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1. 发明授权

US4734394A Process for producing molecular sieve carbon fibers 失效
标题翻译：生产分子筛碳纤维的方法
公开(公告)号：US4734394A
公开(公告)日：1988-03-29
申请号：US898775
申请日：1986-08-19
申请人： Atushi Kosaka , Makoto Takemura , Naohisa Ohyama , Minoru Hatano
发明人： Atushi Kosaka , Makoto Takemura , Naohisa Ohyama , Minoru Hatano
IPC分类号： B01J20/20 , C01B13/02 , C01B21/04 , C01B31/02 , C01B31/08 , C01B37/00 , B01J20/30 , B01J20/28 , D01F9/12
CPC分类号： B01J20/20 , C01B13/0266 , C01B2210/0046
摘要： Molecular sieve carbon fibers capable of separating and purifying nitrogen from air in large quantities are provided. The carbon fibers have diameters of 5 to 50 .mu.m and micropores opening directly at the surface of the carbon fibers with pore sizes of 0.5 nm or less. They are capable of separating nitrogen at a purity of 98% or higher, even 99.9% or higher from air, etc., with a relatively low adsorbing pressure and deadsorbing vacuum. The molecular sieve carbon fibers do not deteriorate during operation since they are resistant to division or powdering and the adsorbing pressure and deadsorbing vacuum are relatively low.
摘要翻译：提供了能够大量分离和净化氮气的分子筛碳纤维。碳纤维的直径为5〜50μm，微孔直径在0.5nm以下的碳纤维的表面开口。它们能够以相对低的吸附压力和吸附真空从空气等分离纯度为98％以上，甚至99.9％以上的氮。分子筛碳纤维在操作中不会劣化，因为它们耐分裂或粉化，并且吸附压力和吸附真空度相对较低。

2. 发明授权

US08273623B2 Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
标题翻译：具有电容均匀性结构的集成高压电容器及其制造方法
公开(公告)号：US08273623B2
公开(公告)日：2012-09-25
申请号：US13396159
申请日：2012-02-14
申请人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
发明人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译：本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分绝缘体（130）包括层间介电层（135,138,143或148）。集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。

3. 发明授权

US08114731B2 Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
公开(公告)号：US08114731B2
公开(公告)日：2012-02-14
申请号：US12276507
申请日：2008-11-24
申请人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
发明人： David L. Larkin , Lily X. Springer , Makoto Takemura , Ashish V. Gokhale , Dhaval A. Saraiya
IPC分类号： H01L21/8244
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).

4. 发明申请

US20110166131A1 SUBSTITUTED PYRROLIDINE DERIVATIVE 失效
标题翻译：取代吡咯烷衍生物
公开(公告)号：US20110166131A1
公开(公告)日：2011-07-07
申请号：US13045567
申请日：2011-03-11
申请人： Hisashi TAKAHASHI , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
发明人： Hisashi TAKAHASHI , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
IPC分类号： A61K31/5383 , C07D498/06 , A61P31/04
CPC分类号： C07D401/04 , C07D498/06
摘要： A quinolone antibacterial compound, or a salt or hydrate of the compound, for the treatment of infectious diseases, which exhibit potent antibacterial activity and higher selective toxicity against Gram-positive and Gram-negative bacteria, which do not cause side effects (e.g., convulsion), which exhibit higher safety, and which has a structure of formula (I):
摘要翻译：用于治疗感染性疾病的喹诺酮类抗菌化合物或化合物的盐或水合物，其对革兰氏阳性和革兰氏阴性菌具有强力的抗菌活性和较高的选择性毒性，其不引起副作用（例如惊厥），其具有更高的安全性，并且具有式（I）的结构：

5. 发明授权

US07960254B2 Manufacturing method for epitaxial wafer 有权
标题翻译：外延晶圆的制造方法
公开(公告)号：US07960254B2
公开(公告)日：2011-06-14
申请号：US12645744
申请日：2009-12-23
申请人： Naoyuki Wada , Makoto Takemura
发明人： Naoyuki Wada , Makoto Takemura
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4411 , C23C16/481 , C23C24/082 , H01L21/02532 , H01L21/02579
摘要： To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion.
摘要翻译：为了提供一种外延晶片的制造方法，其能够缓和由于晶片和基座之间的粘附而引起的背面的变形，从而防止由于升降销引起的平坦度的降低。根据本发明的外延晶片的制造方法包括：在其背面形成有氧化膜的氧化膜形成工序; 通过部分去除氧化膜来提供暴露半导体晶片的背面的疏水部分的蚀刻步骤; 放置半导体晶片的晶片放置步骤; 以及在半导体晶片的主表面上生长外延层的外延生长步骤; 并且设置在基座的底面上的圆上的提升销安装圈的直径小于疏水部分的直径。

