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1. 发明申请

US20090107955A1 OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
标题翻译：用于室内休闲的偏心衬里
公开(公告)号：US20090107955A1
公开(公告)日：2009-04-30
申请号：US12205414
申请日：2008-09-05
申请人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
发明人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
IPC分类号： B44C1/22 , C23C16/455 , C23C16/44 , C23F1/08
CPC分类号： H01J37/32357 , C23C16/4404 , H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要翻译：本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

2. 发明申请

US20090283039A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：US20090283039A1
公开(公告)日：2009-11-19
申请号：US12467477
申请日：2009-05-18
申请人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： C23C16/54 , F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

3. 发明申请

US20130140009A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
公开(公告)号：US20130140009A1
公开(公告)日：2013-06-06
申请号：US13722637
申请日：2012-12-20
申请人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

4. 发明授权

US08430961B2 Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US08430961B2
公开(公告)日：2013-04-30
申请号：US12205363
申请日：2008-09-05
申请人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

5. 发明申请

US20090064934A1 SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US20090064934A1
公开(公告)日：2009-03-12
申请号：US12205363
申请日：2008-09-05
申请人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/513
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

6. 发明申请

US20100151688A1 METHOD TO PREVENT THIN SPOT IN LARGE SIZE SYSTEM 审中-公开
标题翻译：在大型系统中防止漏点的方法
公开(公告)号：US20100151688A1
公开(公告)日：2010-06-17
申请号：US12634921
申请日：2009-12-10
申请人： Young Jin Choi , Gaku Furuta , Soo Young Choi , Beom Soo Park
发明人： Young Jin Choi , Gaku Furuta , Soo Young Choi , Beom Soo Park
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： C23C16/4583 , C23C16/505 , H01J37/32091 , H01J37/32733 , H01L21/68742
摘要： Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.
摘要翻译：本文公开的实施例通常包括确保在基底上均匀沉积的方法。衬底的一部分和衬底支撑物之间的最小间隙可能导致材料的不均匀沉积或衬底上的“薄点”。由于其大尺寸，大面积基板在随机位置易受许多间隙的影响。通过在将衬底放置在衬底支撑件上之前在衬底上引起静电电荷，衬底可以放置在与衬底支撑件相对齐齐的位置。衬底上的静电电荷在衬底和衬底支撑件之间产生吸引力，以基本上将衬底的整个表面拉到与衬底支撑件接触。然后可以将材料基本均匀地沉积在衬底上，同时减少“薄点”。

7. 发明授权

US09449809B2 Interface adhesion improvement method 有权
标题翻译：界面附着力改进方法
公开(公告)号：US09449809B2
公开(公告)日：2016-09-20
申请号：US13947032
申请日：2013-07-20
申请人： Young Jin Choi , Jrjyan Jerry Chen , Beom Soo Park , Soo Young Choi
发明人： Young Jin Choi , Jrjyan Jerry Chen , Beom Soo Park , Soo Young Choi
IPC分类号： H01L21/02 , C23C16/30 , H01L51/00 , H01L51/52
CPC分类号： H01L21/02107 , C23C16/308 , H01L51/0096 , H01L51/5253 , Y02E10/549
摘要： The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.
摘要翻译：本公开描述了在用于OLED或薄膜晶体管应用的透明基板上使用的界面粘附改进方法的方法。在一个实施例中，在衬底的表面上形成缓冲层的方法包括在处理室中提供其上设置有平坦化材料的衬底，将包含含硅气体的缓冲层气体混合物供应到处理室中，衬底温度低于约100摄氏度，在平坦化材料上形成缓冲层，向处理室中提供包含含硅气体和含氮气体的封装阻挡层沉积气体混合物，并在缓冲层上形成封装阻挡层层。

8. 发明申请

US20130087783A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 有权
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：US20130087783A1
公开(公告)日：2013-04-11
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L21/316 , H01L21/31 , H01L29/786
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

9. 发明授权

US09287137B2 Methods for depositing a silicon containing layer with argon gas dilution 有权
标题翻译：用氩气稀释沉积含硅层的方法
公开(公告)号：US09287137B2
公开(公告)日：2016-03-15
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L29/10 , H01L29/12 , H01L21/316 , H01L29/786 , H01L21/31 , H01L21/02 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/505 , C23C16/56 , H01L29/66 , H01L21/77
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

10. 发明授权

US11351219B1 Functional food composition for improving muscular endurance and relieving fatigue 有权
公开(公告)号：US11351219B1
公开(公告)日：2022-06-07
申请号：US17540758
申请日：2021-12-02
申请人： Young Jin Choi
发明人： Young Jin Choi
IPC分类号： A61K36/65 , A61K36/481 , A61K36/346 , A61K36/234 , A61K35/32 , A61K36/232
摘要： The present disclosure relates to a functional food composition for improving muscular endurance and relieving fatigue containing Paeoniae japonica, Astragalus membranaceus, Cnidium officinale, velvet antler and Platycodon grandiflorum. Since the composition contains 6 kinds of herbal medicinal materials, the quality of the composition may be advantageously maintained, and the composition may improve muscular endurance and reduce fatigue by increasing muscle glycogen levels.

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