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1. 发明申请

US20060121192A1 Liquid precursor refill system 审中-公开
标题翻译：液体前体补充系统
公开(公告)号：US20060121192A1
公开(公告)日：2006-06-08
申请号：US11095792
申请日：2005-03-31
申请人： Benjamin Jurcik , Jean-Marc Girard , Guillaume Rameau
发明人： Benjamin Jurcik , Jean-Marc Girard , Guillaume Rameau
IPC分类号： C23C16/00
CPC分类号： C23C16/448
摘要： Liquid precursor refill systems of the type typically used in the semiconductor industry. A remote precursor reservoir and a secondary vapor delivery system provide a CVD precursor to a local source. The local source contains a heat transfer means and a local CVD precursor reservoir. A delivery line connects this remote, secondary vapor delivery system and the local heat transfer means. During the constant or periodic operation, no liquid is present in the delivery line. The local CVD precursor reservoir may serve as an ampoule in a bubbler system, or may provide CVD precursor to an ampoule in a bubbler system.
摘要翻译：通常在半导体工业中使用的液体前体补充系统。远程前体储存器和二次蒸气输送系统为本地源提供CVD前体。本地源包含传热装置和局部CVD前体储存器。输送管线连接该远程二次蒸气输送系统和局部传热装置。在恒定或周期性操作期间，输送管线中不存在液体。局部CVD前体储存器可用作起泡器系统中的安瓿，或者可以在起泡器系统中向安瓿提供CVD前体。

2. 发明申请

US20090263257A1 SYSTEM AND METHOD FOR DELIVERY OF PRECURSOR MATERIAL 审中-公开
标题翻译：用于输送前体材料的系统和方法
公开(公告)号：US20090263257A1
公开(公告)日：2009-10-22
申请号：US12301589
申请日：2007-05-25
申请人： Guillaume Rameau , Valere Laurent , Jean-Marc Girard
发明人： Guillaume Rameau , Valere Laurent , Jean-Marc Girard
IPC分类号： F04F9/00
CPC分类号： B01J4/008 , B01J4/001 , B01J4/002 , B01J19/26 , B01J2219/00094 , B01J2219/00119 , B01J2219/185 , B01J2219/1944 , C23C16/4402 , C23C16/4482 , F28D2021/0022 , F28D2021/0033
摘要： The present invention relates to a method for distributing products, in particular pyrophoric, from a storage point to a use point.According to the invention, an inert gas is bubbled through the product, in particular pyrophoric, to be purified in the liquid state in order to generate a mixture, the mixture is preferably routed close to the use point, the product, in particular pyrophoric, is separated from the inert gas and from some light impurities, to generate a purified final product, in particular pyrophoric, in liquid or solid form. The purified product is supplied in a quantity just necessary to the use point, particularly when it is solidified in the heat exchanger after the transport of the mixture.
摘要翻译：本发明涉及一种从储存点到使用点分配产品，特别是发火的方法。根据本发明，惰性气体鼓泡通过产品，特别是自燃的，以液态纯化，以便产生混合物，该混合物优选地靠近使用点，产物，特别是发火的，与惰性气体和一些轻质杂质分离，以液体或固体形式产生纯化的最终产物，特别是发火的。纯化产物以使用点所需的量提供，特别是在混合物输送之后在热交换器中固化时。

3. 发明申请

US20070190807A1 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US20070190807A1
公开(公告)日：2007-08-16
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

4. 发明授权

US07482286B2 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

5. 发明授权

US10309010B2 Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition 有权
公开(公告)号：US10309010B2
公开(公告)日：2019-06-04
申请号：US14765090
申请日：2014-01-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Satoko Gatineau , Changhee Ko , Jean-Marc Girard , Julien Gatineau
发明人： Satoko Gatineau , Changhee Ko , Jean-Marc Girard , Julien Gatineau
IPC分类号： C23C16/06 , C07F15/06 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/42 , C23C16/455 , C23C16/28 , H01L21/285 , H01L21/768
摘要： Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1≠R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.