6. 发明授权

US07731801B2 Semiconductor wafer treatment method and apparatus therefor 有权
标题翻译：半导体晶片处理方法及其装置
公开(公告)号：US07731801B2
公开(公告)日：2010-06-08
申请号：US11213809
申请日：2005-08-30
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30
CPC分类号： H01L21/02052 , B08B3/04 , B08B2203/005 , H01L21/304
摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.
摘要翻译：在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。第一超纯水通过紫外线灭菌法精制。第一超纯水的总有机碳含量大于1μg/升且不大于20μg/升，从而获得预定清洁度的硅晶片。在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。第二超纯水通过紫外线氧化法精制，其总有机碳含量为1μg/升以下。因此，获得了预定清洁度的硅晶片。

7. 发明申请

US20090270637A1 PROCESS FOR PREPARATION OF TETRASUBSTITUTED 5-AZASPIRO[2.4]- HEPTANE DERIVATIVES AND OPTICALLY ACTIVE INTERMEDIATES THEREOF 失效
标题翻译：四唑衍生物的制备方法[2.4] - 丙氨酸衍生物及其光学活性中间体
公开(公告)号：US20090270637A1
公开(公告)日：2009-10-29
申请号：US12067737
申请日：2006-09-28
申请人： Hisashi Takahashi , Rie Miyauchi , Yasuyuki Takeda , Kazuo Kanai , Junichi Kuroyanagi , Satoshi Komoriya , Makoto Takemura
发明人： Hisashi Takahashi , Rie Miyauchi , Yasuyuki Takeda , Kazuo Kanai , Junichi Kuroyanagi , Satoshi Komoriya , Makoto Takemura
IPC分类号： C07D209/54
CPC分类号： C07D209/54 , C07D207/14 , C07D207/273 , C07D207/277 , C07D471/04
摘要： The present invention provides a method for effectively producing an optically active form of tetrasubstituted-5-azaspiro[2.4]heptane derivative, which serves as a useful production intermediate for quinolonecarboxylic acid antibacterial agents, and intermediates for the derivative. The present invention is directed to a method for producing a compound (VII) according to the following scheme.
摘要翻译：本发明提供了有效地制备作为喹诺酮羧酸抗菌剂的有用的生产中间体的四取代-5-氮杂螺[2.4]庚烷衍生物的光学活性形式的方法和该衍生物的中间体。本发明涉及根据下列方案制备化合物（Ⅶ）的方法。

8. 发明申请

US20070191356A1 Pyridobenzoxazine derivative 审中-公开
标题翻译：吡啶并苯并恶嗪衍生物
公开(公告)号：US20070191356A1
公开(公告)日：2007-08-16
申请号：US10587946
申请日：2005-02-01
申请人： Makoto Takemura , Hitoshi Ohki
发明人： Makoto Takemura , Hitoshi Ohki
IPC分类号： A61K31/535 , C07D265/38
CPC分类号： C07D498/06 , A23K20/111 , A23K20/195 , A23K50/80 , A23L3/3544 , A61K31/5383
摘要： A quinolone antimicrobial agent having potent antimicrobial activity against gram positive and gram negative bacteria and having high safety is provided. A compound represented by the following formula (1): [Chemical formula 1] [wherein, R1: hydrogen, alkyl, cycloalkyl, or substituted carbonyl derived from amino acid, peptide or tripeptide; R2: hydrogen, alkyl, or cycloalkyl; R3: hydrogen, amino, halogen, or alkyl; R4: hydrogen, phenyl, acetoxymethyl, pivaloyloxymethyl, ethoxycarbonyl, choline, dimethylaminoethyl, 5-indanyl, phthalidinyl, 5-alkyl-2-oxo-1,3-dioxol-4-ylmethyl, 3-acetoxy-2-oxobutyl, alkyl, alkoxymethyl, or phenylalkyl; X, X1, X2: hydrogen or halogen] or salt thereof, or a hydrate thereof; and antimicrobial agent and therapeutic agent for infections, each containing the compound, salt thereof or a hydrate thereof.
摘要翻译：提供了对革兰氏阳性和革兰氏阴性细菌具有强抗微生物活性并具有高安全性的喹诺酮类抗微生物剂。由下式（1）表示的化合物：[化学式1] [其中，R 1，H 2，氢，烷基，环烷基或衍生自氨基酸，肽或三肽的取代的羰基; R 2：氢，烷基或环烷基; 氢，氨基，卤素或烷基; 吡啶，二甲基氨基乙基，5-茚满基，邻苯二甲酰基，5-烷基-2-氧代-1,3-二氧杂环戊烯-4-基甲基，3-甲氧基羰基，乙酰氧基-2-氧代丁基，烷基，烷氧基甲基或苯基烷基; X，X 1，X 2：氢或卤素]或其盐或其水合物; 和抗微生物剂和感染治疗剂，各自含有化合物，其盐或其水合物。

