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1. 发明申请

US20090072268A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090072268A1
公开(公告)日：2009-03-19
申请号：US12020959
申请日：2008-01-28
申请人： Kenji Hatori , Atsushi Narazaki
发明人： Kenji Hatori , Atsushi Narazaki
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0834 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/42372 , H01L29/42376 , H01L29/66333 , H01L29/7395 , H01L29/7816
摘要： A semiconductor device includes a semiconductor substrate having a main surface and a semiconductor element having an insulated gate field effect portion formed in the semiconductor substrate. The semiconductor element includes an n− region, an n-type source region, a p-type base region, an n+ region, and a gate electrode. The n− region and the n-type source region are formed in the main surface. The p-type base region is formed in the main surface adjacent to the n-type source region. The n+ region is formed in the main surface adjacent to the p-type base region and opposed to the n-type source region with the p-type base region being interposed, and has an impurity concentration higher than the n− region. The n− region is formed in the main surface adjacent to the p-type base region and to the n+ region.
摘要翻译：半导体器件包括具有主表面的半导体衬底和形成在半导体衬底中的具有绝缘栅场效应部分的半导体元件。半导体元件包括n区，n型源极区，p型基极区域，n +区域和栅电极。在主表面上形成n区和n型源极区。 p型基极区域形成在与n型源极区域相邻的主表面上。在与p型基极区相邻的主表面上形成n +区，与插入有p型基极区的n型源极区相比，具有比n区高的杂质浓度。 n区形成在与p型基区相邻的主表面和n +区中。

2. 发明授权

US06285058B1 Insulated gate semiconductor device and method of manufacturing the same 有权
标题翻译：绝缘栅半导体器件及其制造方法
公开(公告)号：US06285058B1
公开(公告)日：2001-09-04
申请号：US09485702
申请日：2000-02-28
申请人： Atsushi Narazaki , Hidetoshi Souno , Yasunori Yamashita
发明人： Atsushi Narazaki , Hidetoshi Souno , Yasunori Yamashita
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/4232 , H01L29/4238
摘要： The present invention relates to an insulated gate semiconductor device and a method of manufacturing the same, and more particularly to an improvement for enhancing a gate breakdown voltage. In order to achieve the object, gate wirings (9), (10) and (13) are provided to keep away from an upper end (UE) of an edge of a gate trench (6) along its longitudinal direction. More specifically, the gate wiring (9) coupled integrally with an upper surface of a gate electrode (7) is formed apart from the upper end (UE) and the gate wiring (10) is formed on an insulating film (4) also apart from the upper end (UE). The two gate wirings (9) and (10) are connected to each other through the gate wiring (13) formed on a BPSG layer (11). Moreover, an upper face of the gate electrode (7) is positioned on the same level as an upper main surface of a semiconductor substrate (90) or therebelow in the vicinity of the upper end (UE). Consequently, a concentration of an electric field generated in insulating films (8) and (17) covering the upper end (UE) can be relieved or eliminated.
摘要翻译：绝缘栅半导体器件及其制造方法技术领域本发明涉及绝缘栅半导体器件及其制造方法，更具体地，涉及提高栅极击穿电压的改进。为了实现该目的，提供了栅极布线（9），（10）和（13）以沿着其纵向方向远离栅极沟槽（6）的边缘的上端（UE）。更具体地，与栅电极（7）的上表面一体地结合的栅极布线（9）形成为与上端（UE）分开，并且栅极布线（10）也形成在也分开的绝缘膜（4）上来自上端（UE）。两个栅极布线（9）和（10）通过形成在BPSG层（11）上的栅极布线（13）相互连接。此外，栅电极（7）的上表面位于与半导体衬底（90）的上主表面或其上端附近相同的高度。因此，可以减轻或消除在覆盖上端（UE）的绝缘膜（8）和（17）中产生的电场的浓度。

