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1. 发明授权

US06562729B2 Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit 有权
公开(公告)号：US06562729B2
公开(公告)日：2003-05-13
申请号：US10171700
申请日：2002-06-14
申请人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
发明人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
IPC分类号： H01L2131
CPC分类号： H01L21/823462
摘要： Silicon nitride gate insulators for digital transistors and silicon dioxide gate insulators for analog transistors of a hybrid integrated circuit (IC) are formed in a single integrated fabrication process. A first area of a silicon substrate of the IC is exposed while a second area is initially covered by a silicon dioxide layer. A layer of silicon nitride is formed on the exposed first area while the initial silicon dioxide layer inhibits the formation of silicon nitride on the second area. Thereafter the initial silicon dioxide layer is removed from the second area to allow a new silicon dioxide layer to be formed there from the exposed silicon substrate. The silicon dioxide layer shields against the adverse influences from silicon nitride formation and permits the initial silicon dioxide layer to be removed by etching. The silicon nitride layer shields against the adverse influences of oxidizing new silicon dioxide layer. A slight, beneficial silicon dioxide interface is created between the silicon nitride and the silicon substrate as a result of oxidizing the new layer of silicon dioxide.

2. 发明授权

US06436845B1 Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit 有权
公开(公告)号：US06436845B1
公开(公告)日：2002-08-20
申请号：US09723516
申请日：2000-11-28
申请人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
发明人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
IPC分类号： H01L2131
CPC分类号： H01L21/823462
摘要： Silicon nitride gate insulators for digital transistors and silicon dioxide gate insulators for analog transistors of a hybrid integrated circuit (IC) are formed in a single integrated fabrication process. A first area of a silicon substrate of the IC is exposed while a second area is initially covered by a silicon dioxide layer. A layer of silicon nitride is formed on the exposed first area while the initial silicon dioxide layer inhibits the formation of silicon nitride on the second area. Thereafter the initial silicon dioxide layer is removed from the second area to allow a new silicon dioxide layer to be formed there from the exposed silicon substrate. The silicon dioxide layer shields against the adverse influences from silicon nitride formation and permits the initial silicon dioxide layer to be removed by etching. The silicon nitride layer shields against the adverse influences of oxidizing new silicon dioxide layer. A slight, beneficial silicon dioxide interface is created between the silicon nitride and the silicon substrate as a result of oxidizing the new layer of silicon dioxide.

3. 发明授权

US06586814B1 Etch resistant shallow trench isolation in a semiconductor wafer 失效
标题翻译：在半导体晶片中进行耐腐蚀浅沟槽隔离
公开(公告)号：US06586814B1
公开(公告)日：2003-07-01
申请号：US09735084
申请日：2000-12-11
申请人： Rajiv Patel , David Chan , Arvind Kamath , Ken Rafftesaeth , Venkatesh P. Gopinath
发明人： Rajiv Patel , David Chan , Arvind Kamath , Ken Rafftesaeth , Venkatesh P. Gopinath
IPC分类号： H01L2900
CPC分类号： H01L21/76224
摘要： A shallow isolating trench is formed in a semiconductor wafer between active component areas to electrically isolate the active components from each other. The isolating trench is primarily formed of an insulating material, such as an oxide, in a recess formed into the wafer. An etch resistant material, such as BTBAS nitride, is placed over the insulating material in the recess. The etch resistant material protects the insulating material from erosion due to subsequent semiconductor fabrication process steps, so the integrity of the isolating trench and the planarity of the wafer are generally maintained.
摘要翻译：在活性组分区域之间的半导体晶片中形成浅隔离沟槽，以将活性组分彼此电隔离。隔离沟槽主要由形成在晶片中的凹部中的绝缘材料（例如氧化物）形成。诸如BTBAS氮化物的耐蚀刻材料放置在凹槽中的绝缘材料上。耐蚀刻材料保护绝缘材料免受由于随后的半导体制造工艺步骤的侵蚀，因此通常保持隔离沟槽的完整性和晶片的平面性。

