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    • 5. 发明申请
    • Method and program product of level converter optimization
    • 电平转换器优化的方法和程序产品
    • US20050114815A1
    • 2005-05-26
    • US10720562
    • 2003-11-24
    • Anthony CorrealeDavid KungDouglass LambZhigang PanRuchir Puri
    • Anthony CorrealeDavid KungDouglass LambZhigang PanRuchir Puri
    • G06F17/50
    • G06F17/5068G06F17/5045
    • A method and program product for optimizing level converter placement in a multi supply integrated circuit. Each level converter is placed at a minimum power point to minimize net power and transitional delay from a first (low) voltage net source through the level converter and to a second (higher) voltage net sink. Then, inefficient level converters are eliminated. Level converters with fanin cones below a selected minimum cone size are deleted and low voltage sources to the deleted level converter reverted. Higher voltage level circuit elements receiving inputs from multiple level converters are replaced with equivalent low voltage circuit elements. Low voltage buffer driving level converters are both replaced by a single said level converter.
    • 一种用于优化多电源集成电路中的电平转换器放置的方法和程序产品。 每个电平转换器被放置在最小功率点以最小化净功率和从第一(低)电压净源通过电平转换器到第二(较高)电压净接收器的过渡延迟。 然后,消除了低效率的电平转换器。 具有低于选定的最小锥度尺寸的扇形锥体的电平转换器被删除,并且删除的电平转换器的低电压源恢复。 接收来自多电平转换器的输入的更高电压电平的电路元件被等效的低电压电路元件代替。 低电压缓冲器驱动电平转换器都由单个所述电平转换器代替。
    • 7. 发明申请
    • SYSTEMS AND MEDIA TO IMPROVE MANUFACTURABILITY OF SEMICONDUCTOR DEVICES
    • 系统和介质提高半导体器件的制造能力
    • US20080115093A1
    • 2008-05-15
    • US11971171
    • 2008-01-08
    • Benjamin BowersAnthony Correale
    • Benjamin BowersAnthony Correale
    • G06F17/50
    • G06F17/505G06F2217/12Y02P90/265
    • Methods, systems, and media to improve the manufacturability of cells and structures within cells of an integrated circuit are disclosed. Embodiments comprise a method of arranging programmable cells, routing the programmable cells, analyzing the cell arrangement and interconnect wiring for manufacturing improvement opportunities, and modifying the programmable cell structures to incorporate the manufacturing improvements. In some embodiments, wires are spread to prevent shorting. In other embodiments, the reliability of contacts and vias is improved by adding additional metallization to the areas surrounding the contacts and vias, or by adding redundant contacts and vias. In one embodiment, a series of manufacturing improvements are made to integrated circuit cells in an iterative fashion.
    • 公开了用于提高集成电路单元内的单元和结构的可制造性的方法,系统和介质。 实施例包括布置可编程单元,布线可编程单元,分析单元布置并互连布线以用于制造改进机会的方法,以及修改可编程单元结构以结合制造改进。 在一些实施例中,布线以防止短路。 在其他实施例中,通过向周围的触点和通孔附加额外的金属化,或通过添加冗余的触点和通孔来改善触点和通孔的可靠性。 在一个实施例中,以迭代方式对集成电路单元进行一系列制造改进。
    • 8. 发明申请
    • Influence-based circuit design
    • 基于影响的电路设计
    • US20070192752A1
    • 2007-08-16
    • US11354425
    • 2006-02-15
    • Subhrajit BhattacharyaAnthony CorrealeNathaniel HieterVeena PureswaranRuchir Puri
    • Subhrajit BhattacharyaAnthony CorrealeNathaniel HieterVeena PureswaranRuchir Puri
    • G06F17/50
    • G06F17/5045G06F2217/08
    • An improved solution for designing a circuit is provided. A set of target paths, each of which has a performance attribute that is targeted for improvement, is obtained from a design for the circuit. An influence for one or more of the nodes in the set of target paths is obtained. One or more of the nodes are selected for improvement using the influence. Subsequently, the performance attribute for each selected node is improved. For example, an implementation of the node can be replaced with an implementation having an improved performance attribute. The relative improvement provided by an alternative implementation versus a relative detriment to another performance attribute can be obtained and used in selecting the node(s) for improvement. In one embodiment, the relative improvement and influence are used to obtain a sensitivity metric for each alternative implementation, which is used in selecting the node(s) for improvement. In this manner, the circuit can be improved in a more effective manner.
    • 提供了一种改进的设计电路解决方案。 从电路的设计中获得一组目标路径,每个目标路径具有旨在改进的性能属性。 获得对目标路径集中的一个或多个节点的影响。 选择一个或多个节点用于使用影响进行改进。 随后,提高了每个选定节点的性能属性。 例如,可以用具有改进的性能属性的实现来替换节点的实现。 可以获得替代实现提供的相对改进与对另一性能属性的相对损害,并用于选择节点以进行改进。 在一个实施例中,使用相对改进和影响来获得用于选择节点以进行改进的每个备选实现的灵敏度度量。 以这种方式,可以以更有效的方式改善电路。
    • 9. 发明申请
    • Methods and apparatuses for creating integrated circuit capacitance from gate array structures
    • 从门阵列结构产生集成电路电容的方法和装置
    • US20070170553A1
    • 2007-07-26
    • US11337010
    • 2006-01-20
    • Anthony CorrealeBenjamin BowersDouglass LambNishith Rohatgi
    • Anthony CorrealeBenjamin BowersDouglass LambNishith Rohatgi
    • H01L23/62
    • H01L27/11807H01L27/0207H01L27/11898H01L28/40
    • Methods and apparatuses for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise a method of placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.
    • 公开了在集成电路中使用门阵列来形成电容结构的方法和装置。 实施例包括将P型场效应晶体管(P-fets)和N型场效应晶体管(N-fets)的栅极阵列放置在集成电路设计中的方法,将一个或多个P-fets的漏极和源极 以及用于一个或多个N-fets的门到电源地,以及将一个或多个P-fets的栅极和用于一个或多个N-fets的漏极和源耦合到电源的正电压。 在一些实施例中,通过将一个或多个P-fets和一个或多个N-fets分别偏置到正电压和地电位,P-fets和N-fets的电容式设备的源极到漏极泄漏电流被最小化。 在其他实施例中,可以使用可熔元件实现电容结构,以在短路的情况下隔离电容结构。