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    • 4. 发明授权
    • Humidity sensor of capacitance change type
    • 电容变化型湿度传感器
    • US4217623A
    • 1980-08-12
    • US912714
    • 1978-06-05
    • Atsushi NishinoAkihiko Yoshida
    • Atsushi NishinoAkihiko Yoshida
    • G01N27/22H01G7/00
    • G01N27/225
    • A device comprising a metal substrate serving as a first electrode, a dielectric oxide film formed by oxidation of a surface region of the substrate and a second electrode layer formed porously on the dielectric oxide film. Microscopically, the second electrode layer is only partially in contact with the dielectric oxide film. Accordingly moisture adsorbed through the second electrode layer covers uncoated regions of the dielectric film surface to a variable extent in dependence on humidity, resulting in a change in the electrostatic capacitance across the electrodes. Preferably the device comprises a semiconducting metal oxide layer as an innermost part of the second electrode layer.
    • 包括用作第一电极的金属基板,通过氧化基板的表面区域形成的电介质氧化物膜和在电介质氧化物膜上形成的第二电极层的装置。 在显微镜下,第二电极层仅部分地与电介质氧化膜接触。 因此,通过第二电极层吸收的水分根据湿度覆盖电介质膜表面的未涂覆区域到可变程度,导致跨过电极的静电电容的变化。 优选地,该器件包括作为第二电极层的最内部的半导体金属氧化物层。
    • 9. 发明授权
    • Apparatus for humidity detection
    • 湿度检测装置
    • US4282480A
    • 1981-08-04
    • US35331
    • 1979-05-01
    • Katsuyuki FujitoSeiro HasegawaTakehiko UnoguchiAtsushi NishinoAkihiko Yoshida
    • Katsuyuki FujitoSeiro HasegawaTakehiko UnoguchiAtsushi NishinoAkihiko Yoshida
    • G01N27/04G01N27/22G01R27/26
    • G01R27/2617G01N27/046G01N27/225
    • Apparatus for humidity detection comprises a humidity sensing element, the electrostatic capacitance of which varies in accordance with the ambient humidity, a fixed capacitor, first and second pulse generating circuits respectively responsive to the sensing element and the capacitor, and a computing circuit responsive to pulses from the first and second pulse generating circuit. The sensing element and the fixed capacitor are respectively charged via resistors to produce first and second pulses in accordance with voltage across the sensing element and the capacitor. The difference between the widths of the first and second pulses is detected in the computing circuit to produce an output pulse indicative of the relative humidity, thereby compensating for undesirable infuenece due to dielectric loss in the sensing element so as to accurately measure humidity irrespectively of the ambient temperature.
    • 用于湿度检测的装置包括其静电电容根据环境湿度变化的湿度感测元件,分别响应于感测元件和电容器的固定电容器,第一和第二脉冲发生电路以及响应于脉冲的计算电路 从第一和第二脉冲发生电路。 感测元件和固定电容器分别通过电阻器充电,以根据感测元件和电容器两端的电压产生第一和第二脉冲。 在计算电路中检测第一和第二脉冲的宽度之间的差异,以产生指示相对湿度的输出脉冲,从而补偿由于感测元件中的介电损耗引起的不期望的不均匀性,从而精确地测量湿度,而不管 环境温度。
    • 10. 发明授权
    • Humidity sensing element of electric capacitance change type and method
of producing same
    • 电容变化型湿度传感元件及其制造方法
    • US4276128A
    • 1981-06-30
    • US14382
    • 1979-02-21
    • Atsushi NishinoAkihiko YoshidaNobukuni Ogino
    • Atsushi NishinoAkihiko YoshidaNobukuni Ogino
    • G01N27/22G01R27/26H01G9/05
    • G01N27/225G01R27/2605Y10T29/417
    • A device comprising a dielectric oxide film formed by anodization of a surface region of a valve metal body, a semiconductive metal oxide layer porously formed on the dielectric oxide film, and a gas permeable electrode layer formed on the semiconductive metal oxide layer with the interposal of a gas permeable carbon layer therebetween. The semiconductive metal oxide layer is formed by pyrolysis of a metal salt solution so as to be, microscopically, only partially in contact with the dielectric oxide film. After forming of the electrode layer, the device is immersed in boiling water and/or kept in a high temperature high humidity atmosphere for an adequate amount of time to stabilize the semiconductive metal oxide layer, resulting in that the semiconductive metal oxide layer has a multiplicity of microscopic crevices and that the device becomes quite stable in the relation between humidity and electrostatic capacitance of the device.
    • 一种包括通过阳极氧化阀金属体的表面区域形成的电介质氧化膜的装置,在电介质氧化膜上形成的半导体金属氧化物层,以及形成在半导体金属氧化物层上的透气电极层, 它们之间的透气性碳层。 半导体金属氧化物层是通过金属盐溶液的热解形成的,以便在显微镜下仅部分地与电介质氧化膜接触。 在形成电极层之后,将装置浸入沸水中和/或在高温高湿气氛中保持足够的时间以稳定半导体金属氧化物层,导致半导体金属氧化物层具有多重性 的微观裂缝,并且器件在器件的湿度和静电电容之间的关系变得相当稳定。