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    • 3. 发明授权
    • Bandgap reference generator utilizing a current trimming circuit
    • 带隙参考发生器利用电流微调电路
    • US07944280B2
    • 2011-05-17
    • US12198183
    • 2008-08-26
    • Bertrand GabillardPhilippe GirardMichel Rivier
    • Bertrand GabillardPhilippe GirardMichel Rivier
    • G05F1/10G05F3/02
    • G05F3/30
    • A circuit for providing a bandgap voltage. The circuit includes a classic bandgap reference voltage generation circuit including first end second serially connected transistors acting as a current mirror to another portion of the classical bandgap reference circuit and being coupled between a supply voltage Vdd and an output resistor. The circuit also includes a current trimming circuit coupled in parallel with the classical bandgap reference generation circuit including a fixed element portion including a plurality of transistors and a switch portion including a plurality of switches. Each of the plurality of transistors is coupled to the supply voltage Vdd and to a one of the plurality of switches and each switch includes a fuse.
    • 用于提供带隙电压的电路。 该电路包括经典的带隙参考电压产生电路,其包括用作经典带隙基准电路的另一部分的电流镜的第一端第二串联连接的晶体管,并耦合在电源电压Vdd和输出电阻之间。 电路还包括与经典带隙基准产生电路并联耦合的电流微调电路,其包括包括多个晶体管的固定元件部分和包括多个开关的开关部分。 多个晶体管中的每一个耦合到电源电压Vdd和多个开关中的一个,每个开关包括熔丝。
    • 4. 发明授权
    • 2-stage large bandwidth amplifier using diodes in the parallel feedback structure
    • 2级大带宽放大器采用二极管并联反馈结构
    • US06861908B2
    • 2005-03-01
    • US10604478
    • 2003-07-24
    • Bertrand GabillardMichel RivierFabrice VoisinPhilippe Girard
    • Bertrand GabillardMichel RivierFabrice VoisinPhilippe Girard
    • H03F3/343H03F3/68
    • H03F3/3432
    • There is disclosed an improved 2-stage large bandwidth amplifier (20) comprised of two stages formed by first and second bipolar transistors (Q1,Q2) configured in common emitter that are connected in series with their emitters connected to a first supply voltage (Gnd). The input signal (Vin) is applied to the base of said first transistor via an input terminal (11), while the output signal (Vout) is available at an output terminal (12) connected to the collector of said second transistor. A parallel feedback structure (13′) is provided. It consists, in a first branch, of two diodes (D1,D2) in series connected between a second supply voltage (Vcc) and the collector of the second bipolar transistor, and in another branch of a third bipolar transistor (Q3) configured in emitter follower with a resistor (Rf) in the emitter. The base and the collector of said third bipolar transistor are respectively connected to the common node of said diodes and to said second supply voltage. The resistor is connected to the common node of said first and second transistors to inject the feedback signal (Vf). Because, the two bodies have a low internal resistance and reduce the collector capacitance of the second transistor, the overall bandwidth of the improved amplifier is significantly extended in the very high frequencies (e.g. 20 GHz and above).
