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1. 发明专利

JPH10163503A INTEGRATED VERTICAL SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH10163503A
公开(公告)日：1998-06-19
申请号：JP31526697
申请日：1997-11-17
申请人： BOSCH GMBH ROBERT
发明人： MICHEL HARTMUT , FLOHRS PETER , PLUNTKE CHRISTIAN DR , GOERLACH ALFRED , MINDL ANTON DR , QU NING DR
IPC分类号： H01L23/58 , H01L29/80 , H01L29/8605
摘要： PROBLEM TO BE SOLVED: To enable an integrated vertical semiconductor element on an n-type substrate to supply a quantity of electricity correlated with the potential at a rear-side region. SOLUTION: In a vertically positioned transistor, a hole 20 exists in a logical well 5 and has a front-side area 1 doped with an n-type dopant at a low concentration. The hole 20 can be electrically contacted through a hole tap 21 and a hole metallic contact 22. The logical well 5 can be contacted preferably with logical well taps 11 and logical tap terminals 12 symmetrically with respect to the hole 20. In this case, the well 5 is normally set at a grounding potential. A potential is impressed upon a contact C in the rear-side region. Therefore, an electric current flows to the hole metallic contact 22 in the front-side area 1 from the rear-side area. The potential is positive and higher than that at the contact 22.

2. 发明申请

WO2006037711A3 SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：半导体部件
公开(公告)号：WO2006037711A3
公开(公告)日：2006-07-13
申请号：PCT/EP2005054523
申请日：2005-09-12
申请人： BOSCH GMBH ROBERT , FLOHRS PETER , GOERLACH ALFRED , URBACH PETER , FEILER WOLFGANG , QU NING , HEYERS KLAUS
发明人： FLOHRS PETER , GOERLACH ALFRED , URBACH PETER , FEILER WOLFGANG , QU NING , HEYERS KLAUS
IPC分类号： H01L29/8605 , H01L21/329
CPC分类号： H01L28/20 , G01K7/22 , H01L27/0802 , H01L29/8605 , H01L29/8611
摘要： The invention relates to a semiconductor element and to a method for producing a semiconductor element of this type, whose resistance behaviour is strongly dependent on the temperature. Said resistance behaviour is obtained by a special multi-layer structure of the semiconductor element, a layer being configured in such a way that several p-doped regions are present in an n-doped region, said regions being short-circuited on one face by means of a metallised layer. The semiconductor element can for example be used to reduce current spikes by being integrated into a conductor. When cold, the semiconductor component has a high resistance, which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.
摘要翻译：本发明公开一种半导体器件及其制造具有电阻行为，这是高度依赖于温度这样的半导体器件的方法。此电阻器的行为，是由半导体器件，其中一个层被设计成使得多个p掺杂区的存在，例如，在n型掺杂的区域，该区域被短路通过金属化的手段在一侧的一个特殊的多层结构得到的。半导体器件可以被用于减少电流尖峰，例如，在那里它然后整合入的导体。在冷态下，半导体器件具有高电阻，其在半导体器件的加热后由于流过的电流是显著小。

3. 发明专利

DE10340937A1 未知
公开(公告)号：DE10340937A1
公开(公告)日：2005-03-31
申请号：DE10340937
申请日：2003-09-05
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER , MICHEL HARTMUT
IPC分类号： H03K17/082 , H01L23/62 , H01L29/73 , H02H7/20 , H02H9/00

4. 发明专利

IT1296458B1 未知
公开(公告)号：IT1296458B1
公开(公告)日：1999-06-25
申请号：ITMI972564
申请日：1997-11-18
申请人： BOSCH GMBH ROBERT
发明人： MICHEL HARTMUT , FLOHRS PETER , PLUNTKE CHRISTIAN , GOERLACH ALFRED , MINDL ANTON , QU NING
IPC分类号： H01L23/58 , H01L29/80 , H01L29/8605

5. 发明专利

MX157924A 未知
公开(公告)号：MX157924A
公开(公告)日：1988-12-21
申请号：MX20512185
申请日：1985-04-26
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER , MICHEL HARTMUT
IPC分类号： H01L29/73 , H01L21/02 , H01L21/331 , H01L21/8222 , H01L27/08 , H01L27/082 , H01L29/06 , H01L29/40 , H01L29/72 , H01L29/732 , H01L29/8605 , H01L23/56 , H01L21/72

6. 发明专利

AU578093B2 MONOLITHIC INTEGRATED PLANAR SEMI-CONDUCTOR DEVICE 未知
公开(公告)号：AU578093B2
公开(公告)日：1988-10-13
申请号：AU4234285
申请日：1985-04-16
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER , MICHEL HARTMUT
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L23/528 , H01L27/08 , H01L27/082 , H01L29/06 , H01L29/08 , H01L29/40 , H01L27/06
摘要： PCT No. PCT/DE85/00118 Sec. 371 Date Aug. 21, 1985 Sec. 102(e) Date Aug. 21, 1985 PCT Filed Apr. 16, 1985 PCT Pub. No. WO85/05497 PCT Pub. Date Dec. 5, 1985.A semiconductor arrangement is suggested which is provided with a capacity transistor and a drive transistor in form of a Dralington-circuit. Thereby, the two transistors are monolithically integrated with a planar technique in a common substrate (8), which forms the two collector zones of the two transistors (T1,T2). A passivation layer (14) covers the main face of substrate (8) covering this main surface with the exception of contact windows. A cover electrode (13) is disposed above the passivation layer in the area between the collector zone and the base zone (4) of the capacity transistor (T2), whereby this passivation layer is connected with a resistor strip (2) at a distance from the base zone (4) for adjusting its potential. An additional guard strip (3) is diffused into the main surface between the resistor strip (2) and the base zone (4). In order to prevent a voltage rupture in the area of the resistor strip (2), the passivation layer is designed thinner at the area adjacent the base zone (4) than in the remaining area beneath the cover electrode (13).

