产生的温度是相同的。扫描路径被布置成使得边缘交叉位置位于与每个相对应的极角相交或超过SPC极角的位置。确保衬底边缘温度（T EL）保持在或低于衬底表面温度（T S S S S S）。当形成基于晶体管的集成电路时，本发明在圆形硅衬底的激光热处理（LTP）中具有特别的用途。

2. 发明授权

US08153930B1 Apparatus and methods for improving the intensity profile of a beam image used to process a substrate 有权
标题翻译：用于改善用于处理衬底的光束图像的强度分布的装置和方法
公开(公告)号：US08153930B1
公开(公告)日：2012-04-10
申请号：US12381061
申请日：2009-03-06
申请人： Andrew M Hawryluk , Boris Grek , David A Markle
发明人： Andrew M Hawryluk , Boris Grek , David A Markle
IPC分类号： B23K26/00
CPC分类号： H01L21/2636 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
摘要翻译：提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

3. 发明授权

US07148159B2 Laser thermal annealing of lightly doped silicon substrates 有权
公开(公告)号：US07148159B2
公开(公告)日：2006-12-12
申请号：US10674106
申请日：2003-09-29
申请人： Somit Talwar , Michael O. Thompson , Boris Grek , David A. Markle
发明人： Somit Talwar , Michael O. Thompson , Boris Grek , David A. Markle
IPC分类号： H01L21/477
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0608 , B23K26/60 , H01L21/2026
摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

4. 发明授权

US07879741B2 Laser thermal annealing of lightly doped silicon substrates 有权
标题翻译：轻掺杂硅衬底的激光热退火
公开(公告)号：US07879741B2
公开(公告)日：2011-02-01
申请号：US11478171
申请日：2006-06-29
申请人： Somit Talwar , Michael O. Thompson , Boris Grek , David A. Markle
发明人： Somit Talwar , Michael O. Thompson , Boris Grek , David A. Markle
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0608 , B23K26/60 , H01L21/2026
摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.
摘要翻译：使用在室温基本上不吸收衬底的退火辐射束来进行衬底的激光热退火（LTA）的设备和方法。该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。该方法包括将衬底加热到长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。

5. 发明授权

US08742286B1 Apparatus and method for improving the intensity profile of a beam image used to process a substrate 有权
标题翻译：用于改善用于处理衬底的光束图像的强度分布的装置和方法
公开(公告)号：US08742286B1
公开(公告)日：2014-06-03
申请号：US13354300
申请日：2012-01-19
申请人： Andrew M Hawryluk , Boris Grek , David A Markle
发明人： Andrew M Hawryluk , Boris Grek , David A Markle
IPC分类号： H01L21/00
CPC分类号： H01L21/2636 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
摘要翻译：提供了用于改善用于处理半导体衬底的束图像的强度分布的方法和装置。可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

6. 发明授权

US08314360B2 Apparatuses and methods for irradiating a substrate to avoid substrate edge damage 有权
标题翻译：用于照射衬底以避免衬底边缘损坏的装置和方法
公开(公告)号：US08314360B2
公开(公告)日：2012-11-20
申请号：US13164700
申请日：2011-06-20
申请人： Boris Grek , David A. Markle
发明人： Boris Grek , David A. Markle
IPC分类号： H01L21/268
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/352 , B23K26/40 , B23K26/703 , B23K2101/40 , B23K2103/50 , B23K2103/56
摘要： Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.
摘要翻译：提供了用于处理具有上表面的基板的装置和方法，所述上表面包括中心区域，周边区域和与周边区域相邻的边缘。在衬底的上表面上扫描具有足以实现衬底的热处理的强度的图像。图像扫描几何形状允许以基本均匀的温度处理基板的中心区域而不损坏外边缘。在一些情况下，图像可以由在中心区域的至少一部分上行进的光束形成，使得当图像跨过周边区域扫描图像时，它的任何部分都不直接照亮边缘的任何部分。基板可以旋转180°，或者在部分扫描操作完成之后可以切换光束方向。

