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1. 发明专利

JP2009033162A Lithographic apparatus, reflective member and method of irradiating underside of liquid supply system 有权
标题翻译：液晶显示装置，反射构件和液体供应系统下的辐射方法
公开(公告)号：JP2009033162A
公开(公告)日：2009-02-12
申请号：JP2008187824
申请日：2008-07-18
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： ANTONIUS LEENDERS MARTINUS HEN , VAN DOMMELEN YOURI JOHANNES LA , JANSEN HANS , WATSO ROBERT DOUGLAS , DE JONG ANTHONIUS MARTINUS COR , CROMWIJK JAN WILLEM , THOMAS LAURSEN
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70925 , G03F7/2041 , G03F7/70341
摘要： PROBLEM TO BE SOLVED: To prevent or reduce contamination of an immersion lithographic apparatus. SOLUTION: The lithographic apparatus that includes a reflector for reflecting a cleaning beam of radiation projected through a projection system onto an underside of a liquid retrieval system is disclosed. The construction of the reflector is also disclosed as is a method for irradiating the underside of a liquid supply system used for cleaning. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：防止或减少浸没式光刻设备的污染。公开了一种光刻设备，其包括用于将通过投影系统投射的清洁光束反射到液体回收系统的下侧的反射器。还公开了用于照射用于清洁的液体供应系统的下侧的方法。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008078648A Lithographic apparatus, and device manufacturing method 有权
标题翻译： LITHOGRAPHIC设备和设备制造方法
公开(公告)号：JP2008078648A
公开(公告)日：2008-04-03
申请号：JP2007237470
申请日：2007-09-13
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： STREEFKERK BOB , VAN DOMMELEN YOURI JOHANNES LA , MOERMAN RICHARD , GROUWSTRA CEDRIC DESIRE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341 , G03F7/70425
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and an operation method which reduce defects caused by using an immersion liquid in an immersion liquid lithographic apparatus. SOLUTION: A lithographic apparatus comprises: a support configured to support a patterning device, where the patterning device can impart a radiation beam with a pattern in its cross-section, to form a patterned radiation beam; a substrate table configured to hold a substrate; a liquid supply system configured to provide a liquid to a local area of a top surface of a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate through the liquid; and a controller adapted to coordinate movement of the substrate table and the support during imaging of a line of dies across the substrate and this is accomplished by movement of the line of dies under the projection system backwards and/or forwards only in a direction substantially parallel to a first direction, where the first direction is in a plane substantially parallel to the top surface. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少在浸没液体光刻设备中使用浸没液体引起的缺陷的设备和操作方法。光刻设备包括：构造成支撑图案形成装置的支撑件，其中图案形成装置可以在其横截面中赋予具有图案的辐射束，以形成图案化的辐射束; 被配置为保持基板的基板台; 液体供应系统，被配置为向衬底的顶表面的局部区域提供液体; 投影系统，被配置为通过液体将图案化的辐射束投影到基板的目标部分上; 以及控制器，其适于在穿过衬底的一行模具成像期间协调衬底台和支撑件的运动，并且这通过在投影系统下方的模具线在大致平行的方向上向后和/或向前移动来实现到第一方向，其中第一方向在基本上平行于顶表面的平面中。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2009010349A Method of inspecting substrate, and method of preparing substrate for lithography 有权
标题翻译：检查基板的方法，以及制备基板的方法
公开(公告)号：JP2009010349A
公开(公告)日：2009-01-15
申请号：JP2008132283
申请日：2008-05-20
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VANGHELUWE RIK TEODOOR , VAN DOMMELEN YOURI JOHANNES LA , QUAEDACKERS JOHANNES A , GROUWSTRA CEDRIC DESIRE , KNAAPEN THIJS EGIDIUS JOHANNES , DAVERVELD RALF MARTINUS MARINU , ROMMERS JEROEN HUBERT
IPC分类号： H01L21/027 , G01B11/00 , G01B11/24 , G01B11/30 , G03F7/20
CPC分类号： G03F7/70608
摘要： PROBLEM TO BE SOLVED: To provide a method for reducing the risk of contamination of immersion liquid and components of the apparatus. SOLUTION: A method of inspecting a substrate with first and second layers thereon is disclosed. This method includes directing a beam of electromagnetic radiation at an acute angle towards an edge of the layers, detecting scattered and/or reflected electromagnetic radiation, and establishing, from the results of the detecting, whether an edge of the second layer overlaps an edge of the first layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低浸没液体和装置的部件的污染风险的方法。公开了一种在其上检测具有第一层和第二层的衬底的方法。该方法包括将电磁辐射束以锐角朝向层的边缘引导，检测散射和/或反射的电磁辐射，以及从检测结果建立第二层的边缘是否与第一层。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009267404A Lithographic apparatus and method of operating the apparatus 有权
标题翻译：平面设备和操作设备的方法
公开(公告)号：JP2009267404A
公开(公告)日：2009-11-12
申请号：JP2009100474
申请日：2009-04-17
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： WATSO ROBERT DOUGLAS , VAN DOMMELEN YOURI JOHANNES LA , JACOBS JOHANNES HENRICUS WILHE , JANSEN HANS , ANTONIUS LEENDERS MARTINUS HEN , JEROEN JOHANNES SOPHIA MARIA M , STEIJAART PETER PAUL , DE JONG ANTHONIUS MARTINUS COR , VAN DE WINKEL JIMMY MATHEUS WI , DA PAZ SENA JOAO PAULO , VAN DER LEE MAURICE MARTINUS J , VAN LIER HENRICUS MARTINUS DOR , TANASA GHEORGHE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341 , G03F7/70925
摘要： PROBLEM TO BE SOLVED: To disclose a lithographic projection apparatus including a cleaning station. SOLUTION: Several embodiments of a cleaning station are disclosed. In an embodiment, measures are taken to avoid contact of a cleaning fluid with a final element of a projection system. In an embodiment, measures are taken to avoid foaming of the cleaning fluid. The use of a thermally isolated island is also disclosed as well as its optimal position. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：公开一种包括清洁站的光刻投影设备。解决方案：公开了清洁站的几个实施例。在一个实施例中，采取措施以避免清洁流体与投影系统的最终元件接触。在一个实施例中，采取措施以避免清洁流体的起泡。还公开了热隔离岛的使用以及其最佳位置。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009204621A Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
标题翻译：用于角度分辨光谱光刻特征的方法和装置
公开(公告)号：JP2009204621A
公开(公告)日：2009-09-10
申请号：JP2009134465
申请日：2009-06-03
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMANS HENRICUS PETRUS MARI , VAN DER SOHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MAR
IPC分类号： G01N21/956 , G01B11/02 , G03F7/20 , H01L21/027
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring overlay and grating shape parameters using a lithographic technology and measurement of an angle-resolved spectrum in a pupil plane of a high numerical aperture lens during the manufacture of a device. SOLUTION: An apparatus and a method are provided for determining a property of a substrate by measuring, in the pupil plane of the high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在制造装置期间使用光刻技术测量覆盖层和光栅形状参数的方法以及高数值孔径透镜的光瞳平面中的角度分辨光谱的测量。解决方案：提供了一种用于通过在高数值孔径透镜的光瞳平面中测量作为辐射从基板反射的结果的角度分辨光谱来确定基板的性质的装置和方法。该属性可以是角度和波长相关的，并且可以包括TM-和TE-偏振光的强度及其相对相位差。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006060214A Method and apparatus of angular-resolved spectroscopic lithography characterization 有权
标题翻译：角分辨光谱光刻特性的方法与装置
公开(公告)号：JP2006060214A
公开(公告)日：2006-03-02
申请号：JP2005235188
申请日：2005-08-15
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMANS HENRICUS PETRUS MARI , VAN DER SOHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MAR
IPC分类号： H01L21/027 , G01N21/956 , G03F7/20
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： PROBLEM TO BE SOLVED: To provide a method of measuring overlay and trellis-shape parameter using lithography technology and angle-resolved spectrum measurement in a pupil plane of a high numerical aperture of lens during a manufacture of a device. SOLUTION: Apparatus and the method which determine a property of a substrate by measuring an angle-resolved spectrum as a result of radiation being reflected by the substrate in the pupil plane of a high numerical aperture of lens. The property is dependent on angle and wavelength, and includes the intensity of TM- and TE-polarized light, and their relative phase difference. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用光刻技术测量覆盖层和网格形状参数的方法，以及在器件制造期间在高数值孔径的光瞳平面中的角度分辨光谱测量。解决方案：通过测量作为辐射的结果的角度分辨的光谱来确定基板的性质的装置和方法，所述角度分辨光谱由透镜的高数值孔径的光瞳平面中的基板反射。该属性取决于角度和波长，并且包括TM和TE偏振光的强度及其相对相位差。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

