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1. 发明申请

US20080173863A1 Radiation-emitting body and method for producing a radiation-emitting body 有权
标题翻译：辐射发射体及其辐射发射体的制造方法
公开(公告)号：US20080173863A1
公开(公告)日：2008-07-24
申请号：US11786887
申请日：2007-04-13
申请人： Berthold Hahn , Volker Harle , Reiner Windisch
发明人： Berthold Hahn , Volker Harle , Reiner Windisch
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
摘要翻译：一种辐射发射体，包括具有用于产生电磁辐射的有源区的层序列，用于耦合所产生的辐射的耦合出层，所述耦合出层被布置在所述层序列的第一侧上，所述反射层用于反射所产生的辐射，所述反射层布置在与第一侧相对的第二侧上，并且层序列的面向反射层的界面并且具有突出结构元件的横向图案化，其中反射层连接到层序列，使得反射层具有对应于界面的图案化的图案。此外还规定了用于制造辐射发射体的方法。

2. 发明授权

US08476643B2 Radiation-emitting body and method for producing a radiation-emitting body 有权
标题翻译：辐射发射体及其辐射发射体的制造方法
公开(公告)号：US08476643B2
公开(公告)日：2013-07-02
申请号：US11786887
申请日：2007-04-13
申请人： Berthold Hahn , Volker Härle , Reiner Windisch
发明人： Berthold Hahn , Volker Härle , Reiner Windisch
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
摘要翻译：一种辐射发射体，包括具有用于产生电磁辐射的有源区的层序列，用于耦合所产生的辐射的耦合出层，所述耦合出层被布置在所述层序列的第一侧上，所述反射层用于反射所产生的辐射，所述反射层布置在与第一侧相对的第二侧上，并且层序列的面向反射层的界面并且具有突出结构元件的横向图案化，其中反射层连接到层序列，使得反射层具有对应于界面的图案化的图案。此外还规定了用于制造辐射发射体的方法。

3. 发明授权

US08877529B2 Radiation-emitting body and method for producing a radiation-emitting body 有权
标题翻译：辐射发射体及其辐射发射体的制造方法
公开(公告)号：US08877529B2
公开(公告)日：2014-11-04
申请号：US13415627
申请日：2012-03-08
申请人： Berthold Hahn , Volker Härle , Reiner Windisch
发明人： Berthold Hahn , Volker Härle , Reiner Windisch
IPC分类号： H01L21/00 , H01L33/22 , H01L33/46 , H01L33/40 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
摘要翻译：一种辐射发射体，包括具有用于产生电磁辐射的有源区的层序列，用于耦合所产生的辐射的耦合出层，所述耦合出层被布置在所述层序列的第一侧上，所述反射层用于反射所产生的辐射，所述反射层布置在与第一侧相对的第二侧上，并且层序列的面向反射层的界面并且具有突出结构元件的横向图案化，其中反射层连接到层序列，使得反射层具有对应于界面的图案化的图案。此外还规定了用于制造辐射发射体的方法。

4. 发明授权

US08658447B2 Radiation-emitting body and method for producing a radiation-emitting body 有权
公开(公告)号：US08658447B2
公开(公告)日：2014-02-25
申请号：US13415627
申请日：2012-03-08
申请人： Berthold Hahn , Volker Härle , Reiner Windisch
发明人： Berthold Hahn , Volker Härle , Reiner Windisch
IPC分类号： H01L21/00
摘要： A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

5. 发明申请

US20080179380A1 RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR COMPONENT 有权
标题翻译：辐射发射半导体元件和用于制造半导体元件的方法
公开(公告)号：US20080179380A1
公开(公告)日：2008-07-31
申请号：US11567977
申请日：2006-12-07
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
IPC分类号： A47J36/02
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
摘要翻译：辐射发射半导体组件具有改进的辐射效率。半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。多层结构邻接窗口的第一主表面。为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