7. 发明申请

US20110249071A1 Apparatuses and methods for irradiating a substrate to avoid substrate edge damage 有权
标题翻译：用于照射衬底以避免衬底边缘损坏的装置和方法
公开(公告)号：US20110249071A1
公开(公告)日：2011-10-13
申请号：US13164700
申请日：2011-06-20
申请人： Boris Grek , David A. Markle
发明人： Boris Grek , David A. Markle
IPC分类号： B41J2/435
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/352 , B23K26/40 , B23K26/703 , B23K2101/40 , B23K2103/50 , B23K2103/56
摘要： Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.
摘要翻译：提供了用于处理具有上表面的基板的装置和方法，所述上表面包括中心区域，周边区域和与周边区域相邻的边缘。在衬底的上表面上扫描具有足以实现衬底的热处理的强度的图像。图像扫描几何形状允许以基本均匀的温度处理基板的中心区域而不损坏外边缘。在一些情况下，图像可以由在中心区域的至少一部分上行进的光束形成，使得当图像跨过周边区域扫描图像时，它的任何部分都不直接照亮边缘的任何部分。基板可以旋转180°，或者在部分扫描操作完成之后可以切换光束方向。

8. 发明授权

US07744274B1 Methods and apparatus for temperature measurement and control on a remote substrate surface 有权
标题翻译：用于远程基板表面温度测量和控制的方法和装置
公开(公告)号：US07744274B1
公开(公告)日：2010-06-29
申请号：US11820558
申请日：2007-06-20
申请人： Boris Grek , Michael Weitzel , David A. Markle
发明人： Boris Grek , Michael Weitzel , David A. Markle
IPC分类号： G01J1/00 , G01J1/08
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0821 , G01J5/0825 , G01J5/601 , G01J2005/0051 , G01J2005/202
摘要： Provided is an apparatus for substrate processing. The apparatus may include a radiation source emitting a photonic beam, an optical system to form a beam image, a scanning stage, a temperature monitoring means, an output signal generator that compares the monitored temperature with a preset temperature, and a controller coupled to the radiation source and the stage. The stage may be adapted to scan the substrate so the beam image heats a region of the substrate surface, and the temperature monitoring means may collect and analyzes p-polarized radiation of at least three different spectral regions emitted from one or more places on the heated substrate region. The controller in response to a temperature error signal may be programmed to alter the beam intensity and/or to provide changes in the scanning velocity between the stage and the beam. Other apparatuses and temperature monitoring systems are provided as well.
摘要翻译：提供了一种用于基板处理的装置。该装置可以包括发射光子束的辐射源，用于形成光束图像的光学系统，扫描级，温度监测装置，将监测到的温度与预设温度进行比较的输出信号发生器，以及耦合到辐射源和舞台。舞台可以适于扫描衬底，使得束图像加热衬底表面的区域，并且温度监视装置可以收集和分析从被加热的一个或多个位置发射的至少三个不同光谱区域的p偏振辐射底物区域。响应于温度误差信号的控制器可以被编程以改变光束强度和/或提供级和光束之间的扫描速度的变化。还提供了其他装置和温度监测系统。

9. 发明授权

US07514305B1 Apparatus and methods for improving the intensity profile of a beam image used to process a substrate 有权
标题翻译：用于改善用于处理衬底的光束图像的强度分布的装置和方法
公开(公告)号：US07514305B1
公开(公告)日：2009-04-07
申请号：US11476275
申请日：2006-06-28
申请人： Andrew M. Hawryluk , Boris Grek , David A. Markle
发明人： Andrew M. Hawryluk , Boris Grek , David A. Markle
IPC分类号： H01L21/00
CPC分类号： H01L21/2636 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
摘要翻译：提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

10. 发明申请

US20080173620A1 Apparatuses and methods for irradiating a substrate to avoid substrate edge damage 审中-公开
标题翻译：用于照射衬底以避免衬底边缘损坏的装置和方法
公开(公告)号：US20080173620A1
公开(公告)日：2008-07-24
申请号：US12005778
申请日：2007-12-27
申请人： Boris Grek , David A. Markle
发明人： Boris Grek , David A. Markle
IPC分类号： B23K26/08
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/352 , B23K26/40 , B23K26/703 , B23K2101/40 , B23K2103/50 , B23K2103/56
摘要： Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.
摘要翻译：提供了用于处理具有上表面的基板的装置和方法，所述上表面包括中心区域，周边区域和与周边区域相邻的边缘。在衬底的上表面上扫描具有足以实现衬底的热处理的强度的图像。图像扫描几何形状允许以基本均匀的温度处理基板的中心区域而不损坏外边缘。在一些情况下，图像可以由在中心区域的至少一部分上行进的光束形成，使得当图像跨过周边区域扫描图像时，它的任何部分都不直接照亮边缘的任何部分。基板可以旋转180°，或者在部分扫描操作完成之后可以切换光束方向。

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