9. 发明申请

US20060186450A1 Integrated high voltage capacitor and a method of manufacture therefor 审中-公开
标题翻译：集成式高压电容器及其制造方法
公开(公告)号：US20060186450A1
公开(公告)日：2006-08-24
申请号：US11249535
申请日：2005-10-13
申请人： David Larkin , Lily Springer , Makoto Takemura , Ashish Gokhale , Dhaval Saraiya
发明人： David Larkin , Lily Springer , Makoto Takemura , Ashish Gokhale , Dhaval Saraiya
IPC分类号： H01L29/94
CPC分类号： H01L29/94
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130).
摘要翻译：本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分绝缘体（130）包括层间介电层（135,138,143或148）。集成高压电容器还包括位于绝缘体（130）上方的第二电容器板（160）。

10. 发明授权

US06573260B1 Cycloalkyl-substituted aminomethylpyrrolidine derivatives 失效
标题翻译：环烷基取代的氨基甲基吡咯烷衍生物
公开(公告)号：US06573260B1
公开(公告)日：2003-06-03
申请号：US09856631
申请日：2001-05-24
申请人： Makoto Takemura , Hisashi Takahashi , Rie Miyauchi , Toshiyuki Takeda , Isao Hayakawa
发明人： Makoto Takemura , Hisashi Takahashi , Rie Miyauchi , Toshiyuki Takeda , Isao Hayakawa
IPC分类号： A61K314709
CPC分类号： C07D401/04
摘要： This invention provides a quinolone derivative which exerts strong antibacterial action upon various bacteria and has high safety, and it relates to a compound having a structure of formula (I), its salts and hydrates thereof: {R1 and R2: hydrogen, alkyl; n: 1 to 4; Q: following structure (Ia): [R3: alkyl, alkenyl, halogenoalkyl, cyclic alkyl, aryl, heteroaryl, alkoxyl, alkylamino; R4: hydrogen, alkylthio; R5: hydrogen, amino, hydroxyl, thiol, halogenomethyl, alkyl, alkenyl, alkynyl, alkoxyl; X1: halogen, hydrogen, A1: nitrogen, structure of formula (II): (X2: hydrogen, amino, halogen, cyano, halogenomethyl, halogenomethyl, alkyl, alkenyl, alkynyl, alkoxyl; R4 and R3 or X2 and R3 may together form a cyclic structure; Y: hydrogen, various ester forming groups]}.
摘要翻译：本发明提供了一种喹诺酮衍生物，其对各种细菌具有强烈的抗菌作用并具有高度的安全性，它涉及具有式（I）结构的化合物及其盐和水合物：{R1和R2：氢，烷基; n：1到4; Q：以下结构（Ia）：[R3：烷基，烯基，卤代烷基，环烷基，芳基，杂芳基，烷氧基，烷基氨基; R4：氢，烷硫基; R5：氢，氨基，羟基，硫醇，卤代甲基，烷基，烯基，炔基，烷氧基; X1：卤素，氢，A1：氮，式（II）的结构：（X2：氢，氨基，卤素，氰基，卤代甲基，卤代甲基，烷基，烯基，炔基，烷氧基; R4和R3或X2和R3可以一起形成环状结构; Y：氢，各种酯形成基团]}。

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