3. 发明申请

US20120309117A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120309117A1
公开(公告)日：2012-12-06
申请号：US13358868
申请日：2012-01-26
申请人： Yuichiro SUZUKI , Atsushi Narazaki , Yoshiaki Terasaki
发明人： Yuichiro SUZUKI , Atsushi Narazaki , Yoshiaki Terasaki
IPC分类号： H01L21/66
CPC分类号： H01L29/0847 , H01L22/12 , H01L22/20 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/0834 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L2224/29101 , H01L2224/29339 , H01L2224/32245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/4847 , H01L2224/4911 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/0781 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device wherein a semiconductor element is sealed with mold resin, a MOS structure is on an upper side of the semiconductor chip, and a PN junction region is on a back side of the semiconductor chip, comprises: obtaining an in-plane distribution of impurity concentration of the PN junction region in the semiconductor chip before encapsulation so that an in-plane distribution of breakdown voltage and leakage current of the semiconductor chip become uniform after encapsulation; forming the PN junction region having the obtained in-plane distribution of impurity concentration on the back side of the semiconductor chip; and sealing the semiconductor chip with the resin after forming the PN junction region.
摘要翻译：一种半导体器件的制造方法，其中半导体元件用模制树脂密封，MOS结构位于半导体芯片的上侧，并且PN结区域位于半导体芯片的背面，包括：在封装之前在半导体芯片中的PN结区域的杂质浓度的平面分布，使得在封装之后半导体芯片的击穿电压和漏电流的面内分布变得均匀; 在半导体芯片的背面上形成具有所获得的杂质浓度的面内分布的PN结区域; 并在形成PN结区域之后用树脂密封半导体芯片。

4. 发明授权

US07741655B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07741655B2
公开(公告)日：2010-06-22
申请号：US12020959
申请日：2008-01-28
申请人： Kenji Hatori , Atsushi Narazaki
发明人： Kenji Hatori , Atsushi Narazaki
IPC分类号： H01L29/739
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0834 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/42372 , H01L29/42376 , H01L29/66333 , H01L29/7395 , H01L29/7816
摘要： A semiconductor device includes a semiconductor substrate having a main surface and a semiconductor element having an insulated gate field effect portion formed in the semiconductor substrate. The semiconductor element includes an n− region, an n-type source region, a p-type base region, an n+ region, and a gate electrode. The n− region and the n-type source region are formed in the main surface. The p-type base region is formed in the main surface adjacent to the n-type source region. The n+ region is formed in the main surface adjacent to the p-type base region and opposed to the n-type source region with the p-type base region being interposed, and has an impurity concentration higher than the n− region. The n− region is formed in the main surface adjacent to the p-type base region and to the n+ region.
摘要翻译：半导体器件包括具有主表面的半导体衬底和形成在半导体衬底中的具有绝缘栅场效应部分的半导体元件。半导体元件包括n区，n型源极区，p型基极区域，n +区域和栅电极。在主表面上形成n区和n型源极区。 p型基极区域形成在与n型源极区域相邻的主表面上。在与p型基极区相邻的主表面上形成n +区，与插入有p型基极区的n型源极区相比，具有比n区高的杂质浓度。 n区形成在与p型基区相邻的主表面和n +区中。

5. 发明申请

US20090014753A1 POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20090014753A1
公开(公告)日：2009-01-15
申请号：US11937725
申请日：2007-11-09
申请人： Yoshiaki Hisamoto , Atsushi Narazaki , Hitoshi Uemura
发明人： Yoshiaki Hisamoto , Atsushi Narazaki , Hitoshi Uemura
IPC分类号： H01L29/00 , H01L21/425
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0638 , H01L29/0834 , H01L29/402
摘要： A power semiconductor device of the present invention has an active region and an electric field reduction region and includes: an emitter region of a first conductivity type; a base region of a second conductivity type in contact with the emitter region; an electrical strength providing region of the first conductivity type in contact with the base region; a collector region of the second conductivity type in contact with the electrical strength providing region; and a collector electrode in contact with the collector region; wherein the collector region is disposed on both a active region and a electric field reduction region each containing a dopant of the second conductivity type, and the collector region disposed on the electric field reduction region includes a region having a lower density of carriers of the second conductivity type than the collector region disposed on the active region.
摘要翻译：本发明的功率半导体器件具有有源区和电场还原区，包括：第一导电型的发射极区; 与发射极区域接触的第二导电类型的基极区域; 所述第一导电类型的电强度提供区域与所述基极区域接触; 与所述电强度提供区域接触的所述第二导电类型的集电极区域; 以及与集电极区域接触的集电极; 其特征在于，所述集电极区域配置在各自含有所述第二导电型掺杂剂的有源区域和电场还原区域上，并且设置在所述电场还原区域上的所述集电极区域包括具有较低密度的载流子的区域，导电类型比设置在有源区上的集电极区域。

