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JP2008166765A Tft array structure and manufacturing method therefor 审中-公开
标题翻译： TFT阵列结构及其制造方法
公开(公告)号：JP2008166765A
公开(公告)日：2008-07-17
申请号：JP2007326033
申请日：2007-12-18
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： WANG ZHANGTAO , QIU HAIJUN , MIN TAE YUP , RIM SEUNG MOO
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/1214 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a TFT array substrate and a manufacturing method therefor. SOLUTION: The TFT array substrate includes a transparent glass substrate 11, a gate electrode 12a which is covered successively with a gate insulating layer 13, a semiconductor layer 14 and an ohmic contact layer 15 to be integral with a gate line 12b and a gate line 12b, an insulation layer 16, which emerges on both sides of the gate line 12b and the gate electrode 12a, the gate insulation layer 13, the semiconductor layer 14 and the ohmic contact layer 15, a parting groove 15a which is formed in the ohmic contact layer 15, and cuts off the ohmic contact layer 15 above the middle position of the semiconductor layer 14, and a data line and first and second source/drain electrodes which are formed above the insulation layer 16 and the ohmic contact layer 15. The TFT array substrate can be manufactured by four lithographic treatments of a non-slit lithographic craft. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种TFT阵列基板及其制造方法。解决方案：TFT阵列基板包括透明玻璃基板11，栅极电极12a，栅极电极12a依次被栅极绝缘层13，半导体层14和与栅极线12b成一体的欧姆接触层15和栅极线12b，在栅极线12b和栅电极12a的两侧出现的绝缘层16，栅极绝缘层13，半导体层14和欧姆接触层15，形成的分隔槽15a 在欧姆接触层15中，切断半导体层14的中间位置之上的欧姆接触层15，以及形成在绝缘层16和欧姆接触层之上的数据线和第一和第二源极/漏极 TFT阵列基板可以通过非狭缝光刻工艺的四次光刻处理来制造。版权所有（C）2008，JPO＆INPIT

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