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1. 发明授权

US08503212B2 Semiconductor memory apparatus with power-meshed structure 失效
标题翻译：具有电力网格结构的半导体存储器件
公开(公告)号：US08503212B2
公开(公告)日：2013-08-06
申请号：US12843647
申请日：2010-07-26
申请人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
发明人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
IPC分类号： G11C5/06 , H01L23/52
CPC分类号： G11C5/063 , G11C5/025
摘要： A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
摘要翻译：一种半导体存储装置，包括：多个存储体，每个存储体具有多个单元格层; 多个电源线，布置在所述多个银行的每一个的预定部分上; 与每个组的至少一个侧面相邻设置的列控制区，其垂直于电力线的延伸方向; 以及设置在所述列控制区域上并电连接到所述多个电力线的导电板。

2. 发明申请

US20130117477A1 WIRELESS SIGNAL TRANSMITTING/RECEIVING APPARATUS FOR SEMICONDUCTOR SYSTEM 审中-公开
标题翻译：无线信号发射/接收装置用于半导体系统
公开(公告)号：US20130117477A1
公开(公告)日：2013-05-09
申请号：US13524518
申请日：2012-06-15
申请人： Yang Hee KIM , Ic Su Oh , Jun Ho Lee , Hyun Seok Kim , Boo Ho Jung , Sun Ki Cho
发明人： Yang Hee KIM , Ic Su Oh , Jun Ho Lee , Hyun Seok Kim , Boo Ho Jung , Sun Ki Cho
IPC分类号： G06F13/12
CPC分类号： H04L25/4906
摘要： A wireless signal transmitting/receiving apparatus for a semiconductor system is disclosed The apparatus includes a serializer/deserializer (SERDES) circuit and a coupling pad. The SERDES circuit outputs a parallel input signal as a serial signal during transmission, and outputs a serial input signal as a parallel signal during reception. The coupling pad generates an inductively coupled wireless signal according to the serial signal outputted from the SERDES circuit, and provides a signal generated by inductive coupling with an external device as the serial input signal of the SERDES circuit.
摘要翻译：公开了一种用于半导体系统的无线信号发送/接收装置。该装置包括串行器/解串器（SERDES）电路和耦合垫。 SERDES电路在传输期间输出并行输入信号作为串行信号，并在接收期间输出串行输入信号作为并行信号。耦合垫根据从SERDES电路输出的串行信号产生电感耦合无线信号，并通过与外部设备的电感耦合产生的信号作为SERDES电路的串行输入信号。

3. 发明授权

US08405454B2 Output circuit of semiconductor apparatus having two different types of decoupling capacitors 失效
标题翻译：具有两种不同类型的去耦电容器的半导体装置的输出电路
公开(公告)号：US08405454B2
公开(公告)日：2013-03-26
申请号：US12843985
申请日：2010-07-27
申请人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Yang Hee Kim
发明人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Yang Hee Kim
IPC分类号： H01L25/00
CPC分类号： H01L25/00 , H01L2924/0002 , H01L2924/00
摘要： An output circuit of a semiconductor apparatus having two different types of decoupling capacitors is presented. The output circuit includes a first pad, a second pad, a main output unit and a decoupling capacitor region. The first and second pads are configured to respectively provide a power supply voltage and a ground voltage. The main output unit is coupled to the first and second pads. One end of the decoupling capacitor region is coupled to the first pad and the other end is coupled to the second pad. The decoupling capacitor region includes a first decoupling capacitor region spaced apart from a portion of the main output unit by a first distance, and a second decoupling capacitor region spaced apart from the main output unit by a second distance which is greater than the first distance.
摘要翻译：提出了具有两种不同类型的去耦电容器的半导体装置的输出电路。输出电路包括第一焊盘，第二焊盘，主输出单元和去耦电容器区域。第一和第二焊盘被配置为分别提供电源电压和接地电压。主输出单元耦合到第一和第二焊盘。去耦电容器区域的一端耦合到第一焊盘，另一端耦合到第二焊盘。去耦电容器区域包括与主输出单元的一部分间隔开第一距离的第一去耦电容器区域和与主输出单元间隔开大于第一距离的第二距离的第二去耦电容器区域。

4. 发明授权

US08633568B2 Multi-chip package with improved signal transmission 有权
标题翻译：具有改进信号传输的多芯片封装
公开(公告)号：US08633568B2
公开(公告)日：2014-01-21
申请号：US12983211
申请日：2010-12-31
申请人： Young Won Kim , Jun Ho Lee , Hyun Seok Kim , Boo Ho Jung , Sun Ki Cho , Yang Hee Kim
发明人： Young Won Kim , Jun Ho Lee , Hyun Seok Kim , Boo Ho Jung , Sun Ki Cho , Yang Hee Kim
IPC分类号： H01L27/08
CPC分类号： H01L25/0657 , H01L23/48 , H01L2225/06531 , H01L2924/00013 , H01L2924/0002 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： Provided is an MCP including a plurality chips stacked therein. Each of the chips includes a plurality of inductor pads configured to transmit power or signals, and at both sides of a reference inductor pad, a first and a second inductor pads are formed to generate magnetic fluxes in different directions from each other.
摘要翻译：提供了包括堆叠在其中的多个芯片的MCP。每个芯片包括被配置为传输功率或信号的多个电感器焊盘，并且在参考电感器焊盘的两侧，形成第一和第二电感器焊盘，以在彼此不同的方向上产生磁通量。

5. 发明授权

US08421528B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US08421528B2
公开(公告)日：2013-04-16
申请号：US13097326
申请日：2011-04-29
申请人： Hyun Seok Kim , Jun Ho Lee , Boo Ho Jung , Sun Ki Cho , Yang Hee Kim , Young Won Kim
发明人： Hyun Seok Kim , Jun Ho Lee , Boo Ho Jung , Sun Ki Cho , Yang Hee Kim , Young Won Kim
IPC分类号： G05F1/10
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.
摘要翻译：半导体集成电路包括施加第一接地电压的第一电压线，施加第二接地电压的第二电压线，施加第一电源电压的第三电压线，以及包括 MOS晶体管，其具有耦合到第一电压线的源极，耦合到第二电压线的漏极和耦合到第三电压线的栅极。

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