6. 发明授权

US08853075B2 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process 有权
标题翻译：使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法
公开(公告)号：US08853075B2
公开(公告)日：2014-10-07
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/4763 , H01J31/12 , H01J29/86
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
摘要翻译：公开了在基底上形成含钛层的方法。在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。

7. 发明授权

US07192626B2 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权
标题翻译：通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法
公开(公告)号：US07192626B2
公开(公告)日：2007-03-20
申请号：US10669623
申请日：2003-09-24
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
IPC分类号： C23C16/34
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译：通过将三甲胺和氨进料到含有基板的CVD反应室中，在基板上形成氮化硅膜。将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室。该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。

8. 发明申请

US20050107627A1 Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof 有权
标题翻译：六烷基（单烃基氨基）二硅烷及其制备方法
公开(公告)号：US20050107627A1
公开(公告)日：2005-05-19
申请号：US10497399
申请日：2002-11-27
申请人： Christian Dussarrat , Jean-Marc Girard
发明人： Christian Dussarrat , Jean-Marc Girard
IPC分类号： C07F7/02 , C07F7/10 , C23C16/34
CPC分类号： C07F7/10
摘要： A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3 (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.
摘要翻译：提供不含氯的硅烷化合物的组合物和制备方法。化合物是具有通式（I）的六（单烃基氨基）二硅烷，其中式（I）<βin-line-formula description =“In-line Formulas”end =“lead”→（（R）HN） -Si-Si-（NH（R））3（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地表示 C 1至C 4烃基。这些二硅烷可以通过使六氯二硅烷在有机溶剂中与至少6倍摩尔的单烃基胺R N H 2（其中R是C 1至C 4）烃基）。这些化合物在低温下具有优异的成膜特性。这些膜，特别是在氮化硅和氮氧化硅的情况下，也具有优异的处理特性。

9. 发明申请

US20050100670A1 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition 有权
标题翻译：通过热化学气相沉积制造氮化硅膜和氧氮化硅膜的方法
公开(公告)号：US20050100670A1
公开(公告)日：2005-05-12
申请号：US10669623
申请日：2003-09-24
申请人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
发明人： Christian Dussarrat , Jean-Marc Girard , Takako Kimura , Naoki Tamaoki , Yuusuke Sato
IPC分类号： C23C16/42 , C23C16/30 , C23C16/34 , H01L21/314 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that contains a substrate (112). The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber (11). This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译：通过将三甲胺和氨进料到含有基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。将氨气/三甲硅烷气体流量比设定为至少约10的值和/或热CVD反应在不高于约600℃的温度下运行。氮氧化硅通过将氧源气体引入 CVD反应室（11）。该方法避免了氯化铵的生成和/或碳质污染物的结合，这对沉积膜的质量是有害的。

10. 发明申请

US20050037627A1 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition 有权
标题翻译：通过化学气相沉积法沉积氮化硅膜和氮氧化硅膜的方法
公开(公告)号：US20050037627A1
公开(公告)日：2005-02-17
申请号：US10497455
申请日：2002-11-27
申请人： Christian Dussarrat , Jean-Marc Girard
发明人： Christian Dussarrat , Jean-Marc Girard
IPC分类号： C23C16/30 , C23C16/34 , C23C16/455 , H01L21/318 , H01L21/469 , H01L21/31
CPC分类号： C23C16/308 , C23C16/345
摘要： (Problem) To provide a method for the production of silicon nitride and silicon oxynitride films by CVD technology, wherein said method provides acceptable film-deposition rates even at lower temperatures and is not accompanied by the production of large amounts of ammonium chloride. (Solution) Use of a hydrocarbylaminodisilane compound with the formula (R0)3—Si—(R0)3 (I) {each R0 is independently selected from the hydrogen atom chlorine atom, and —NR1(R2) groups (wherein R1 and R2 are each independently selected from the hydrogen atom and C1 to C4 hydrocarbyl with the proviso that R1 and R2 may not both be the hydrogen atom) and at least one R0 is the —NR1(R2) group} as a precursor for silicon nitride and silicon oxynitride.
摘要翻译：（问题）提供通过CVD技术制造氮化硅和氮氧化硅膜的方法，其中所述方法即使在较低温度下也提供可接受的膜沉积速率，并且不伴随产生大量的氯化铵。（溶液）使用式（R 0）3-Si-（R 0）3（I）{各R 0独立地选自氢原子氯原子和-NR（R 0））的烃基氨基二硅烷化合物（R 2）基团（其中R 1和R 2各自独立地选自氢原子和C 1至C 4烃基，条件是R 1和R 2不能都是作为氢原子），并且至少一个R 0是-NR 1（R 2）基团）作为氮化硅和氮氧化硅的前体。

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