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1. 发明授权

US07731798B2 Heated chuck for laser thermal processing 有权
标题翻译：加热卡盘用于激光热处理
公开(公告)号：US07731798B2
公开(公告)日：2010-06-08
申请号：US11001954
申请日：2004-12-01
申请人： Iqbal A. Shareef , Igor Landau , David A. Markle , Somit Talwar , Michael O. Thompson , Ivelin A. Angelov , Senquan Zhou
发明人： Iqbal A. Shareef , Igor Landau , David A. Markle , Somit Talwar , Michael O. Thompson , Ivelin A. Angelov , Senquan Zhou
IPC分类号： C23C16/00
CPC分类号： B23K26/703
摘要： A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.
摘要翻译：公开了一种用于在激光热处理（LTP）期间支撑晶片并在晶片上保持恒定背景温度的卡盘。卡盘包括散热器和加热器模块形式的热质量。加热器模块与散热器热连通，但是通过绝热层在物理上与其分离。热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗，而不是由辐射和对流损失。顶板布置在加热器模块的顶部，支撑要处理的晶片，并提供污染屏障。加热器模块耦合到电源，其适于向加热器模块提供变化量的功率，以将加热器模块保持在恒定的背景温度，即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。因此，来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。在没有激光加热的情况下，根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

2. 发明申请

US20090095724A1 Laser thermal processing with laser diode radiation 审中-公开
标题翻译：激光二极管辐射激光热处理
公开(公告)号：US20090095724A1
公开(公告)日：2009-04-16
申请号：US12316013
申请日：2008-12-09
申请人： Somit Talwar , David A. Markle
发明人： Somit Talwar , David A. Markle
IPC分类号： B23K26/00
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/067 , B23K26/073 , B23K26/0853 , B23K2101/40 , H01L21/268
摘要： A method and apparatus for performing laser thermal processing (LTP) using one or more two-dimensional arrays of laser diodes and corresponding one or more LTP optical systems to form corresponding one or more line images. The line images are scanned across a substrate, e.g., by moving the substrate relative to the one or more line images. The apparatus also includes one or more recycling optical systems arranged to re-image reflected annealing radiation back onto the substrate. The use of one or more recycling optical systems greatly improves the heating efficiency and uniformity during LTP.
摘要翻译：一种使用一个或多个激光二极管阵列和对应的一个或多个LTP光学系统进行激光热处理（LTP）的方法和装置，以形成对应的一个或多个线图像。线图像跨基板扫描，例如通过相对于一个或多个线图像移动基板。该装置还包括一个或多个再循环光学系统，其布置成将反射的退火辐射重新映射回衬底上。使用一个或多个循环光学系统大大提高了LTP期间的加热效率和均匀性。

3. 发明申请

US20070051708A1 Laser scanning apparatus and methods for thermal processing 有权
标题翻译：激光扫描装置及热处理方法
公开(公告)号：US20070051708A1
公开(公告)日：2007-03-08
申请号：US11592770
申请日：2006-11-03
申请人： Somit Talwar , David Markle
发明人： Somit Talwar , David Markle
IPC分类号： B23K26/06
CPC分类号： B23K26/0604 , B23K26/032 , B23K26/04 , B23K26/043 , B23K26/0643 , B23K26/0738 , B23K26/08 , B23K26/082 , B23K2101/40 , H01L21/268 , H01L21/324 , H01L22/10
摘要： Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.
摘要翻译：公开了用扫描激光辐射热处理衬底的装置和方法。该装置包括连续辐射源和在衬底上形成图像的光学系统。相对于基板表面扫描图像，使得处理区域中的每个点接收足以热处理该区域的辐射脉冲。

4. 发明授权

US07154066B2 Laser scanning apparatus and methods for thermal processing 有权
标题翻译：激光扫描装置及热处理方法
公开(公告)号：US07154066B2
公开(公告)日：2006-12-26
申请号：US10787664
申请日：2004-02-26
申请人： Somit Talwar , David A. Markle
发明人： Somit Talwar , David A. Markle
IPC分类号： B23K26/08
CPC分类号： B23K26/0604 , B23K26/032 , B23K26/04 , B23K26/043 , B23K26/0643 , B23K26/0738 , B23K26/08 , B23K26/082 , B23K2101/40 , H01L21/268 , H01L21/324 , H01L22/10
摘要： Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.
摘要翻译：公开了用扫描激光辐射热处理衬底的装置和方法。该装置包括连续辐射源和在衬底上形成图像的光学系统。相对于基板表面扫描图像，使得处理区域中的每个点接收足以热处理该区域的辐射脉冲。