6. 发明授权

US07319264B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07319264B2
公开(公告)日：2008-01-15
申请号：US11276668
申请日：2006-03-09
申请人： Atsushi Narazaki
发明人： Atsushi Narazaki
IPC分类号： H01L29/00 , H01L27/102 , H01L27/082 , H01L29/70 , H01L23/50
CPC分类号： H01L23/482 , H01L23/4824 , H01L23/49562 , H01L24/34 , H01L24/37 , H01L24/73 , H01L2224/37147 , H01L2224/37599 , H01L2224/45124 , H01L2224/48463 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： A semiconductor device has a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof. The semiconductor device includes a first main electrode provided on the front surface, a second main electrode provided on a back surface, and a metal film provided so as to cover at least a portion of a surface of the first main electrode and for soldering the lead terminal thereto. Here, the metal film includes a plurality of opening portions through which the surface of the first main electrode is exposed.
摘要翻译：半导体器件具有能够将引线端子直接连接到其表面上的电极的结构。半导体器件包括设置在前表面的第一主电极，设置在背面上的第二主电极和设置成覆盖第一主电极表面的至少一部分并用于焊接引线的金属膜终端。这里，金属膜包括第一主电极的表面露出的多个开口部。

7. 发明授权

US06495863B2 Semiconductor device having diode for input protection circuit of MOS structure device 失效
标题翻译：具有用于MOS结构器件的输入保护电路的二极管的半导体器件
公开(公告)号：US06495863B2
公开(公告)日：2002-12-17
申请号：US09883201
申请日：2001-06-19
申请人： Atsushi Narazaki
发明人： Atsushi Narazaki
IPC分类号： H01L2974
CPC分类号： H01L29/66106 , H01L24/05 , H01L27/0255 , H01L29/7808 , H01L29/866 , H01L2224/45124 , H01L2924/00014 , H01L2924/12035 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/48
摘要： An insulator film provided on a region for arranging a Zener diode has a plurality of groove portions successively arranged in a direction D1 of extension of each semiconductor region forming the diode. Each groove potion extends in a width direction D2 of each semiconductor region, and has a depth T3. Each semiconductor region is arranged on the upper surface of the insulator film. Therefore, it follows that each semiconductor region has a plurality of irregular shapes arranged in the direction D1 of extension and the Zener diode has a peripheral length not only in the transverse direction D1 but also in a vertical direction D3, so that a p-n junction area in the Zener diode is increased. Thus, parasitic resistance of an input protection Zener diode is reduced for improving a gate insulator film protective function of the diode.
摘要翻译：设置在用于布置齐纳二极管的区域上的绝缘体膜具有多个凹槽部分，其连续地布置在形成二极管的每个半导体区域的延伸方向D1上。每个沟槽部分在每个半导体区域的宽度方向D2上延伸，并且具有深度T3。每个半导体区域布置在绝缘膜的上表面上。因此，每个半导体区域具有沿着延伸方向D1布置的多个不规则形状，并且齐纳二极管不仅在横向方向D1上而且在垂直方向D3上具有周长，使得pn结面积在齐纳二极管中增加。因此，为了改善二极管的栅极绝缘膜保护功能，降低了输入保护齐纳二极管的寄生电阻。

