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1. 发明申请

US20100187714A1 PATTERN GENERATION METHOD, RECORDING MEDIUM, AND PATTERN FORMATION METHOD 审中-公开
标题翻译：图案生成方法，记录介质和图案形成方法
公开(公告)号：US20100187714A1
公开(公告)日：2010-07-29
申请号：US12691813
申请日：2010-01-22
申请人： Ayumi KOBIKI , Takeshi KOSHIBA , Hidefumi MUKAI , Yasutada NAKAGAWA , Seiro MIYOSHI
发明人： Ayumi KOBIKI , Takeshi KOSHIBA , Hidefumi MUKAI , Yasutada NAKAGAWA , Seiro MIYOSHI
IPC分类号： B32B3/26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A pattern generation method of generating a three-dimensional pattern to be formed at a template for use in a method of forming a pattern by filling a resist material in the three-dimensional pattern of the template includes performing at least one of adjustment of a depth of the three-dimensional pattern and division of the three-dimensional pattern, based on a relationship between a filling time of the resist material and a dimension or shape of the three-dimensional pattern.
摘要翻译：通过在模板的三维图案中填充抗蚀剂材料来生成在用于形成图案的方法中的模板上形成的三维图案的图案生成方法包括：执行至少一个调整深度基于抗蚀剂材料的填充时间与三维图案的尺寸或形状之间的关系，三维图案和三维图案的划分。

2. 发明申请

US20110300646A1 PATTERN FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND TEMPLATE MANUFACTURING METHOD 有权
标题翻译：图案形成方法，半导体器件的制造方法和模板制造方法
公开(公告)号：US20110300646A1
公开(公告)日：2011-12-08
申请号：US13015351
申请日：2011-01-27
申请人： Seiro MIYOSHI , Hidefumi MUKAI , Takeshi KOSHIBA
发明人： Seiro MIYOSHI , Hidefumi MUKAI , Takeshi KOSHIBA
IPC分类号： H01L21/66 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887
摘要： In the pattern forming method according to the embodiment, second templates are manufactured by an imprint technology using first templates manufactured by applying a predetermined misalignment distribution for each shot on a first substrate by an exposure apparatus. Then, an upper-layer-side pattern is formed by an imprint technology using a second template in which an inter-layer misalignment amount between a lower-layer-side pattern already formed above a second substrate and the upper-layer-side pattern to be formed above the second substrate becomes equal to or lower than a predetermined reference value.
摘要翻译：在根据实施例的图案形成方法中，通过压印技术制造第二模板，使用通过由曝光装置在第一基板上施加每次拍摄的预定的未对准分布而制造的第一模板。然后，通过使用第二模板的压印技术形成上层侧图案，其中在已经形成在第二基板上的下层侧图案与上层侧图案之间的层间未对准量与形成在第二基板的上方成为规定的基准值以下。

3. 发明申请

US20130157437A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20130157437A1
公开(公告)日：2013-06-20
申请号：US13601003
申请日：2012-08-31
申请人： Yoshihiro YANAI , Koichi MATSUNO , Seiro MIYOSHI
发明人： Yoshihiro YANAI , Koichi MATSUNO , Seiro MIYOSHI
IPC分类号： H01L21/302 , H01L21/76
CPC分类号： H01L21/0274 , G11C16/0408 , H01L21/0337 , H01L21/28123 , H01L21/32139 , H01L27/11524 , H01L29/66825
摘要： According to one embodiment, firstly, an inversion pattern having a periodic pattern in which a first line pattern and a space are inversed and a non-periodic pattern arranged at an interval which is substantially equal to the width of the first line pattern from the end of the periodic pattern is formed above a processing object so as to correspond to the plurality of spaces between a plurality of first line patterns in a first pattern and the space between the first pattern and a second pattern. Next, a sidewall film is formed around the inversion pattern, and the periodic pattern is removed selectively. Thereafter, the processing object is etched using the sidewall pattern formed of the sidewall film and the non-periodic pattern surrounded by the sidewall film as masks.
摘要翻译：根据一个实施例，首先，具有其中第一线图案和空间被倒置的周期性图案的反转图案和以从第一个第一线图案的宽度基本上等于第一线图案的宽度的间隔排列的非周期性图案在处理对象之上形成周期性图案，以便对应于第一图案中的多个第一线图案与第一图案与第二图案之间的空间之间的多个间隔。接下来，在反转图案周围形成侧壁膜，并且选择性地去除周期性图案。此后，使用由侧壁膜形成的侧壁图案和由侧壁膜包围的非周期性图案作为掩模来蚀刻处理对象。

4. 发明申请

US20100304568A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100304568A1
公开(公告)日：2010-12-02
申请号：US12752684
申请日：2010-04-01
申请人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
发明人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
IPC分类号： H01L21/302 , G03F7/20
CPC分类号： G03F1/34 , G03F7/095 , H01L21/0274 , H01L21/31144
摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
摘要翻译：图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度，通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置，以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂剩下第二光致抗蚀剂。

5. 发明申请

US20090123878A1 PATTERNING METHOD 审中-公开
标题翻译：绘图方法
公开(公告)号：US20090123878A1
公开(公告)日：2009-05-14
申请号：US12256240
申请日：2008-10-22
申请人： Seiro MIYOSHI , Eishi Shiobara
发明人： Seiro MIYOSHI , Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： H01L21/31144 , G03F7/11 , G03F7/2004 , H01L21/0274 , H01L21/28017 , H01L21/32139
摘要： A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.
摘要翻译：图案化方法包括：在工件基板上形成第一膜; 在第一膜上形成第二膜，第二膜是相对于第一膜的EUV（极紫外）光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

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