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1. 发明专利

JP2008166765A Tft array structure and manufacturing method therefor 审中-公开
标题翻译： TFT阵列结构及其制造方法
公开(公告)号：JP2008166765A
公开(公告)日：2008-07-17
申请号：JP2007326033
申请日：2007-12-18
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： WANG ZHANGTAO , QIU HAIJUN , MIN TAE YUP , RIM SEUNG MOO
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/1214 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a TFT array substrate and a manufacturing method therefor. SOLUTION: The TFT array substrate includes a transparent glass substrate 11, a gate electrode 12a which is covered successively with a gate insulating layer 13, a semiconductor layer 14 and an ohmic contact layer 15 to be integral with a gate line 12b and a gate line 12b, an insulation layer 16, which emerges on both sides of the gate line 12b and the gate electrode 12a, the gate insulation layer 13, the semiconductor layer 14 and the ohmic contact layer 15, a parting groove 15a which is formed in the ohmic contact layer 15, and cuts off the ohmic contact layer 15 above the middle position of the semiconductor layer 14, and a data line and first and second source/drain electrodes which are formed above the insulation layer 16 and the ohmic contact layer 15. The TFT array substrate can be manufactured by four lithographic treatments of a non-slit lithographic craft. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种TFT阵列基板及其制造方法。解决方案：TFT阵列基板包括透明玻璃基板11，栅极电极12a，栅极电极12a依次被栅极绝缘层13，半导体层14和与栅极线12b成一体的欧姆接触层15和栅极线12b，在栅极线12b和栅电极12a的两侧出现的绝缘层16，栅极绝缘层13，半导体层14和欧姆接触层15，形成的分隔槽15a 在欧姆接触层15中，切断半导体层14的中间位置之上的欧姆接触层15，以及形成在绝缘层16和欧姆接触层之上的数据线和第一和第二源极/漏极 TFT阵列基板可以通过非狭缝光刻工艺的四次光刻处理来制造。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008040502A Thin film transistor lcd pixel unit and its manufacturing method 有权
标题翻译：薄膜晶体管液晶像素单元及其制造方法
公开(公告)号：JP2008040502A
公开(公告)日：2008-02-21
申请号：JP2007203388
申请日：2007-08-03
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： QIU HAIJUN , WANG ZHANGTAO , CHEN XU , MIN TAE YUP
IPC分类号： G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1368 , G02F2001/136231 , H01L27/1214
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor (TFT) LCD pixel unit which can reduce requirements on the step tolerance, simplifies the design of a TFT and can be formed only by masking steps of three times, and to provide a manufacturing method of the TFT LCD pixel unit. SOLUTION: In the manufacturing method of the TFT LCD pixel unit, in addition to formation of a first insulating layer (gate insulating layer) and a passivation layer, a second insulating layer is adopted to cover a gate island and an opening part is formed such that a channel region, a source region and a drain region of the TFT are exposed on the gate island. A gray tone masking and photoresist peeling-off steps are utilized to perform patterning and, thereby, the TFT LCD pixel unit can be formed with three photolithography masks. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以降低对步进公差的要求的薄膜晶体管（TFT）LCD像素单元，简化了TFT的设计，并且可以仅通过三次屏蔽步骤形成，并且提供 TFT LCD像素单元的制造方法。解决方案：在TFT LCD像素单元的制造方法中，除了形成第一绝缘层（栅极绝缘层）和钝化层之外，还采用第二绝缘层来覆盖栅极岛和开口部形成为使得栅极岛上的TFT的沟道区域，源极区域和漏极区域露出。利用灰色掩蔽和光刻胶剥离步骤进行图案化，由此可以用三个光刻掩模形成TFT LCD像素单元。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008122968A Pixel structure of liquid crystal display of thin film transistor and fabricating method for the same 有权
标题翻译：薄膜晶体管液晶显示器的像素结构及其制作方法
公开(公告)号：JP2008122968A
公开(公告)日：2008-05-29
申请号：JP2007293686
申请日：2007-11-12
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： QIU HAIJUN , WANG ZHANGTAO , MIN TAE YUP
IPC分类号： G02F1/1368 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L23/522 , H01L29/786
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a pixel structure of a thin film transistor LCD and a method for fabricating the structure, to reduce the cost of an array forming step and the time of using equipment, and to improve the productivity by forming a thin film transistor through three-times resist masking. SOLUTION: The pixel structure includes: a gate line and a gate electrode formed on a substrate; a first gate insulating layer, an active layer and a doped layer (DL) formed on the gate line and the gate electrode; and a data line, a first source/drain electrode and a second source/drain electrode formed on the doped layer. The first source/drain electrode is spaced from the second source/drain electrode, while the data line is connected to the first source/drain electrode. A cut-off groove to cut-off the DL and the active layer above is formed in the gate line; a second insulating layer is disposed to cover the cut-off groove and the glass substrate except for the gate line and the gate electrode; a pixel electrode is formed on the second insulating layer to be integrated with the second source/drain electrode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供薄膜晶体管LCD的像素结构和制造该结构的方法，为了降低阵列形成步骤的成本和使用设备的时间，并且通过形成来提高生产率通过三次抗蚀剂掩模的薄膜晶体管。解决方案：像素结构包括：栅极线和形成在衬底上的栅电极; 形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层（DL）; 以及形成在掺杂层上的数据线，第一源极/漏极和第二源极/漏极。第一源极/漏极电极与第二源极/漏极电极隔开，而数据线连接到第一源极/漏极电极。在栅极线上形成用于切断DL和上述有源层的截止槽; 第二绝缘层设置成覆盖除栅极线和栅电极之外的切除槽和玻璃基板; 像素电极形成在第二绝缘层上以与第二源极/漏极电极集成。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2010217893A Horizontal electric field type liquid crystal display and method of manufacturing the same 有权
