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1. 发明申请

US20100117172A1 THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS 审中-公开
标题翻译：由甚高频能量等离子体沉积工艺制备的薄膜半导体合金材料
公开(公告)号：US20100117172A1
公开(公告)日：2010-05-13
申请号：US12267149
申请日：2008-11-07
申请人： Baojie Yan , Xixiang Xu , Guozhen Yue , Subhendu Guha , Chi Yang
发明人： Baojie Yan , Xixiang Xu , Guozhen Yue , Subhendu Guha , Chi Yang
IPC分类号： H01L33/00 , H01L21/36
CPC分类号： H01L21/0262 , C23C16/22 , C23C16/5096 , H01J37/32091 , H01J37/32761 , H01J2237/2001 , H01L21/02532 , H01L21/02592 , H01L21/02595
摘要： A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.
摘要翻译：通过VHF通电等离子体沉积工艺制造薄膜，氢化硅基半导体合金材料，其中处理气体在等离子体中分解，以将薄膜材料沉积到基底上。该过程在0.5-2.0托的范围内的工艺气体压力下进行，衬底温度不超过300℃，衬底 - 阴极间距在10-50毫米的范围内。沉积速率至少为每秒5埃。还公开了包括半导体材料的光伏器件。

2. 发明申请

US20100116334A1 VHF ENERGIZED PLASMA DEPOSITION PROCESS FOR THE PREPARATION OF THIN FILM MATERIALS 审中-公开
标题翻译：用于制备薄膜材料的VHF能量等离子体沉积工艺
公开(公告)号：US20100116334A1
公开(公告)日：2010-05-13
申请号：US12267048
申请日：2008-11-07
申请人： Xixiang Xu , David Alan Beglau , Guozhen Yue , Baojie Yan , Yang Li , Scott Jones , Subhendu Guha , Chi Yang
发明人： Xixiang Xu , David Alan Beglau , Guozhen Yue , Baojie Yan , Yang Li , Scott Jones , Subhendu Guha , Chi Yang
IPC分类号： H01L31/0376 , H01L21/20
CPC分类号： H01L21/02532 , C23C16/22 , C23C16/5096 , H01J37/32091 , H01J37/32761 , H01J2237/2001 , H01L21/02592 , H01L21/0262
摘要： A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.
摘要翻译： VHF通电等离子体沉积工艺，其中处理气体在等离子体中分解以将薄膜材料沉积到基底上，在处理气体压力为0.5-2.0托的范围内进行，基板温度为不超过300℃，衬底 - 阴极间距在10-50毫米的范围内。沉积速率至少为每秒5埃。本方法提供了具有至少等效于以低得多的沉积速率生产的材料的质量的半导体材料的高速沉积。

3. 发明申请

US20070256734A1 STABILIZED PHOTOVOLTAIC DEVICE AND METHODS FOR ITS MANUFACTURE 审中-公开
标题翻译：稳定的光伏器件及其制造方法
公开(公告)号：US20070256734A1
公开(公告)日：2007-11-08
申请号：US11744918
申请日：2007-05-07
申请人： Subhendu Guha , Chi Yang , Baojie Yan , Guozhen Yue
发明人： Subhendu Guha , Chi Yang , Baojie Yan , Guozhen Yue
IPC分类号： H01L31/00
CPC分类号： H01L31/075 , B82Y10/00 , H01L31/03685 , H01L31/03767 , Y02E10/545 , Y02E10/548
摘要： A semiconductor device of p-i-n type configuration includes a p layer which is comprised of a p-doped semiconductor material, an n layer comprised of an n-doped semiconductor material and an i layer comprised of a substantially intrinsic, nanocrystalline semiconductor material interposed therebetween. The crystalline volume in the i layer decreases as the thickness of said layer increases from its interface with the n layer to its interface with the p layer. The grain size of the substantially intrinsic nanocrystalline semiconductor material may also decrease as the thickness of the i layer increases from its interface with the n layer to its interface with the p layer. The volume of regions of intermediate range order in a portion of the i layer commencing at the interface of the i layer and the p layer, and comprising no more than 50% of the thickness thereof, is greater than is the volume of regions of intermediate range order in the remainder of the i layer. Devices of this type may be used as photovoltaic devices, and may be fabricated by a plasma deposition process.
摘要翻译： p-i-n型配置的半导体器件包括由p掺杂半导体材料构成的p层，由n掺杂半导体材料构成的n层和由其间插入的基本上本征的纳米晶体半导体材料构成的i层。随着所述层的厚度从其与n层的界面到其与p层的界面的增加，i层中的结晶体积减小。当i层的厚度从其与n层的界面到其与p层的界面增加时，基本上本征的纳米晶体半导体材料的晶粒尺寸也可以减小。在i层和p层的界面处开始的i层的部分中间范围阶数的区域的体积，其不超过其厚度的50％，大于中间层的区域的体积在i层剩余部分的范围顺序。这种类型的器件可以用作光伏器件，并且可以通过等离子体沉积工艺来制造。

