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1. 发明申请

US20090200269A1 PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE 有权
标题翻译：一种等离子体加工室的保护涂层及其使用方法
公开(公告)号：US20090200269A1
公开(公告)日：2009-08-13
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C14/34 , C23C16/00 , C23C14/00 , H05H1/24 , C23F1/08
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

2. 发明授权

US08522716B2 Protective coating for a plasma processing chamber part and a method of use 有权
标题翻译：用于等离子体处理室部件的保护涂层和使用方法
公开(公告)号：US08522716B2
公开(公告)日：2013-09-03
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23F1/08 , C23C14/34 , C23C16/00 , H05H1/24
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

3. 发明授权

US09978565B2 Systems for cooling RF heated chamber components 有权
公开(公告)号：US09978565B2
公开(公告)日：2018-05-22
申请号：US13292649
申请日：2011-11-09
申请人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
发明人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32119 , H01J37/32238
摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

4. 发明授权

US09082805B2 System and method for testing an electrostatic chuck 有权
标题翻译：用于测试静电卡盘的系统和方法
公开(公告)号：US09082805B2
公开(公告)日：2015-07-14
申请号：US13372423
申请日：2012-02-13
申请人： Hong Shih , Saurabh Ullal , Tuochuan Huang , Yan Fang , Jon McChesney
发明人： Hong Shih , Saurabh Ullal , Tuochuan Huang , Yan Fang , Jon McChesney
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/6833
摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.
摘要翻译：本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。该参数功能可用于建立频带内参数的预定可接受极限。

5. 发明申请

US20130244440A1 CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING 有权
标题翻译：用于快速气体切换的等离子体气室的室内填充试剂盒
公开(公告)号：US20130244440A1
公开(公告)日：2013-09-19
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.
摘要翻译：一种用于电感耦合等离子体处理室的腔室填充器套件，其中通过将RF能量通过面向支撑在悬臂卡盘上的衬底的窗口感应耦合来处理半导体衬底。该套件包括至少一个室填充物，其减小了在卡盘下方的腔室中的下室体积。套件的填充物可以安装在具有超过60升的室容积的标准室中，并且通过使用不同尺寸的室填料，可以减小室体积以提供期望的气体流动传导并适应处理过程中真空压力的变化底物。腔室填充套件可用于修改标准室以适应不同的处理方式，例如需要宽压力变化的快速交替过程，而不改变衬底和窗口之间的间隙。

6. 发明授权

US06727655B2 Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber 失效
标题翻译：监测半导体处理室中工件的电状态的方法和装置
公开(公告)号：US06727655B2
公开(公告)日：2004-04-27
申请号：US10055437
申请日：2001-10-26
申请人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
发明人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/32935 , H01L21/67069
摘要： A method and apparatus is disclosed to monitor and/or control the electrical states at a workpiece disposed in a plasma chamber that is in electrical communication with an RF signal source over a defined signal path. The method includes ascertaining an impedance of the signal path, sensing electrical characteristics of the RF power at the RF signal source and obtaining values of the electrical states at the workpiece. To provide a more accurate model of the electrical states at the workpiece, the modeling includes information concerning the impedance introduced by the signal path. This technique may be employed to provide feedback control of the RF generator, so that the electrical states may be dynamically adjusted be within predefined, or desired, parameters.
摘要翻译：公开了一种监测和/或控制设置在等离子体室中的工件上的电状态的方法和装置，该等离子体腔室通过限定的信号路径与RF信号源电连通。该方法包括确定信号路径的阻抗，感测RF信号源处的RF功率的电特性并获得工件处的电状态的值。为了提供工件上电状态的更准确的模型，建模包括有关由信号路径引入的阻抗的信息。可以采用这种技术来提供RF发生器的反馈控制，使得电状态可以在预定义或期望的参数内被动态调整。

7. 发明申请

US20130087283A1 Systems For Cooling RF Heated Chamber Components 有权
标题翻译： RF加热室部件冷却系统
公开(公告)号：US20130087283A1
公开(公告)日：2013-04-11
申请号：US13292649
申请日：2011-11-09
申请人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
发明人： Jon McChesney , Saravanapriyan Sriraman , Ricky Marsh , Alex Paterson , John Holland
IPC分类号： H01L21/3065
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32119 , H01J37/32238
摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.
摘要翻译：在一个实施例中，等离子体处理装置可以包括电介质窗，真空室，能量源和至少一个空气放大器。电介质窗口可以包括等离子体暴露表面和空气暴露表面。电介质窗口的真空室和等离子体暴露表面可以配合以包围等离子体处理气体。能量源可以通过电介质窗口传输电磁能并在电介质窗口中形成升高的温度区域。至少一个空气放大器可以与电介质窗口流体连通。至少一个空气放大器可以在至少约1in-H 2 O的背压下操作，并且可以提供至少约30cfm的空气。

8. 发明申请

US20120153971A1 SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
标题翻译：用于测试静电卡盘的系统和方法
公开(公告)号：US20120153971A1
公开(公告)日：2012-06-21
申请号：US13372423
申请日：2012-02-13
申请人： Hong Shih , Saurabh Ullal , Tuochuan Huang , Yan Fang , Jon McChesney
发明人： Hong Shih , Saurabh Ullal , Tuochuan Huang , Yan Fang , Jon McChesney
IPC分类号： G01R27/26 , G01R23/02
CPC分类号： H01L21/6833
摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.
摘要翻译：本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。该参数功能可用于建立频带内参数的预定可接受极限。

9. 发明申请

US20050016465A1 Electrostatic chuck having electrode with rounded edge 审中-公开
标题翻译：具有圆形边缘电极的静电吸盘
公开(公告)号：US20050016465A1
公开(公告)日：2005-01-27
申请号：US10626156
申请日：2003-07-23
申请人： Kartik Ramaswamy , Jon McChesney , Ananda Kumar , Hamid Noorbakhsh
发明人： Kartik Ramaswamy , Jon McChesney , Ananda Kumar , Hamid Noorbakhsh
IPC分类号： H01L21/68 , H01L21/683 , H02N13/00 , C23C16/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about π/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.
摘要翻译：静电吸盘可以减少围绕其外围边缘的电场效应。在一个版本中，卡盘包括覆盖具有周边的电极的电介质和围绕周边延伸的导线环，所述导线环具有基本上圆形的径向向外的表面。或者，电极可以具有包括顶表面和底表面的中心平面部分，以及周边弓形部分，其具有尖端，该尖端具有在中心平面的顶表面之间的法线之间的至少约π/ 8弧度的曲率长度并且与尖端的上表面垂直。静电卡盘用于将基板保持在基板处理装置的处理室中。

10. 发明授权

US09679751B2 Chamber filler kit for plasma etch chamber useful for fast gas switching 有权
公开(公告)号：US09679751B2
公开(公告)日：2017-06-13
申请号：US13421188
申请日：2012-03-15
申请人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
发明人： Jon McChesney , Theo Panagopoulos , Alex Paterson , Craig Blair
IPC分类号： C23C16/44 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.

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