    • 公开了一种改进的2级大带宽放大器(20),包括由配置在共发射极中的第一和第二双极晶体管(Q1,Q2)形成的两级,它们与连接到第一电源电压(Gnd )。 输入信号(Vin)经由输入端子(11)施加到所述第一晶体管的基极,而输出信号(Vout)在连接到所述第二晶体管的集电极的输出端子(12)处可用。 提供并行反馈结构(13')。 它包括在第一分支中串联连接在第二电源电压(Vcc)和第二双极晶体管的集电极之间的两个二极管(D1,D2),以及在第三分支中配置的第三双极晶体管 射极跟随器在发射极中具有电阻(Rf)。 所述第三双极晶体管的基极和集电极分别连接到所述二极管的公共节点和所述第二电源电压。 电阻器连接到所述第一和第二晶体管的公共节点以注入反馈信号(Vf)。 因为这两个机体具有较低的内部电阻并且降低了第二晶体管的集电极电容,所以改进的放大器的总带宽在非常高的频率(例如20GHz及以上)中被显着地扩展。
    • 5. 发明授权
    • Decoder circuit for a static random access memory
    • 用于静态随机存取存储器的解码器电路
    • US4644189A
    • 1987-02-17
    • US649453
    • 1984-09-11
    • Bertrand Gabillard
    • Bertrand Gabillard
    • G11C11/413G11C11/418H01L27/10H03K19/094G11C8/00H03K19/017
    • G11C11/418
    • A decoder circuit for a static random access memory cell and which may be integrated in monolithic form using gallium arsenide field effect transistors. The circuit comprises a first logic NOR-gate P.sub.1 having (n+1) inputs on which the n coded memory address signals or their complements are received, and also the chip-enable selection signal SB. The gate P.sub.1 is connected by a load resistor R to a supply voltage V.sub.DD1. A second NOR-gate P.sub.2 receives the same inputs as the gate P.sub.1 and has as its load a transistor T.sub.0 the gate electrode of which receives the output of the gate P.sub.1 and the drain of which is connected to a power supply voltage V.sub.DD2 which is less than V.sub.DD1. The voltage V.sub.DD2 is also the supply voltage for the memory cell, and is set at the clipping value of the gate junctions of the constituent transistors of that cell. The output V.sub.S of the decoder is produced at the drains of the transistors forming the second NOR-gate P.sub.2 which are connected to the source electrode of the load transistor T.sub.0. The inputs of the NOR-gates receive a chip-enable selection signal SB after application of the n coded memory address signals, thereby achieving reduced access time for the memory cell.
    • 一种用于静态随机存取存储器单元的解码器电路,其可以使用砷化镓场效应晶体管集成在单片形式中。 电路包括具有(n + 1)个输入的第一逻辑NOR门P1,其上接收了n个编码存储器地址信号或其补码,以及芯片使能选择信号SB。 门P1通过负载电阻R连接到电源电压VDD1。 第二NOR门P2接收与栅极P1相同的输入,并且具有作为其负载的晶体管T0,其栅电极接收栅极P1的输出,其漏极连接到较小的电源电压VDD2 比VDD1。 电压VDD2也是存储单元的电源电压,并且被设置在该单元的构成晶体管的栅极结的削波值。 解码器的输出VS在形成与负载晶体管T0的源极连接的第二NOR-门P2的晶体管的漏极处产生。 NOR门的输入在施加n个编码存储器地址信号之后接收芯片使能选择信号SB,从而实现存储单元的访问时间减少。
    • 7. 发明授权
    • Integrated memory circuit having a differential read amplifier
    • 具有差分读出放大器的集成存储器电路
    • US4831588A
    • 1989-05-16
    • US136576
    • 1987-12-22
    • Thierry DucourantBertrand Gabillard
    • Thierry DucourantBertrand Gabillard
    • G11C11/41G11C7/06G11C11/419
    • G11C11/419G11C7/062
    • A monolithic integrated memory includes a differential read amplifier circuit which is associated with a column of the memory and which has two source-coupled field effect transistors, the coupling point of which is controlled by a current source which itself is controlled by the output signal of a decoder stage which enables the selection of the memory column. The gate of each coupled transistor receives the signal of a bit line of the memory column, while the drains of the coupled transistors apply a signal to the read bus of the memory. A translator circuit is provided for translating the levels of the signals transported by the bit lines in order to ensure that these levels are at most equal to the levels of the signals transported by the read bus, so that the gate-drain capacitances of the coupled transistors of the differential amplifier are negligibly small.