SG120263A1 Method and apparatus for angular-resolved spectroscopic lithography characterization 未知
公开(公告)号：SG120263A1
公开(公告)日：2006-03-28
申请号：SG200505153
申请日：2005-08-12
申请人： ASML NETHERLANDS BV
发明人： DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMAN HENRICUS PETRUS MARIA , VAN DER SCHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MAR
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.

8. 发明专利

SG139763A1 METHOD AND APPARATUS FOR ANGULAR-RESOLVED SPECTROSCOPIC LITHOGRAPHY CHARACTERIZATION 未知
公开(公告)号：SG139763A1
公开(公告)日：2008-02-29
申请号：SG2008007890
申请日：2005-08-12
申请人： ASML NETHERLANDS BV
发明人： DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMANS HENRICUS PETRUS MARI , VAN DER SCHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MAR
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.

9. 发明专利

SG141385A1 LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 未知
公开(公告)号：SG141385A1
公开(公告)日：2008-04-28
申请号：SG2007087778
申请日：2007-09-13
申请人： ASML NETHERLANDS BV
发明人： BOB STREEFKERK , VAN DOMMELEN YOURI JOHANNES LA , RICHARD MOERMAN , GROUWSTRA CEDRIC DESIRE
摘要： Lithographic Apparatus and Device Manufacturing Method A path which a substrate should take under the projection system during immersion lithography imaging of a plurality of dies on the top surface of the substrate is disclosed. [Fig.10]

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