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1. 发明授权

US07646942B2 Silicon semiconductor based high-speed ring optical modulator 失效
标题翻译：硅半导体高速环形光调制器
公开(公告)号：US07646942B2
公开(公告)日：2010-01-12
申请号：US11833004
申请日：2007-08-02
申请人： Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
发明人： Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
IPC分类号： G02F1/035 , G02B6/26
CPC分类号： G02F1/025 , G02F1/3133 , G02F2001/0152 , G02F2203/15
摘要： Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.
摘要翻译：提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。折射率变化部分包括双极晶体管。因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

2. 发明申请

US20090237770A1 OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS 有权
标题翻译：光学装置，包括具有调制厚度的门绝缘体
公开(公告)号：US20090237770A1
公开(公告)日：2009-09-24
申请号：US12375343
申请日：2007-04-24
申请人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
发明人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
IPC分类号： G02F1/015 , H01L29/78 , H01L33/00
CPC分类号： G02F1/025 , G02F1/225 , G02F1/3132 , H01L31/105
摘要： Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
摘要翻译：提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层，形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

3. 发明申请

US20090207472A1 OPTICAL DEVICE INCLUDING GATE INSULATING LAYER HAVING EDGE EFFECT 有权
标题翻译：光学装置，包括具有边缘效应的盖绝缘层
公开(公告)号：US20090207472A1
公开(公告)日：2009-08-20
申请号：US12374261
申请日：2007-04-24
申请人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
发明人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
IPC分类号： G02F1/015 , H01L29/786
CPC分类号： G02F1/025 , G02F2203/50 , G11C13/04
摘要： Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.
摘要翻译：提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

4. 发明授权

US08346026B2 Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device 失效
标题翻译：光电器件采用PN二极管和硅集成电路（IC），包括光电器件
公开(公告)号：US08346026B2
公开(公告)日：2013-01-01
申请号：US12517802
申请日：2007-08-07
申请人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
发明人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
IPC分类号： G02F1/035 , G02B6/12 , G02B6/00
CPC分类号： H01L31/12 , H01L27/144
摘要： Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
摘要翻译：提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

5. 发明授权

US07928442B2 Optical device having strained buried channel 有权
标题翻译：具有应变埋入通道的光学器件
公开(公告)号：US07928442B2
公开(公告)日：2011-04-19
申请号：US12441381
申请日：2007-08-17
申请人： Bongki Mheen , Jeong-Woo Park , Hyun-Soo Kim , Gyungock Kim
发明人： Bongki Mheen , Jeong-Woo Park , Hyun-Soo Kim , Gyungock Kim
IPC分类号： H01L31/036
CPC分类号： G02F1/025 , G02F1/2257 , H01L33/0037
摘要： Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
摘要翻译：提供了具有应变埋入通道区域的光学装置。该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

6. 发明授权

US07924492B2 Optical device including gate insulating layer having edge effect 有权
标题翻译：光学器件包括具有边缘效应的栅极绝缘层
公开(公告)号：US07924492B2
公开(公告)日：2011-04-12
申请号：US12374261
申请日：2007-04-24
申请人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
发明人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
IPC分类号： G02F1/07
CPC分类号： G02F1/025 , G02F2203/50 , G11C13/04
摘要： Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.
摘要翻译：提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

7. 发明授权

US07994549B2 Optical device including gate insulator with modulated thickness 有权
标题翻译：光学器件包括调制厚度的栅极绝缘体
公开(公告)号：US07994549B2
公开(公告)日：2011-08-09
申请号：US12375343
申请日：2007-04-24
申请人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
发明人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
IPC分类号： H01L29/76
CPC分类号： G02F1/025 , G02F1/225 , G02F1/3132 , H01L31/105
摘要： Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
摘要翻译：提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅极绝缘层，其具有形状并且形成在所述第一半导体层的一部分上并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

8. 发明申请

US20100002978A1 PHOTOELECTRIC DEVICE USING PN DIODE AND SILICON INTEGRATED CIRCUIT (IC) INCLUDING THE PHOTOELECTRIC DEVICE 失效
标题翻译：使用包括光电装置的PN二极管和硅集成电路（IC）的光电装置
公开(公告)号：US20100002978A1
公开(公告)日：2010-01-07
申请号：US12517802
申请日：2007-08-07
申请人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
发明人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
IPC分类号： G02F1/035 , G02B6/12
CPC分类号： H01L31/12 , H01L27/144
摘要： Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
摘要翻译：提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

9. 发明申请

US20090261383A1 OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL 有权
标题翻译：具有应变通道的光学器件
公开(公告)号：US20090261383A1
公开(公告)日：2009-10-22
申请号：US12441381
申请日：2007-08-17
申请人： Bongki Mheen , Jeong-Woo Park , Hyun-Soo Kim , Gyungock Kim
发明人： Bongki Mheen , Jeong-Woo Park , Hyun-Soo Kim , Gyungock Kim
IPC分类号： H01L29/80
CPC分类号： G02F1/025 , G02F1/2257 , H01L33/0037
摘要： Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
摘要翻译：提供了具有应变埋入通道区域的光学装置。该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

10. 发明授权

US08180184B2 Absorption modulator and manufacturing method thereof 有权
标题翻译：吸收调制剂及其制造方法
公开(公告)号：US08180184B2
公开(公告)日：2012-05-15
申请号：US12504607
申请日：2009-07-16
申请人： Jeong Woo Park , Jongbum You , Gyungock Kim
发明人： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F2001/0156 , G02F2201/063 , G02F2201/12 , G02F2202/105 , G02F2202/32
摘要： An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
摘要翻译：提供吸收调制器。吸收调制器包括衬底，设置在衬底上的绝缘层和在绝缘层上具有P-I-N二极管结构的波导。当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

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