    • 单片集成存储器包括差分读取放大器电路,其与存储器的列相关联,并且具有两个源耦合场效应晶体管,其耦合点由电流源控制,电流源本身由输出信号 解码器级,其使得能够选择存储器列。 每个耦合晶体管的栅极接收存储器列的位线的信号,而耦合晶体管的漏极将信号施加到存储器的读总线。 提供了一个转换器电路,用于平移由位线传送的信号的电平,以便确保这些电平最多等于由读总线传送的信号的电平,使得耦合的栅极 - 漏极电容 差分放大器的晶体管可忽略不计。
    • 8. 发明申请
    • BANDGAP REFERENCE GENERATOR UTILIZING A CURRENT TRIMMING CIRCUIT
    • 带电参考发生器利用电流调制电路
    • US20090289697A1
    • 2009-11-26
    • US12198183
    • 2008-08-26
    • Bertrand GabillardPhilippe GirardMichel Rivier
    • Bertrand GabillardPhilippe GirardMichel Rivier
    • G05F1/10
    • G05F3/30
    • A circuit for providing a bandgap voltage. The circuit includes a classic bandgap reference voltage generation circuit including first end second serially connected transistors acting as a current mirror to another portion of the classical bandgap reference circuit and being coupled between a supply voltage Vdd and an output resistor. The circuit also includes a current trimming circuit coupled in parallel with the classical bandgap reference generation circuit including a fixed element portion including a plurality of transistors and a switch portion including a plurality of switches. Each of the plurality of transistors is coupled to the supply voltage Vdd and to a one of the plurality of switches and each switch includes a fuse.
    • 用于提供带隙电压的电路。 该电路包括经典的带隙参考电压产生电路,其包括用作电流镜的第一端第二串联连接的晶体管,并经耦合在电源电压Vdd和输出电阻之间。 电路还包括与经典带隙基准产生电路并联耦合的电流微调电路,其包括包括多个晶体管的固定元件部分和包括多个开关的开关部分。 多个晶体管中的每一个耦合到电源电压Vdd和多个开关中的一个,每个开关包括熔丝。
    • 9. 发明授权
    • Differential amplifier with DC offset cancellation
    • 具有直流偏移消除的差分放大器
    • US06914479B1
    • 2005-07-05
    • US10604479
    • 2003-07-24
    • Bertrand GabillardMichel RivierFabrice VoisinPhilippe Girard
    • Bertrand GabillardMichel RivierFabrice VoisinPhilippe Girard
    • H03F3/45
    • H03F3/45475H03F3/45278H03F3/45973H03F2203/45521H03F2203/45652
    • There is disclosed an improved differential amplifier (20) having a feedback loop that generates an amplified output signal (Vout) from an input signal (Vin) supplied by a preceding stage. It comprises an input matching circuit (11) connected to said preceding stage, a buffer (22) and an amplification section (12) connected in series in the direct amplification line, a first amplifier (16), a RC network (17′) and a second amplifier (23) connected in series in a parallel loop between the outputs and the inputs of the amplification section that generate the feedback signal. The role of said buffer and second amplifier associated in a dedicated direct and feedback signal combining block (21) is to respectively isolate the input signal and the feedback signal from the summing nodes (A′,B′) at the amplification section inputs. As a result, the summation of the input signal and the feedback signal is improved, the DC component of the output signal is filtered out in order to significantly reduce the DC offset. In addition, the input impedance matching represented by parameter S11 is considerably improved.
    • 公开了一种具有反馈回路的改进的差分放大器(20),该反馈回路从由前一级提供的输入信号(Vin)产生放大的输出信号(Vout)。 它包括连接到所述前级的输入匹配电路(11),串联连接在直接放大线路中的缓冲器(22)和放大部分(12),第一放大器(16),RC网络(17') 以及在产生反馈信号的输出与放大部分的输入之间并联连接的第二放大器(23)。 在专用直接和反馈信号组合块(21)中相关联的所述缓冲器和第二放大器的作用是在放大部分输入端分别隔离来自求和节点(A',B')的输入信号和反馈信号。 结果,改善了输入信号和反馈信号的总和,输出信号的直流分量被滤除,以便显着减小直流偏移。 此外,由参数S 11表示的输入阻抗匹配得到显着改善。