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    • 3. 发明授权
    • Using localized ionizer to reduce electrostatic charge from wafer and mask
    • 使用局部电离器来减少晶片和掩模的静电电荷
    • US06507474B1
    • 2003-01-14
    • US09597126
    • 2000-06-19
    • Bhanwar SinghRamkumar SubramanianKhoi A. PhanBryan K. ChooBharath Rangarajan
    • Bhanwar SinghRamkumar SubramanianKhoi A. PhanBryan K. ChooBharath Rangarajan
    • H01T2300
    • G03F7/70616G03F7/70941
    • One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
    • 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法,包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器,离子发生器产生离子,从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统,其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器,其上具有静电电荷,用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器,耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜,用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。
    • 10. 发明授权
    • Monitor CMP process using scatterometry
    • 使用散点法监测CMP过程
    • US06594024B1
    • 2003-07-15
    • US09886863
    • 2001-06-21
    • Bhanwar SinghRamkumar SubramanianKhoi A. PhanBharath RangarajanCarmen Morales
    • Bhanwar SinghRamkumar SubramanianKhoi A. PhanBharath RangarajanCarmen Morales
    • G01B1128
    • B24B37/005B24B49/12G01N21/47G01N21/9501H01L21/30625
    • One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.
    • 本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统,以便确定包括晶片的CMP工艺端点,其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库,以确定晶片的状态。 另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法,其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。