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1. 发明申请

US20090095894A1 TECHNIQUES FOR COMMENSURATE CUSP-FIELD FOR EFFECTIVE ION BEAM NEUTRALIZATION 有权
标题翻译：用于有意义的离子束中和的通用现场技术
公开(公告)号：US20090095894A1
公开(公告)日：2009-04-16
申请号：US11872576
申请日：2007-10-15
申请人： Bon Woong Koo , Frank Sinclair
发明人： Bon Woong Koo , Frank Sinclair
IPC分类号： H05H3/02
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0042 , H01J2237/04 , H01J2237/05
摘要： Techniques for commensurate cusp-field for effective ion beam neutralization are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle injection system comprising a beamguide configured to transport an ion beam through a dipole field. The charged particle injection system may also comprise a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, positioned along at least a portion of an ion beam path, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The charged particle injection system may further comprise a charged particle source having one or more apertures configured to inject charged particles into the ion beam path. The charged particle injection system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam path.
摘要翻译：公开了用于有效离子束中和的相应尖点的技术。在一个特定的示例性实施例中，技术可以被实现为带电粒子注入系统，其包括配置成将离子束传送通过偶极子场的波导。带电粒子注入系统还可以包括第一磁体阵列和配置成产生沿离子束路径的至少一部分定位的多尖点磁场的第二磁体阵列，第一磁体阵列位于第一离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。带电粒子注入系统还可以包括具有一个或多个孔的带电粒子源，其被配置为将带电粒子注入到离子束路径中。带电粒子注入系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以将来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，用于有效带电粒子扩散入离子束路径。

2. 发明授权

US07692139B2 Techniques for commensurate cusp-field for effective ion beam neutralization 有权
标题翻译：用于有效离子束中和的相应尖点的技术
公开(公告)号：US07692139B2
公开(公告)日：2010-04-06
申请号：US11872576
申请日：2007-10-15
申请人： Bon Woong Koo , Frank Sinclair
发明人： Bon Woong Koo , Frank Sinclair
IPC分类号： H01J37/317
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0042 , H01J2237/04 , H01J2237/05
摘要： A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.
摘要翻译：用于离子束中和的系统包括被配置为将离子束传送通过偶极场的波导，第一磁体阵列和被配置为产生多尖点磁场的第二磁体阵列，第一磁体阵列位于第一离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。该系统还可以包括具有一个或多个孔的带电粒子源，所述孔被配置为将带电粒子注入到离子束中。该系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以使来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，以使有效的带电粒子扩散成离子束。

3. 发明授权

US07700925B2 Techniques for providing a multimode ion source 有权
标题翻译：提供多模离子源的技术
公开(公告)号：US07700925B2
公开(公告)日：2010-04-20
申请号：US11966312
申请日：2007-12-28
申请人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
发明人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J37/08
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

4. 发明申请

US20090166554A1 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 有权
标题翻译：提供多个离子源的技术
公开(公告)号：US20090166554A1
公开(公告)日：2009-07-02
申请号：US11966312
申请日：2007-12-28
申请人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
发明人： Svetlana Radovanov , Bon Woong Koo , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

5. 发明授权

US07878145B2 Monitoring plasma ion implantation systems for fault detection and process control 失效
标题翻译：监测等离子体离子注入系统进行故障检测和过程控制
公开(公告)号：US07878145B2
公开(公告)日：2011-02-01
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
IPC分类号： C23C16/00
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译：等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

6. 发明授权

US07888636B2 Measuring energy contamination using time-of-flight techniques 失效
标题翻译：使用飞行时间技术测量能量污染
公开(公告)号：US07888636B2
公开(公告)日：2011-02-15
申请号：US11933934
申请日：2007-11-01
申请人： Bon Woong Koo , Jonathan Gerald England
发明人： Bon Woong Koo , Jonathan Gerald England
IPC分类号： H01J49/40
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/0225 , H01J2237/24485 , H01J2237/24507 , H01J2237/24585 , H01J2237/31703
摘要： Techniques for measuring energy contamination using time-of-flight (TOF) sensor are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for detecting energy contamination in an ion beam using time-of-flight comprising directing an ion beam towards an entrance of a sensor, wherein the ion beam may include charged particles and neutral particles, blocking the ion beam periodically from entering the sensor and allowing a pulse of the ion beam to enter the sensor periodically using a gate mechanism, separating the charged particles and the neutral particles of the ion beam pulse based at least in part upon different transit times over a distance caused by variations in at least one of mass and energy associated with the charged particles and the neutral particles, and detecting at least one of the charged particles and the neutral particles separately at a detector based at least in part upon the different transit times.
摘要翻译：公开了使用飞行时间（TOF）传感器测量能量污染的技术。在一个特定的示例性实施例中，技术可以被实现为使用飞行时间来检测离子束中的能量污染的方法，包括将离子束朝向传感器的入口引导，其中离子束可以包括带电粒子和中性颗粒，阻止离子束周期性地进入传感器并且允许离子束的脉冲使用门机构周期性地进入传感器，至少部分地基于不同的转移分离带电粒子和离子束脉冲的中性粒子在与带电粒子和中性粒子相关联的质量和能量中的至少一种的变化引起的一段距离上的时间，以及至少部分地基于不同的方式在检测器处分别检测带电粒子和中性粒子中的至少一个过境时间

7. 发明申请

US20080026133A1 Monitoring plasma ion implantation systems for fault detection and process control 失效
标题翻译：监测等离子体离子注入系统进行故障检测和过程控制
公开(公告)号：US20080026133A1
公开(公告)日：2008-01-31
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
IPC分类号： C23C16/52 , B05C11/00
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译：等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

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