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1. 发明申请

US20070261636A1 RECIRCULATION AND REUSE OF DUMMY DISPENSED RESIST 有权
标题翻译：回收和再利用DUMMY DISPEDED RESIST
公开(公告)号：US20070261636A1
公开(公告)日：2007-11-15
申请号：US11615080
申请日：2006-12-22
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi Phan , Ursula Quinto , Michael Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi Phan , Ursula Quinto , Michael Templeton
IPC分类号： B05B1/28
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译：本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。虚拟分配的抗蚀剂返回到被采集的储存器。在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。来自分配头的抗蚀剂的流动在分配头保持抗干燥。通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

2. 发明授权

US07224456B1 In-situ defect monitor and control system for immersion medium in immersion lithography 有权
标题翻译：浸没式光刻浸渍介质的原位缺陷监测和控制系统
公开(公告)号：US07224456B1
公开(公告)日：2007-05-29
申请号：US10858759
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N15/02
CPC分类号： G01N21/47 , G01N2015/0011 , G03F7/70341
摘要： A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.
摘要翻译：提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。反射和/或衍射光束被一个或多个光学检测器接收。可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。过程控制部件与定位部件和光学曝光部件相互作用，以至少部分地基于散射测量的结果来改变光刻工艺。

3. 发明授权

US07251033B1 In-situ reticle contamination detection system at exposure wavelength 有权
标题翻译：曝光波长处原位标线污染检测系统
公开(公告)号：US07251033B1
公开(公告)日：2007-07-31
申请号：US10858757
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N21/00
CPC分类号： G01N21/94 , G01N2021/95676 , G03F1/84 , G03F7/70916
摘要： A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by contaminants or other defects.
摘要翻译：提供了一种系统和方法来现场检测标线上的污染物或缺陷。该系统和方法提供一种系统，其通过掩模版上的清晰区域测量光学透射，并确定掩模版的光学传输是否已被污染物或其他缺陷降解。

4. 发明申请

US20050164133A1 Inverse resist coating process 有权
标题翻译：抗反射涂层工艺
公开(公告)号：US20050164133A1
公开(公告)日：2005-07-28
申请号：US11087011
申请日：2005-03-22
申请人： Bharath Rangarajan , Michael Templeton , Ramkumar Subramanian
发明人： Bharath Rangarajan , Michael Templeton , Ramkumar Subramanian
IPC分类号： G03F7/40 , H01L21/027 , H01L21/033 , G03F7/00
CPC分类号： H01L21/0331 , G03F7/40 , H01L21/0272 , H01L21/0274
摘要： The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.
摘要翻译：本发明提供了形成图案化的第一涂层的逆（照相负）的系统和工艺。图案化的第一涂层通常由抗蚀剂提供。在对第一涂层进行图案化之后，在其上提供第二材料的涂层。在适当的情况下去除第二涂层的最上层以暴露图案化的第一涂层。随后去除图案化的第一涂层，留下作为第一涂层图案的相反图案的图案形式的第二涂层材料。可以用第三涂层材料重复该过程，以以不同的材料再现第一涂层的图案。在施加第二涂层之前，可以通过蚀刻修整图案化的第一涂层，从而减小特征尺寸并产生亚光刻特征。除了提供亚光刻特征之外，本发明还提供了一种简单，有效和高保真的获得反涂层图案的方法。

5. 发明授权

US07158896B1 Real time immersion medium control using scatterometry 失效
标题翻译：实时浸入介质控制采用散射法
公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。已知的光栅结构被构建在衬底上。实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。

6. 发明授权

US07153364B1 Re-circulation and reuse of dummy-dispensed resist 失效
标题翻译：虚拟分配抗蚀剂的再循环和再利用
公开(公告)号：US07153364B1
公开(公告)日：2006-12-26
申请号：US10000208
申请日：2001-10-23
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
IPC分类号： B05B1/28 , B05B15/04 , B05B3/00
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译：本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。虚拟分配的抗蚀剂返回到被采集的储存器。在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。来自分配头的抗蚀剂的流动在分配头保持抗干燥。通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

7. 发明授权

US07078348B1 Dual layer patterning scheme to make dual damascene 失效
标题翻译：双层图案方案制作双镶嵌
公开(公告)号：US07078348B1
公开(公告)日：2006-07-18
申请号：US09893188
申请日：2001-06-27
申请人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton
发明人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/76807 , H01L21/76811 , H01L21/76813
摘要： One aspect of the present invention relates to a method for making a dual damascene pattern in an insulative layer in a single etch process involving providing a wafer having at least one insulative layer formed thereon; depositing a first photoresist layer over the at least one insulative layer; patterning a first image into the first photoresist layer; curing the first patterned photoresist layer; depositing a second photoresist layer over the first patterned photoresist layer; patterning a second image into the second photoresist layer; and etching the at least one insulative layer through the first patterned photoresist layer and the second patterned photoresist layer simultaneously in the single etch process.
摘要翻译：本发明的一个方面涉及在单一蚀刻工艺中在绝缘层中制造双镶嵌图案的方法，该方法包括提供其上形成有至少一个绝缘层的晶片; 在所述至少一个绝缘层上沉积第一光致抗蚀剂层; 将第一图像图案化成第一光致抗蚀剂层; 固化第一图案化光致抗蚀剂层; 在所述第一图案化光致抗蚀剂层上沉积第二光致抗蚀剂层; 将第二图像图案化成第二光致抗蚀剂层; 以及在单次蚀刻工艺中同时蚀刻通过第一图案化光致抗蚀剂层和第二图案化光致抗蚀剂层的至少一个绝缘层。