标题翻译：水平电场型液晶显示器及其制造方法
公开(公告)号：JP2010217893A
公开(公告)日：2010-09-30
申请号：JP2010057532
申请日：2010-03-15
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： MIN TAE YUP , PEI YANG , WANG JING , GAO WENBAO
IPC分类号： G02F1/1368
CPC分类号： G02F1/13394 , G02F1/134363 , G02F2001/13398
摘要： PROBLEM TO BE SOLVED: To provide a horizontal electric field type liquid crystal display device which is improved in aperture ratio. SOLUTION: The embodiments of the present invention relate to a horizontal electric field type liquid crystal display device and a method of manufacturing the same. The horizontal electric field type liquid crystal display device comprises a first substrate, a second substrate, a liquid crystal layer sandwiched between the first substrate and the second substrate, and a spacer disposed between the first and the second substrates. The first substrate comprises a plurality of thin film transistors, and a gate line and a data line for driving the plurality of thin film transistors. The second substrate comprises a plurality of picture electrodes and a common electrode corresponding to the picture electrodes and forming a horizontal electric field. The spacer is a conductive spacer electrically connecting each picture electrode on the first substrate to the corresponding thin film transistor on the second substrate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高孔径比的水平电场型液晶显示装置。解决方案：本发明的实施例涉及一种水平电场型液晶显示装置及其制造方法。水平电场型液晶显示装置包括第一基板，第二基板，夹在第一基板和第二基板之间的液晶层和设置在第一和第二基板之间的间隔件。第一基板包括多个薄膜晶体管，以及用于驱动多个薄膜晶体管的栅极线和数据线。第二基板包括多个图像电极和对应于图像电极并形成水平电场的公共电极。间隔物是将第一衬底上的每个图像电极与第二衬底上的相应薄膜晶体管电连接的导电间隔物。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012054615A Tft array structure and method of manufacturing the same 有权
标题翻译： TFT阵列结构及其制造方法
公开(公告)号：JP2012054615A
公开(公告)日：2012-03-15
申请号：JP2011272089
申请日：2011-12-13
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： WANG ZHANGTAO , QIU HAIJUN , MIN TAE YUP , LIM SEUNG MOO
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/1214 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a TFT (Thin Film Transistor) array substrate and a method of manufacturing the same.SOLUTION: A TFT array substrate has: a transparent glass substrate 11; a gate line 12b coated by a gate insulation layer 13, a semiconductor layer 14, and an ohmic contact layer 15 sequentially on the upper side, and a gate electrode 12a integrated with the gate line 12b; an insulation layer 16 formed on both sides of the gate line 12b and the gate electrode 12a, the gate insulation layer 13, the semiconductor layer 14, and the ohmic contact layer 15; a segmentation groove 15a formed on the ohmic contact layer 15 and that segments the ohmic contact layer 15 above an intermediate position of the semiconductor layer 14; and a data line and first and second source-drain electrodes formed above the insulation layer 16 and the ohmic contact layer 15. The TFT array substrate can be manufactured by performing a photolithographic process four times without using a slit photolithographic process.
摘要翻译：要解决的问题：提供一种TFT（薄膜晶体管）阵列基板及其制造方法。解决方案：TFT阵列基板具有：透明玻璃基板11; 由栅极绝缘层13，半导体层14和欧姆接触层15依次地在上侧涂覆的栅极线12b和与栅极线12b成一体的栅电极12a; 形成在栅极线12b和栅电极12a，栅极绝缘层13，半导体层14和欧姆接触层15两侧的绝缘层16; 形成在欧姆接触层15上并将欧姆接触层15分割在半导体层14的中间位置之上的分割槽15a; 以及形成在绝缘层16和欧姆接触层15上方的数据线和第一和第二源极 - 漏极电极。可以通过在不使用狭缝光刻工艺的情况下进行四次光刻处理来制造TFT阵列基板。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2008070876A Tft-lcd array substrate and its manufacturing method 有权
标题翻译： TFT-LCD阵列基板及其制造方法
公开(公告)号：JP2008070876A
公开(公告)日：2008-03-27
申请号：JP2007235757
申请日：2007-09-11
申请人： Beijing Boe Optoelectronics Technology Co Ltd , 北京京東方光電科技有限公司
发明人： WANG ZHANGTAO , QIU HAIJUN , MIN TAE YUP , LIM SEUNG MOO
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
CPC分类号： H01L27/1288 , H01L27/124
摘要： PROBLEM TO BE SOLVED: To provide a TFT-LCD array substrate and its manufacturing method. SOLUTION: A first insulating layer, a semiconductor layer, and an ohmic contact layer formed on a source region and on a drain region of the semiconductor layer and exposing a channel are successively formed on a gate line and a gate electrode. A second insulating layer is formed on a substrate and covers side walls of the gate line and the gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and at the same time, exposes the ohmic contact layer in the source region and the drain region. A data line, a source electrode, a pixel electrode and a drain electrode are formed on the second insulating layer. A passivation layer is formed on a thin film transistor, on the gate line, and on the data line, and the pixel electrode is exposed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供TFT-LCD阵列基板及其制造方法。解决方案：在栅极线和栅电极上依次形成在半导体层的源极区域和漏极区域上形成的第一绝缘层，半导体层和欧姆接触层。在基板上形成第二绝缘层，并且覆盖栅极线和栅电极，第一绝缘层，半导体层和欧姆接触层的侧壁，同时使欧姆接触层暴露在源极区和漏极区。数据线，源电极，像素电极和漏电极形成在第二绝缘层上。在薄膜晶体管，栅极线和数据线上形成钝化层，并且使像素电极露出。版权所有（C）2008，JPO＆INPIT

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