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    • 5. 发明授权
    • Optical device having strained buried channel
    • 具有应变埋入通道的光学器件
    • US07928442B2
    • 2011-04-19
    • US12441381
    • 2007-08-17
    • Bongki MheenJeong-Woo ParkHyun-Soo KimGyungock Kim
    • Bongki MheenJeong-Woo ParkHyun-Soo KimGyungock Kim
    • H01L31/036
    • G02F1/025G02F1/2257H01L33/0037
    • Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
    • 提供了具有应变埋入通道区域的光学装置。 该光学器件包括:第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区,并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域,具有与形成半导体衬底的材料不同的晶格参数,并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。
    • 9. 发明申请
    • OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL
    • 具有应变通道的光学器件
    • US20090261383A1
    • 2009-10-22
    • US12441381
    • 2007-08-17
    • Bongki MheenJeong-Woo ParkHyun-Soo KimGyungock Kim
    • Bongki MheenJeong-Woo ParkHyun-Soo KimGyungock Kim
    • H01L29/80
    • G02F1/025G02F1/2257H01L33/0037
    • Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
    • 提供了具有应变埋入通道区域的光学装置。 该光学器件包括:第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区,并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域,具有与形成半导体衬底的材料不同的晶格参数,并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。