4. 发明授权

US06656805B2 METHOD OF REDUCING SILICON OXYNITRIDE GATE INSULATOR THICKNESS IN SOME TRANSISTORS OF A HYBRID INTEGRATED CIRCUIT TO OBTAIN INCREASED DIFFERENTIAL IN GATE INSULATOR THICKNESS WITH OTHER TRANSISTORS OF THE HYBRID CIRCUIT 失效
公开(公告)号：US06656805B2
公开(公告)日：2003-12-02
申请号：US10304631
申请日：2002-11-26
申请人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
发明人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
IPC分类号： H01L21336
CPC分类号： H01L21/823462
摘要： A relatively thin gate insulator of a digital switching transistor is formed from a layer of silicon oxynitride which was initially formed by implanting nitrogen atoms in a silicon substrate and oxidizing the nitrogen and silicon. It has been discovered that an outer layer of silicon dioxide is formed as a part of the silicon oxynitride layer. Removing this outer layer of silicon dioxide from the silicon oxynitride layer leaves a thin remaining layer of substantially-only silicon oxynitride as the gate insulator. Thinner gate insulators of approximately 15-21 angstroms, for example, can be formed from a grown thickness of 60 angstroms, for example. Gate insulators for digital and analog transistors may be formed simultaneously with a greater differential in thickness been possible by using conventional nitrogen implantation techniques.

5. 发明授权

US06521549B1 METHOD OF REDUCING SILICON OXYNITRIDE GATE INSULATOR THICKNESS IN SOME TRANSISTORS OF A HYBRID INTEGRATED CIRCUIT TO OBTAIN INCREASED DIFFERENTIAL IN GATE INSULATOR THICKNESS WITH OTHER TRANSISTORS OF THE HYBRID CIRCUIT 有权
标题翻译：在混合集成电路的某些晶体管中减少硅氧烷栅绝缘体厚度的方法，以获得具有混合电路的其他晶体管的栅绝缘体厚度增加的差异
公开(公告)号：US06521549B1
公开(公告)日：2003-02-18
申请号：US09724225
申请日：2000-11-28
申请人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
发明人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
IPC分类号： H01L21469
CPC分类号： H01L21/823462
摘要： A relatively thin gate insulator of a digital switching transistor is formed from a layer of silicon oxynitride which was initially formed by implanting nitrogen atoms in a silicon substrate and oxidizing the nitrogen and silicon. It has been discovered that an outer layer of silicon dioxide is formed as a part of the silicon oxynitride layer. Removing this outer layer of silicon dioxide from the silicon oxynitride layer leaves a thin remaining layer of substantially-only silicon oxynitride as the gate insulator. Thinner gate insulators of approximately 15-21 angstroms, for example, can be formed from a grown thickness of 60 angstroms, for example. Gate insulators for digital and analog transistors may be formed simultaneously with a greater differential in thickness been possible by using conventional nitrogen implantation techniques.
摘要翻译：数字开关晶体管的相对薄的栅极绝缘体由氮氧化硅层形成，其最初通过在硅衬底中注入氮原子并氧化氮和硅而形成。已经发现，作为氧氮化硅层的一部分形成二氧化硅的外层。从氮氧化硅层中除去二氧化硅外层留下基本上只有氮氧化硅的薄剩余层作为栅极绝缘体。例如，大约15-21埃的较薄的栅极绝缘体可以由例如60埃的生长厚度形成。用于数字和模拟晶体管的栅极绝缘体可以同时形成，通过使用常规氮注入技术，可以获得更大的厚度差。

6. 发明授权

US07664045B2 Sampling to a next hop 有权
标题翻译：抽样到下一跳
公开(公告)号：US07664045B2
公开(公告)日：2010-02-16
申请号：US11811921
申请日：2007-06-11
申请人： Kaushik Ghosh , Dennis Ferguson , Rajiv Patel , Scott Mackie
发明人： Kaushik Ghosh , Dennis Ferguson , Rajiv Patel , Scott Mackie
IPC分类号： G06F11/00 , H04L12/26
CPC分类号： H04L45/00 , H04L43/026 , H04L45/28 , H04L45/60 , Y02D50/30
摘要： Samples from an addressed data forwarding devices, such as a router, are forwarded to a specified next hop address and/or out a specified next hop interface. However, the sampling and/or next hop forwarding is suppressed if the specified next hop address is unstable or unresolved.
摘要翻译：来自寻址数据转发设备（例如路由器）的样本被转发到指定的下一跳地址和/或指定的下一跳接口。但是，如果指定的下一跳地址不稳定或未解决，则采样和/或下一跳转发被抑制。