8. 发明授权

US07052575B1 System and method for active control of etch process 有权
标题翻译：用于主动控制蚀刻工艺的系统和方法
公开(公告)号：US07052575B1
公开(公告)日：2006-05-30
申请号：US09845454
申请日：2001-04-30
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： C23F1/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67063 , H01L22/34
摘要： A system for regulating an etch process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the acceptability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor selectively controls the etching devices to regulate etching of the portions of the wafer.
摘要翻译：提供了一种用于调节蚀刻工艺的系统。该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个特征和/或光栅。从特征和/或光栅反射的光由测量系统收集，该系统处理收集的光。所收集的光指示在晶片的相应部分处获得的尺寸。测量系统向处理器提供蚀刻相关数据，该处理器确定晶片的相应部分的蚀刻的可接受性。该系统还包括一个或多个蚀刻装置，每个这样的装置对应于晶片的一部分并提供其蚀刻。处理器选择性地控制蚀刻装置来调节晶片的部分的蚀刻。

9. 发明授权

US06931618B1 Feed forward process control using scatterometry for reticle fabrication 有权
标题翻译：使用分光镜制作的散射法进行前馈过程控制
公开(公告)号：US06931618B1
公开(公告)日：2005-08-16
申请号：US10050472
申请日：2002-01-16
申请人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01B9/00 , G03F1/00 , G06F17/50 , G03H9/00
CPC分类号： G03F1/84 , G03F1/00
摘要： A system for selectively generating and feeding forward reticle fabrication data is provided. The system includes components for fabricating a reticle and a control system operatively connected to the fabricating components, where the control system can control the operation of the fabricating components. The control system bases its control of the fabricating components, at least in part, on feed forward control information generated by a processor that analyzes scatterometry based reticle fabrication data gathered from measurement components. The scatterometry data is compared to data stored in a signature data store that facilitates analyzing gathered scatterometry signatures to produce feed forward control information that can be employed to manipulate subsequent reticle fabrication processes and/or apparatus.
摘要翻译：提供了一种用于选择性地生成和馈送标线制造数据的系统。该系统包括用于制造掩模版的部件和可操作地连接到制造部件的控制系统，其中控制系统可以控制制造部件的操作。控制系统至少部分地基于由分析从测量部件收集的基于散射仪的掩模版制造数据的处理器生成的前馈控制信息的制造部件的控制。将散射测量数据与存储在签名数据存储器中的数据进行比较，其有助于分析所收集的散射光标签以产生可用于操纵随后的标线制造工艺和/或设备的前馈控制信息。

10. 发明授权

US06912438B2 Using scatterometry to obtain measurements of in circuit structures 失效
标题翻译：使用散射法获得电路结构的测量
公开(公告)号：US06912438B2
公开(公告)日：2005-06-28
申请号：US10277016
申请日：2002-10-21
申请人： Bryan K. Choo , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Bryan K. Choo , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G01N21/47 , H01L21/66 , G06F19/00
CPC分类号： H01L22/20 , G01N21/4738 , H01L2924/0002 , H01L2924/00
摘要： A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. Measurements are taken in accordance with scatterometry based techniques of repeating in circuit structures that evolve on a wafer as the wafer undergoes the fabrication process. The measurements can be employed to generate feed forward and/or feedback control data that can utilized to selectively adjust one or more fabrication components and/or operating parameters associated therewith to adapt the fabrication process. Additionally, the measurements can be employed in determining whether to discard the wafer or portions thereof based on a cost benefit analysis, for example. Directly measuring in circuit structures mitigates sacrificing valuable chip real estate as test grating structures may not need to be formed within the wafer, and also facilitates control over the elements that actually affect resulting chip performance.
摘要翻译：公开了用于监测和控制半导体制造工艺的系统和方法。根据基于散射法的技术进行测量，该技术在晶片经历制造过程时在晶片上发生的电路结构中重复。可以采用测量来产生可以用于选择性地调整一个或多个制造部件和/或与其相关联的操作参数以适应制造过程的前馈和/或反馈控制数据。另外，例如，可以基于成本效益分析来确定是否丢弃晶片或其部分的测量。在电路结构中的直接测量减轻了牺牲有价值的芯片的不动产，因为测试光栅结构可能不需要在晶片内形成，并且还有助于对实际影响芯片性能的元件的控制。

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