8. 发明授权

US08884383B2 Semiconductor device and method of testing the same 有权
标题翻译：半导体器件及其测试方法
公开(公告)号：US08884383B2
公开(公告)日：2014-11-11
申请号：US13272512
申请日：2011-10-13
申请人： Atsushi Narazaki
发明人： Atsushi Narazaki
IPC分类号： H01L29/84 , H01L21/66 , G01R31/28 , H01L23/00 , H01L23/31
CPC分类号： H01L22/14 , G01L1/18 , G01L5/0047 , G01R31/2884 , H01L22/12 , H01L23/3121 , H01L24/32 , H01L24/73 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/014 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip with a gate electrode, and a stress detecting element placed on a surface of the semiconductor chip, and which detects stress applied to the surface. The semiconductor device controls a control signal to be applied to the gate electrode in response to stress detected by the stress detecting element. The stress detecting element is preferably provided as a first stress detecting element which detects stress applied to a central portion of the semiconductor chip in plan view. The stress detecting element is preferably provided as a second stress detecting element which detects stress applied to a circumferential portion of the semiconductor chip in plan view.
摘要翻译：半导体器件包括具有栅电极的半导体芯片和放置在半导体芯片的表面上的应力检测元件，并且检测施加到表面的应力。半导体器件响应于由应力检测元件检测到的应力来控制施加到栅电极的控制信号。应力检测元件优选地设置为在平面图中检测施加到半导体芯片的中心部分的应力的第一应力检测元件。应力检测元件优选地设置为在平面图中检测施加到半导体芯片的圆周部分的应力的第二应力检测元件。

9. 发明授权

US08618604B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08618604B2
公开(公告)日：2013-12-31
申请号：US12848411
申请日：2010-08-02
申请人： Atsushi Narazaki
发明人： Atsushi Narazaki
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/0274 , H01L21/3083 , H01L29/0696 , H01L29/4238 , H01L29/66734 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer has a main surface. A main chip region is formed on the main surface. A sub-chip region is smaller in area than the main chip region, and positioned on an edge side of the semiconductor wafer relative to the main chip region. The sub-chip region is identical to the main chip region in design pattern. Accordingly, a semiconductor device in which occurrence of a pattern failure at the edge of the wafer can be prevented when chips are arranged in the surface of the semiconductor wafer and a method of manufacturing the same can be obtained.
摘要翻译：半导体晶片具有主表面。主芯片区域形成在主表面上。子芯片区域的面积小于主芯片区域，并且位于半导体晶片相对于主芯片区域的边缘侧。子芯片区域与设计图案中的主芯片区域相同。因此，当芯片布置在半导体晶片的表面中时，可以防止在晶片边缘发生图案故障的半导体器件及其制造方法。

10. 发明授权

US08519733B2 Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device 有权
标题翻译：测量半导体元件的特性的方法和制造半导体器件的方法
公开(公告)号：US08519733B2
公开(公告)日：2013-08-27
申请号：US13044985
申请日：2011-03-10
申请人： Atsushi Narazaki
发明人： Atsushi Narazaki
IPC分类号： G01R31/26 , G01R31/02
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A measurement terminal is arranged at an edge of a semiconductor wafer to be apart from a gate electrode and a source electrode formed in a surface portion on one side in a thickness direction of a semiconductor wafer so that an electrode contact portion is in contact with a drain electrode on the other side in the thickness direction of the semiconductor wafer and that a terminal contact portion is exposed to the one side in the thickness direction of the semiconductor wafer. A probe terminal is brought into contact with the terminal contact portion of the measurement terminal and the probe terminal is brought into contact with the gate electrode and the source electrode, to thereby measure electrical characteristics of a MOSFET.
摘要翻译：测量端子布置在半导体晶片的边缘处，以与半导体晶片的厚度方向上形成在一侧的表面部分中的栅电极和源电极分开，使得电极接触部分与电极接触部分接触在半导体晶片的厚度方向上的另一侧的漏极电极，并且端子接触部分在半导体晶片的厚度方向上暴露于一侧。探针端子与测量端子的端子接触部分接触，并且探针端子与栅电极和源电极接触，从而测量MOSFET的电特性。

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