4. 发明申请

US20130000717A1 BACK REFLECTOR WITH NANOCRYSTALLINE PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：背光反射器与纳米晶体光电器件
公开(公告)号：US20130000717A1
公开(公告)日：2013-01-03
申请号：US13537954
申请日：2012-06-29
申请人： Subhendu Guha , Chi Yang , Baojie Yan
发明人： Subhendu Guha , Chi Yang , Baojie Yan
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02366 , H01L31/035209 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and processes of manufacture are provided that employ particularly configured, textured back reflector structures that maintain a smooth, non-textured surface at the interface between the lowermost doped layer of semiconductor material and the intrinsic, light absorbing layer of nanocrystalline semiconductor material. The back reflector structure provides exhibit both superior short circuit current and a superior fill factor to a photovoltaic device such as those using nanocrystalline semiconductor materials.
摘要翻译：提供光伏器件和制造工艺，其采用特别配置的纹理化后反射器结构，其在半导体材料的最下掺杂层和纳米晶体半导体材料的本征光吸收层之间的界面处保持光滑的非纹理表面。背反射器结构提供了优异的短路电流和对诸如使用纳米晶体半导体材料的光伏器件的光伏器件的优异的填充因子。

5. 发明申请

US20110220177A1 TANDEM PHOTOVOLTAIC DEVICE WITH DUAL FUNCTION SEMICONDUCTOR LAYER 审中-公开
标题翻译：具有双功能半导体层的TANDEM光伏器件
公开(公告)号：US20110220177A1
公开(公告)日：2011-09-15
申请号：US12721153
申请日：2010-03-10
申请人： Baojie Yan , Subhendu Guha , Chi Yang
发明人： Baojie Yan , Subhendu Guha , Chi Yang
IPC分类号： H01L31/05 , H01B1/00 , H01B1/04
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/0324 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A tandem photovoltaic device includes at least two photovoltaic cells stacked in an optical and electrical series relationship. At least one of the tandem cells includes a dual function semiconductor layer fabricated from a dual function semiconductor material. This dual function layer is an electronically active constituent of the cell. The dual function layer also is optically active and creates a reflective condition which redirects a portion of the light which has passed through the cell back through the cell's active layers to photo generate additional photocurrent. Use of the dual function material eliminates the need for incorporating separate semiconductor and reflective layers in a photovoltaic device. Further disclosed are exemplary formulations of some dual function materials.
摘要翻译：串联光伏器件包括至少两个以光学和电子系列关系堆叠的光伏电池。串联电池中的至少一个包括由双功能半导体材料制成的双功能半导体层。该双重功能层是电池的电子活性成分。双重功能层也是光学活性的并且产生反射状态，其将已经通过单元的光的一部分重新定向穿过单元的活性层，以产生额外的光电流。使用双功能材料消除了在光伏器件中并入分离的半导体和反射层的需要。进一步公开的是一些双功能材料的示例性配方。

6. 发明申请

US20050164474A1 Method for depositing high-quality microcrystalline semiconductor materials 失效
标题翻译：沉积高品质微晶半导体材料的方法
公开(公告)号：US20050164474A1
公开(公告)日：2005-07-28
申请号：US10765435
申请日：2004-01-27
申请人： Subhendu Guha , Chi Yang , Baojie Yan
发明人： Subhendu Guha , Chi Yang , Baojie Yan
IPC分类号： C23C16/24 , C23C16/455 , H01L21/205 , H01L31/18 , H01L31/20 , H01L21/20
CPC分类号： C23C16/45523 , C23C16/24 , H01L21/02532 , H01L21/0262 , H01L31/1816 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
摘要翻译：微晶半导体材料层的等离子体沉积的方法是通过对包含半导体材料的前体的工艺气体和具有电磁能量的稀释剂进行激励，从而产生等离子体来进行的。等离子体将一层微晶半导体材料沉积到基底上。处理气体中稀释剂的浓度随着沉积的微晶半导体材料层的厚度而变化。还公开了该方法用于制备N-I-P型光伏器件的用途。

