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    • 5. 发明申请
    • FIELD EFFECT ELEMENTS
    • 场效应元素
    • WO2009013291A2
    • 2009-01-29
    • PCT/EP2008/059598
    • 2008-07-22
    • BASF SEHENNIG, IngolfDÖTZ, FlorianECKERLE, PeterPARASHKOV, RadoslavKASTLER, MarcelVAIDYANATHAN, Subramanian
    • HENNIG, IngolfDÖTZ, FlorianECKERLE, PeterPARASHKOV, RadoslavKASTLER, MarcelVAIDYANATHAN, Subramanian
    • H01L51/30
    • H01L51/052H01L51/0529
    • A field effect element comprising: a source electrode (6) and a drain-electrode (7), a semiconducting layer (2) comprising a semiconducting compound being in contact with the source electrode (6) and the drain electrode (7), - a gate electrode (5), and a dielectric layer (3) comprising one or more compounds selected from hygroscopic organic compounds and/or from nanoparticulate inorganic compounds being arranged between the semiconducting layer (2) and the gate electrode (5), wherein said hygroscopic organic compounds have a water absorption capability of more than 1.2 % by weight, and a hydrophobic insulating layer (4) being arranged between the gate electrode (5) and the dielectric layer (3) preventing diffusion of water into the one or more hygroscopic compounds of the dielectric layer during the time of use of the field effect element, said hydrophobic insulating layer (4) having a water absorption capability of less than 1.2 % by weight, the semiconducting layer (2), the dielectric layer (3) or the hydrophobic insulating layer (4), or a combination thereof, being disposable from a liquid; and a process for producting the same.
    • 一种场效应元件,包括:源极(6)和漏电极(7);包含与源电极(6)和漏电极(7)接触的半导体化合物的半导体层(2) 栅电极(5)和包含一种或多种选自吸湿有机化合物和/或从纳米颗粒无机化合物组成的化合物的电介质层(3),其布置在半导电层(2)和栅电极(5)之间,其中所述 吸湿性有机化合物具有大于1.2重量%的吸水能力,并且在栅电极(5)和电介质层(3)之间布置疏水绝缘层(4),防止水扩散到一个或多个吸湿性 在场效应元件使用期间介电层的化合物,所述疏水绝缘层(4)的吸水能力小于1.2%(重量),半导体层(2),介电层 c层(3)或疏水绝缘层(4),或其组合,其是从液体中一次性的; 以及产品的制造过程。
    • 10. 发明申请
    • METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE
    • 用于生产有机半导体器件的方法
    • WO2013113389A1
    • 2013-08-08
    • PCT/EP2012/051738
    • 2012-02-02
    • BASF SEVAIDYANATHAN, SubramanianKASTLER, MarcelTAN, BerthaZHOU, Mi
    • VAIDYANATHAN, SubramanianKASTLER, MarcelTAN, BerthaZHOU, Mi
    • H01L51/00H01L51/10H01L51/05
    • H01L51/0035H01L51/0036H01L51/0043H01L51/0053H01L51/0541H01L51/0562H01L51/105
    • A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS-R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
    • 公开了一种用于制造具有至少一种有机半导体材料(122)和至少两个电极(114)的有机半导体器件(110)的方法,所述至少两个电极(114)适于支持通过有机半导体材料(122)传输的电荷载体。 有机半导体材料(122)本身具有双极性半导体性质。 所述方法包括产生至少一个中间层(120)的至少一个步骤,所述中间层至少部分地介于有机半导体材料(122)和有机半导体器件(110)的至少一个电极(114)之间。 中间层(120)包含至少一种具有通式HS-R的硫醇化合物,其中R是有机残基。 硫醇化合物具有指向远离硫醇化合物的SH基团的电偶极矩。 电偶极矩与4-苯基苯硫酚中的电偶极矩至少相同。 通过中间层(120),电极(114)之间的双极电荷载流子传输被抑制以有利于单极电荷载流子传输。