7. 发明专利

DE102005035605A1 Monolithic integrated circuit arrangement, has first temperature sensor and second temperature sensor and has different form of thermal coupling to heat source, evaluation circuit is provided for evaluation of temperature gradient 未知
公开(公告)号：DE102005035605A1
公开(公告)日：2007-02-01
申请号：DE102005035605
申请日：2005-07-29
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER , MICHEL HARTMUT
IPC分类号： H01L23/62 , H02H5/04 , H03K17/60
摘要： Monolithic integrated circuit arrangement has a first temperature sensor (1) and a second temperature sensor (2) whereby the first temperature sensor and the second temperature sensor has a different form of thermal coupling to heat source (4). An evaluation circuit is provided for evaluation of the temperature gradient at the first temperature sensor and the second temperature sensor. Independent claims are included for the following: (A) Circuit arrangement and (B) Method for determination of time interval.

8. 发明专利

DE3275044D1 PLANAR SEMICONDUCTOR DEVICE 未知
公开(公告)号：DE3275044D1
公开(公告)日：1987-02-12
申请号：DE3275044
申请日：1982-09-03
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER
IPC分类号： H01L29/73 , H01L21/33 , H01L21/331 , H01L27/082 , H01L29/06 , H01L29/40 , H01L29/70 , H01L29/861
摘要： PCT No. PCT/DE82/00175 Sec. 371 Date Sep. 15, 1983 Sec. 102(e) Date Sep. 15, 1983 PCT Filed Sep. 3, 1982 PCT Pub. No. WO83/02529 PCT Pub. Date Jul. 21, 1983.A planar semiconductor structure is proposed which has a monocrystalline semiconductor chip (10) of a specific conductivity type, a first zone (11) of the opposite conductivity type introduced into the semiconductor chip (10) by diffusion from a main surface and together with the material making up the semiconductor chip (10) forming a p-n junction (12), and a passivation layer (13) covering this same main surface of the semiconductor chip (10) with the exception of contact windows. A second, annular zone (14) acting as a stop ring and having the same conductivity type as the basic material making up the semiconductor chip (10) but a higher concentration of impurities is introduced into the semiconductor chip (10) from the same main surface such that it surrounds the first zone (11). A metallizing coating acting as a cover electrode (15) is applied to the passivation layer (13), surrounding the p-n junction (12) annularly and overlapping the line of intersection of this junction with the main surface of the semiconductor chip (10). This metallizing coating extends into the region above the annular zone (14). The potential of the cover electrode (15) is adjustable such that it is between the potential of the first zone (11) and the potential of a portion of the semiconductor chip (10) located outside the first zone (11) and having a conductivity type opposite that of the first zone (11). In order to adjust the potential at the cover electrode (15), a voltage divider (16) is provided (FIG. 1).

9. 发明专利

DE3273498D1 DARLINGTON TRANSISTOR CIRCUIT 未知
公开(公告)号：DE3273498D1
公开(公告)日：1986-10-30
申请号：DE3273498
申请日：1982-12-30
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/08 , H01L27/082 , H01L29/06 , H01L29/40

10. 发明专利

BR8506729A 未知
公开(公告)号：BR8506729A
公开(公告)日：1986-09-23
申请号：BR8506729
申请日：1985-04-16
申请人： BOSCH GMBH ROBERT
发明人： FLOHRS PETER , MICHEL HARTMUT
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L23/528 , H01L27/08 , H01L27/082 , H01L29/06 , H01L29/08 , H01L29/40
摘要： PCT No. PCT/DE85/00118 Sec. 371 Date Aug. 21, 1985 Sec. 102(e) Date Aug. 21, 1985 PCT Filed Apr. 16, 1985 PCT Pub. No. WO85/05497 PCT Pub. Date Dec. 5, 1985.A semiconductor arrangement is suggested which is provided with a capacity transistor and a drive transistor in form of a Dralington-circuit. Thereby, the two transistors are monolithically integrated with a planar technique in a common substrate (8), which forms the two collector zones of the two transistors (T1,T2). A passivation layer (14) covers the main face of substrate (8) covering this main surface with the exception of contact windows. A cover electrode (13) is disposed above the passivation layer in the area between the collector zone and the base zone (4) of the capacity transistor (T2), whereby this passivation layer is connected with a resistor strip (2) at a distance from the base zone (4) for adjusting its potential. An additional guard strip (3) is diffused into the main surface between the resistor strip (2) and the base zone (4). In order to prevent a voltage rupture in the area of the resistor strip (2), the passivation layer is designed thinner at the area adjacent the base zone (4) than in the remaining area beneath the cover electrode (13).

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