6. 发明申请

US20080093611A1 Method for Production of a Radiation-Emitting Semiconductor Chip 有权
标题翻译：辐射发射半导体芯片的制造方法
公开(公告)号：US20080093611A1
公开(公告)日：2008-04-24
申请号：US11579194
申请日：2004-04-29
申请人： Berthold Hahn , Stephan Kaiser , Volker Harle
发明人： Berthold Hahn , Stephan Kaiser , Volker Harle
IPC分类号： H01L21/04 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.
摘要翻译：一种用于对薄膜发光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。半导体层序列在衬底上生长。在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。根据这种方法制造半导体芯片。

7. 发明申请

US20070278508A1 Thin Film Led Comprising a Current-Dispersing Structure 有权
标题翻译：包含电流分散结构的薄膜引线
公开(公告)号：US20070278508A1
公开(公告)日：2007-12-06
申请号：US10587666
申请日：2005-01-25
申请人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
发明人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译：一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

8. 发明申请

US20060289854A1 OPTICAL SEMICONDUCTOR DEVICE WITH MULTIPLE QUANTUM WELL STRUCTURE 有权
标题翻译：具有多个量子阱结构的光学半导体器件
公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

9. 发明申请

US20080203410A1 Methods for the Production of Luminescent Diode Chips and Luminescent Diode Chip 审中-公开
标题翻译：发光二极管芯片和发光二极管芯片的制造方法
公开(公告)号：US20080203410A1
公开(公告)日：2008-08-28
申请号：US11576057
申请日：2005-08-04
申请人： Herbert Brunner , Dieter Eissler , Berthold Hahn , Volker Harle , Harald Jager , Gertrud Krauter , Gunter Waitl
发明人： Herbert Brunner , Dieter Eissler , Berthold Hahn , Volker Harle , Harald Jager , Gertrud Krauter , Gunter Waitl
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L2933/0041
摘要： The invention relates to a method of making LED chips provided with a luminescence conversion material containing at least one phosphor. In the method, a layer composite is prepared that includes an LED layer sequence for a multiplicity of LED chips and comprises on a main surface at least one electrical contact surface for each LED chip, for electrically connecting said chip. A layer of adhesion promoter is applied to the main surface and selectively removed from at least portions of the contact surfaces. At least one phosphor is then applied to the main surface. Alternatively, a luminescence conversion material is applied to the main surface and selectively removed from at least portions of the contact surfaces. The invention also relates to an LED chip provided with a luminescence conversion material.
摘要翻译：本发明涉及制造具有含有至少一种荧光体的发光转换材料的LED芯片的方法。在该方法中，制备层复合物，其包括用于多个LED芯片的LED层序列，并且在主表面上包括用于每个LED芯片的至少一个电接触表面，用于电连接所述芯片。将一层粘合促进剂施加到主表面并且从至少部分接触表面选择性地除去。然后将至少一种荧光体施加到主表面。或者，将发光转换材料施加到主表面并且从至少部分接触表面选择性地去除。本发明还涉及具有发光转换材料的LED芯片。

10. 发明申请

US20070205525A1 Method for producing structures in optoelectronic components and device for this purpose 有权
标题翻译：用于生产光电元件结构的方法和用于此目的的器件
公开(公告)号：US20070205525A1
公开(公告)日：2007-09-06
申请号：US11707589
申请日：2007-02-15
申请人： Karl Engl , Berthold Hahn , Volker Harle
发明人： Karl Engl , Berthold Hahn , Volker Harle
IPC分类号： B29D11/00
CPC分类号： B29D11/00278 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0005 , G03F7/2035 , H01L31/0232 , H01L33/22
摘要： A method for producing structures (5) on a multiplicity of optoelectronic components (1), wherein the multiplicity of optoelectronic components (1) are arranged on an auxiliary carrier (10) and the structures (5) are produced by carrying out a movement of a first roller (15) relative to the auxiliary carrier (10) and producing the structures (5) in the process by means of exerting a pressure between the first roller (15) and the auxiliary carrier (10).
摘要翻译：一种用于在多个光电子部件（1）上制造结构（5）的方法，其中所述多个光电子部件（1）布置在辅助载体（10）上，并且所述结构（5）通过执行相对于辅助载体（10）的第一辊（15），并且通过在第一辊（15）和辅助载体（10）之间施加压力来在该过程中产生结构（5）。

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