5. 发明申请

US20060252282A1 Laser thermal annealing of lightly doped silicon substrates 有权
公开(公告)号：US20060252282A1
公开(公告)日：2006-11-09
申请号：US11481458
申请日：2006-07-06
申请人： Somit Talwar , David Markle
发明人： Somit Talwar , David Markle
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0608 , B23K26/60 , B23K2101/40 , H01L21/2026
摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

6. 发明授权

US06635541B1 Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer 有权
标题翻译：使用暴露于辐射能的部分吸收层退火的方法和用部分吸收层制成的制品
公开(公告)号：US06635541B1
公开(公告)日：2003-10-21
申请号：US09659102
申请日：2000-09-11
申请人： Somit Talwar , Yun Wang , Carol Gelatos
发明人： Somit Talwar , Yun Wang , Carol Gelatos
IPC分类号： H01L21331
CPC分类号： H01L21/324 , H01L21/268 , Y10S438/952
摘要： A method of the invention comprises forming a partial absorber layer (PAL) over at least one integrated transistor device formed on a semiconductor substrate, and exposing the PAL to radiant energy. A first portion of the radiant energy passes through the PAL and is absorbed in the source and drain regions adjacent a gate region of the integrated transistor device and in the semiconductor substrate underneath the field isolation regions of the integrated device. A second portion of the radiant energy is absorbed by the PAL and is thermally conducted from the PAL to the source and drain regions. The first and second portions of the radiant energy are sufficient to melt the source and drain regions to anneal the junctions of the integrated device. The first portion of radiant energy traveling to the substrate underneath the field isolation regions is insufficient in fluence to melt the substrate, and the second portion of radiant energy absorbed by PAL over the field isolation regions is insufficient to cause ablation or surface damage. Accordingly, the source and drain regions can be melted for annealing without overheating the PAL overlying or the substrate beneath the field isolation regions. The invention also includes an article including an integrated device made with a PAL.
摘要翻译：本发明的方法包括在半导体衬底上形成的至少一个集成晶体管器件上形成部分吸收层（PAL），并将PAL曝光到辐射能。辐射能的第一部分通过PAL并且被吸收在与集成晶体管器件的栅极区域相邻的源极和漏极区域以及集成器件的场隔离区域下方的半导体衬底中。辐射能的第二部分被PAL吸收，并且从PAL热传导到源区和漏区。辐射能的第一和第二部分足以熔化源极和漏极区域以退火集成器件的结。在场隔离区域下行进到衬底的辐射能的第一部分的能量密度不足以熔化衬底，并且由PAL在场隔离区域吸收的辐射能的第二部分不足以引起烧蚀或表面损伤。因此，源极和漏极区域可以被熔化以进行退火，而不会使PAL覆盖层或场隔离区域下面的衬底过热。本发明还包括一种包括由PAL制成的集成装置的物品。

7. 发明授权

US06388297B1 Structure and method for an optical block in shallow trench isolation for improved laser anneal control 有权
标题翻译：浅沟槽隔离中光学块的结构和方法，用于改进的激光退火控制
公开(公告)号：US06388297B1
公开(公告)日：2002-05-14
申请号：US09547834
申请日：2000-04-12
申请人： Somit Talwar , John Cronin
发明人： Somit Talwar , John Cronin
IPC分类号： H01L2120
CPC分类号： H01L21/02675 , H01L21/02381 , H01L21/2026 , H01L21/268 , H01L21/76224
摘要： A shallow trench isolation (STI) structure (170, 300), formed in a silicon substrate (110) for use in sub-micron integrated circuit devices, for providing enhanced absorption of a wavelength of laser light during laser annealing. The STI structure includes a shallow trench (140) having a depth of 0.5 &mgr;m or less etched in the silicon substrate, and an optical blocking member (174, 304) that includes an insulator (144, 224) formed in the shallow trench and designed to reflect or absorb the wavelength of laser light to mitigate redistribution of the dopant and/or recrystallization of a portion of the silicon substrate. Methods of forming the optical blocking member are also disclosed.
摘要翻译：在用于亚微米集成电路器件的硅衬底（110）中形成的浅沟槽隔离（STI）结构（170,300），用于在激光退火期间提供增强的激光波长吸收。 STI结构包括在硅衬底中蚀刻深度为0.5μm或更小的浅沟槽（140），以及包括形成在浅沟槽中的绝缘体（144,224）的光学阻挡构件（174,304），并被设计以反射或吸收激光的波长以减轻掺杂剂的再分布和/或一部分硅衬底的再结晶。还公开了形成光学阻挡构件的方法。