7. 发明申请

US20100116338A1 HIGH QUALITY SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：高质量半导体材料
公开(公告)号：US20100116338A1
公开(公告)日：2010-05-13
申请号：US12266957
申请日：2008-11-07
申请人： Xixiang Xu , Subhendu Guha , Chi Yang
发明人： Xixiang Xu , Subhendu Guha , Chi Yang
IPC分类号： H01L31/00 , C01B33/04
CPC分类号： H01L31/075 , H01L31/0284 , H01L31/03762 , H01L31/03765 , H01L31/03767 , H01L31/076 , H01L31/1804 , H01L31/1812 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm−3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
摘要翻译：氢化硅基半导体合金的缺陷密度小于1016cm-3。合金可以包括氢化硅合金或氢化硅 - 锗合金。合金的氢含量通常小于15％，在某些情况下小于11％。掺入合金的串联光伏器件显示低水平的光降解。在某些情况下，材料通过高速VHF沉积工艺制造。

8. 发明授权

US5334423A Microwave energized process for the preparation of high quality semiconductor material 失效
标题翻译：微波激励工艺为高品质半导体材料的制备
公开(公告)号：US5334423A
公开(公告)日：1994-08-02
申请号：US10074
申请日：1993-01-28
申请人： Subhendu Guha , Chi C. Yang , XiXiang Xu
发明人： Subhendu Guha , Chi C. Yang , XiXiang Xu
IPC分类号： B05D5/12 , C23C16/50 , C23C16/511 , H01J37/32 , H01L21/205 , B05D3/06
CPC分类号： H01J37/32357 , C23C16/511 , H01J37/32697
摘要： High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.
摘要翻译：高质量的半导体材料沉积在微波通电的辉光放电沉积工艺中，通过以足以在100％饱和模式下或接近100％饱和模式产生等离子体的功率水平通过微波能量激励处理气体并通过阻止沉积物质进入衬底而进行以便将沉积速率降低到小于在100％饱和模式下操作的值。

9. 发明授权

US07902049B2 Method for depositing high-quality microcrystalline semiconductor materials 失效
标题翻译：沉积高品质微晶半导体材料的方法
公开(公告)号：US07902049B2
公开(公告)日：2011-03-08
申请号：US10765435
申请日：2004-01-27
申请人： Subhendu Guha , Chi C. Yang , Baojie Yan
发明人： Subhendu Guha , Chi C. Yang , Baojie Yan
IPC分类号： H01L21/00
CPC分类号： C23C16/45523 , C23C16/24 , H01L21/02532 , H01L21/0262 , H01L31/1816 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
摘要翻译：微晶半导体材料层的等离子体沉积的方法是通过对包含半导体材料的前体的工艺气体和具有电磁能量的稀释剂进行激励，从而产生等离子体来进行的。等离子体将一层微晶半导体材料沉积到基底上。工艺气体中稀释剂的浓度随着沉积的微晶半导体材料层的厚度而变化。还公开了该方法用于制备N-I-P型光伏器件的用途。

10. 发明授权

US5346853A Microwave energized deposition process with substrate temperature control for the fabrication of P-I-N photovoltaic devices 失效
标题翻译：微波带电沉积工艺，具有用于制造P-I-N光伏器件的衬底温度控制
公开(公告)号：US5346853A
公开(公告)日：1994-09-13
申请号：US185309
申请日：1994-01-21
申请人： Subhendu Guha , Chi C. Yang , XiXiang Xu
发明人： Subhendu Guha , Chi C. Yang , XiXiang Xu
IPC分类号： H01L21/205 , H01L31/20 , H01L21/00 , H01L21/02 , H01L21/326
CPC分类号： H01L31/204 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.
摘要翻译：衬底温度保持在400℃以上。在第IV组半导体材料的微波激发辉光放电沉积期间。衬底温度范围提供具有改善的电性能的材料的制备。通过使用微波产生的等离子体沉积本征层并且衬底温度超过400℃，可以显着提高引脚类型的光电器件的电池效率。对于在400°-500范围内进行的沉积，发生最大电池效率 DEG C.

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