专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006083383A2 LOW-TEMPERATURE-GROWN (LTG) INSULATED-GATE PHEMT DEVICE AND METHOD 审中-公开
标题翻译：低温成型（LTG）绝缘栅型PHEMT装置和方法
公开(公告)号：WO2006083383A2
公开(公告)日：2006-08-10
申请号：PCT/US2005/043357
申请日：2005-12-01
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC. , NICHOLS, Kirby, B , ACTIS, Robert , XU, Dong , KONG, Wendell, M., T.
发明人： NICHOLS, Kirby, B , ACTIS, Robert , XU, Dong , KONG, Wendell, M., T.
IPC分类号： H01L29/24
CPC分类号： H01L29/42376 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/314 , H01L29/66462 , H01L29/7784
摘要： A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
摘要翻译：假晶高电子迁移率晶体管（PHEMT）包括衬底，设置在衬底上的低温生长（LTG）GaAs栅极绝缘层和设置在衬底上的栅电极栅绝缘层。

2. 发明申请

WO2013055423A2 METHOD AND DESIGN OF AN RF THRU-VIA INTERCONNECT 审中-公开
标题翻译：射频三相互连接的方法与设计
公开(公告)号：WO2013055423A2
公开(公告)日：2013-04-18
申请号：PCT/US2012/047135
申请日：2012-07-18
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. , ACTIS, Robert , CHAO, Pane-Chane , LENDER, Robert, J. , CHU, Kanin , SCHMANSKI, Bernard, J. , JESSUP, Sue, May , XU, Dong , IMMORLICA, Anthony, A.
发明人： ACTIS, Robert , CHAO, Pane-Chane , LENDER, Robert, J. , CHU, Kanin , SCHMANSKI, Bernard, J. , JESSUP, Sue, May , XU, Dong , IMMORLICA, Anthony, A.
IPC分类号： H01L27/14
CPC分类号： H01L23/373 , H01L23/481 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2224/4847 , H01L2924/10272 , H01L2924/1033 , H01L2924/1421 , H01L2924/3011 , H01L2924/30111 , H01L2924/00
摘要： In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a heat sink.
摘要翻译：总而言之，以通孔形式的垂直金属化转变从高导热性衬底的背面开始并通过其上的任何半导体层到图案化的金属化带，衬底在背面具有图案化的金属化层，具有保留区，其尺寸设置成为通过衬底耦合到半导体器件的RF能量提供阻抗匹配，同时允许由半导体器件产生的热量流过高导热性衬底，通过该衬底的背面衬底和散热片。

3. 发明申请

WO2006057774A2 SOLID-STATE ULTRA-WIDEBAND MICROWAVE POWER AMPLIFIER EMPLOYING MODULAR NON-UNIFORM DISTRIBUTED AMPLIFIER ELEMENTS 审中-公开
标题翻译：采用模块化非均匀分布式放大器元件的固态超宽带微波功率放大器
公开(公告)号：WO2006057774A2
公开(公告)日：2006-06-01
申请号：PCT/US2005/039407
申请日：2005-11-01
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. , LENDER, Robert, J., Jr. , ACTIS, Robert
发明人： LENDER, Robert, J., Jr. , ACTIS, Robert
CPC分类号： H03F3/211 , H03F1/42 , H03F3/195 , H03F3/604 , H03F3/607 , H03F2200/39 , H03F2200/453 , H03F2200/543 , H03F2203/21106 , H03F2203/21142 , H03F2203/21178
摘要： A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.
摘要翻译：多个相同的非均匀分布的超宽带功率放大器串构建块被耦合在一起以形成超宽带宽的高功率放大器。非均匀分布导致使用具有仅具有实数值的输入和输出阻抗的模块化串构建块的放大器。这允许通过简单的阻抗匹配将串复制并连接在一起。与非线性分布相关的内部阻抗匹配也吸收寄生电容以允许超宽带操作。在一个实施例中，对于每个单元使用相同的晶体管，使得可以对这些串进行相同的复制。这允许模块重新使用而无需重新配置。在一个实施例中，使用主题构建块构建的非均匀分布式功率放大器提供适用于电子战和通信应用的超宽带多倍频程设备，尤其是用于替代行波管。

4. 发明申请

WO2018005602A1 HIGH POWER RADIO FREQUENCY AMPLIFIER ARCHITECTURE 审中-公开
标题翻译：高功率射频放大器架构
公开(公告)号：WO2018005602A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/039667
申请日：2017-06-28
申请人： BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
发明人： ACTIS, Robert , LENDER, Robert, J., Jr. , MAJCHER, Jared, P. , MUIR, John, R. , POWERS, Edwin, C.
IPC分类号： H04B1/04 , H03F3/19 , H03F3/21 , H01L23/00 , H01L23/02 , H01L23/66 , H01L25/065 , H01L23/367 , H01L23/373
摘要： A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and K a -band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.
摘要翻译：公开了一种固态放大器架构。在一些实施例中，所公开的架构可以包括第一和第二信道芯片组，其被配置为放大射频（RF）输入信号或其子带的整个瞬时频带，其可以在两个芯片组之间按比例分配。在一些情况下，芯片组可以被配置为同时放大超过整个K频带和K a频带频率的频率。在一些情况下，该架构可以被配置为将例如从电子战（EW）系统接收的信号定位到对数放大器级，该对数放大器级被配置为向EW系统输出信号，响应于此，EW系统可以生成用于传输的架构放大的RF信号。为了促进散热，该结构可以部分或全部与导热载体耦合，可选地具有中间金刚石散热层。

5. 发明公开

EP3479488A1 HIGH POWER RADIO FREQUENCY AMPLIFIER ARCHITECTURE 有权
公开(公告)号：EP3479488A1
公开(公告)日：2019-05-08
申请号：EP17821122.3
申请日：2017-06-28
申请人： Bae Systems Information And Electronic Systems Integration Inc.
发明人： ACTIS, Robert , LENDER, Robert, J., Jr. , MAJCHER, Jared, P. , MUIR, John, R. , POWERS, Edwin, C.
IPC分类号： H04B1/04 , H03F3/19 , H03F3/21 , H01L23/00 , H01L23/02 , H01L23/66 , H01L25/065 , H01L23/367 , H01L23/373

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式