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    • 5. 发明授权
    • Emitting device and manufacturing method therefor
    • 发光装置及其制造方法
    • US08653501B2
    • 2014-02-18
    • US13273165
    • 2011-10-13
    • Tetsuya TakeuchiTatsuro UchidaMitsuhiro Ikuta
    • Tetsuya TakeuchiTatsuro UchidaMitsuhiro Ikuta
    • H01L33/04
    • H01L33/34H01L33/06H01L33/16
    • Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
    • 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括:具有电位限制结构的发射层,包括:包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域,并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料,其中:所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。
    • 10. 发明申请
    • PROCESS FOR PRODUCING SURFACE-EMITTING LASER AND PROCESS FOR PRODUCING SURFACE-EMITTING LASER ARRAY
    • 生产表面发射激光的工艺和生产表面发射激光阵列的方法
    • US20110165712A1
    • 2011-07-07
    • US12983536
    • 2011-01-03
    • Tatsuro Uchida
    • Tatsuro Uchida
    • H01L21/302
    • H01S5/18344H01S5/2081
    • Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.
    • 提供了能够以高精度将表面起伏结构的中心轴与电流限制结构的中心轴对准的表面发射激光器的制造,以减少在制造期间的表面损伤。 具有提供在层叠半导体层和台面结构上的凸起的激光器的制造,该方法包括以下步骤:在该层上形成具有第一图案的第一电介质膜和第一抗蚀剂膜之一,用于限定 台面和用于限定浮雕然后形成另一个膜的第二图案; 形成第二抗蚀剂膜以覆盖第二图案并暴露第一图案; 以及通过使用第二抗蚀剂膜去除第一图案下的层来形成台面。