8. 发明授权

US07763828B2 Laser thermal processing with laser diode radiation 有权
标题翻译：激光二极管辐射激光热处理
公开(公告)号：US07763828B2
公开(公告)日：2010-07-27
申请号：US10653625
申请日：2003-09-02
申请人： Somit Talwar , David A. Markle
发明人： Somit Talwar , David A. Markle
IPC分类号： B23K26/00 , B23K26/02
CPC分类号： B23K26/0604 , B23K26/073 , B23K2101/40
摘要： A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.
摘要翻译：一种使用激光二极管的二维阵列进行激光热处理（LTP）的方法和装置，以形成跨越衬底扫描的线像。该装置包括激光二极管的二维阵列，使用柱面透镜阵列在一个平面中准直的辐射，并使用异常远心光学成像系统作为线图像成像到基板上。该装置还包括用于支撑待处理LTP的衬底的扫描衬底台。对于给定的衬底材料，激光二极管辐射束以布鲁斯特角度或附近的角度入射到衬底上，并且是线性P偏振的辐射束的波长。使用二维激光二极管阵列允许将相对较高能量密度的偏振辐射束输送到衬底，从而允许LTP处理具有良好的均匀性，合理短的停留时间，并因此允许相当高的通量。

9. 发明授权

US07326877B2 Laser thermal processing chuck with a thermal compensating heater module 有权
标题翻译：激光热处理卡盘配有热补偿加热器模块
公开(公告)号：US07326877B2
公开(公告)日：2008-02-05
申请号：US11002043
申请日：2004-12-01
申请人： Iqbal A. Shareef , Igor Landau , David A. Markle , Somit Talwar , Michael O. Thompson , Ivelin A. Angelov , Senquan Zhou
发明人： Iqbal A. Shareef , Igor Landau , David A. Markle , Somit Talwar , Michael O. Thompson , Ivelin A. Angelov , Senquan Zhou
IPC分类号： B23K26/00
CPC分类号： H01L21/67109 , B23K26/10 , B23K26/702 , B23K26/703 , H01L2924/0002 , H01L2924/00
摘要： Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.
摘要翻译：用于支撑半导体衬底并将其保持在基本上恒定的背景温度的Chuck方法和装置，即使在经受空间和时间变化的热负载时。卡盘包括一个热补偿加热器模块，其具有包含加热元件，芯和碱金属液体/蒸气的密封腔。该室采用热管原理来均衡模块中的温差。空间变化的热负荷通过加热器模块的热导率快速地均匀。从加热器模块的底部散热恒定的热量可以适应热负荷的大的时间变化。恒定的热损失优选地至少与输入热负荷的最大变化一样大，通过辐射和对流损失的热量较少，因此需要通过电加热元件的热输入。这允许卡盘的温度控制，从而允许基板的温度控制。

10. 发明授权

US07145104B2 Silicon layer for uniformizing temperature during photo-annealing 有权
标题翻译：用于光退火期间的均匀化温度的硅层
公开(公告)号：US07145104B2
公开(公告)日：2006-12-05
申请号：US10787688
申请日：2004-02-26
申请人： Somit Talwar , Michael O. Thompson
发明人： Somit Talwar , Michael O. Thompson
IPC分类号： F27B5/14 , H01L21/324
CPC分类号： H01L21/324 , H01L21/26513 , H01L21/268 , H01L21/2686
摘要： An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irradiating the layer with one or more pulses of radiation having wavelengths that are substantially absorbed by the silicon layer. The silicon layer acts to uniformly absorb the one or more radiation pulses and then transfers the heat from the absorbed radiation to the process regions across the wafer.
摘要翻译：公开了一种用于使晶片中形成的工艺区域的辐射退火过程中半导体晶片温度分布均匀化的装置和方法。该方法包括在晶片的上表面顶部形成硅层，并用一个或多个辐射脉冲照射具有基本被硅层吸收的波长的辐射。硅层用于均匀地吸收一个或多个辐射脉冲，然后将热量从吸收的辐射传送到晶片上的处理区域。

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