7. 发明授权

US07509648B1 Paradigm in multimedia services creation methodology, and new service creation and service execution environments 有权
标题翻译：多媒体服务创建方法的范式，以及新的服务创建和服务执行环境
公开(公告)号：US07509648B1
公开(公告)日：2009-03-24
申请号：US09514149
申请日：2000-02-28
申请人： Siroos K Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N Lokhande , Patricia E Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F Wunderlich
发明人： Siroos K Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N Lokhande , Patricia E Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F Wunderlich
IPC分类号： G06F3/00 , G06F15/177
CPC分类号： G06F8/34 , G06F3/04817 , G06F8/311 , G06F9/54 , G06F9/542 , G06F17/30017 , G06F2209/544
摘要： The present invention discloses a new paradigm in Multimedia Services Creation Methodology, and new Service Creation and Service Execution Environments, based on this methodology. A service designer can access the Service Creation Environment via a Web based Graphical User Interface (GUI), to design new service in an automated way. The design process includes creation of the Service Logic Script (SLS), and associated databases that are used for storage of service and subscriber related data. The service developer (user) assembles Language Graphical Objects (LGO) into Service Logic Script. LGOs are part of a new graphical language that has been developed to meet multimedia service creation needs. They represent service control and call control primitive functions that have to be performed, in order to provide a multimedia service to service subscribers.
摘要翻译：本发明基于该方法公开了多媒体服务创建方法的新范例以及新的服务创建和服务执行环境。服务设计人员可以通过基于Web的图形用户界面（GUI）访问服务创建环境，以自动方式设计新服务。设计过程包括创建服务逻辑脚本（SLS）以及用于存储服务和用户相关数据的相关数据库。服务开发人员（用户）将语言图形对象（LGO）组装到服务逻辑脚本中。 LGO是为满足多媒体服务创造需求而开发的新型图形语言的一部分。它们表示必须执行的服务控制和呼叫控制原语功能，以便向服务订户提供多媒体服务。

8. 发明授权

US06335295B1 Flame-free wet oxidation 有权
标题翻译：无火焰湿氧化
公开(公告)号：US06335295B1
公开(公告)日：2002-01-01
申请号：US09231265
申请日：1999-01-15
申请人： Rajiv Patel
发明人： Rajiv Patel
IPC分类号： H01L2102
CPC分类号： H01L21/02238 , C01B5/00 , C23C8/16 , H01L21/02255 , H01L21/31662
摘要： Water for use in wet oxidation of semiconductor surfaces may be generated by reacting ultra pure hydrogen and ultra pure gaseous oxygen without a flame. Because no flame is used, contamination due to a flame impinging on components of a “torch” is not a problem. Flame-free generation of water is accomplished by reacting hydrogen and oxygen under conditions that do not result in ignition. This may be accomplished by provided a diluted hydrogen stream in which molecular hydrogen is mixed with a diluent such as a noble gas or nitrogen. This use of diluted hydrogen also reduces or eliminates the danger of explosion. This can simplify the apparatus design by eliminating the need for complicated interlocks, flame detectors, etc.
摘要翻译：用于半导体表面湿氧化的水可以通过使超纯氢和超纯气态氧反应而不产生火焰而产生。因为没有使用火焰，所以由于火焰撞击在“火炬”的部件上的污染不成问题。无火焰产生的水是通过在不导致点火的条件下使氢和氧反应来实现的。这可以通过提供其中分子氢与稀释剂如惰性气体或氮气混合的稀释氢气流来实现。稀释氢的使用也可以减少或消除爆炸的危险。这可以通过消除对复杂互锁，火焰探测器等的需要来简化设备设计。

9. 发明申请

US20110265062A1 Paradigm in Multimedia Services Creation Methodology, and New Service Creation and Service Execution Environments 失效
标题翻译：多媒体服务创建方法的范式，以及新的服务创建和服务执行环境
公开(公告)号：US20110265062A1
公开(公告)日：2011-10-27
申请号：US13082488
申请日：2011-04-08
申请人： Siroos K. Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N. Lokhande , Patricia E. Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F. Wunderlich
发明人： Siroos K. Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N. Lokhande , Patricia E. Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F. Wunderlich
IPC分类号： G06F3/00
CPC分类号： G06F8/34 , G06F3/04817 , G06F8/311 , G06F9/54 , G06F9/542 , G06F17/30017 , G06F2209/544
摘要： The present invention discloses a new paradigm in Multimedia Services Creation Methodology, and new Service Creation and Service Execution Environments, based on this methodology. A service designer can access the Service Creation Environment via a Web based Graphical User Interface (GUI), to design new service in an automated way. The design process includes creation of the Service Logic Script (SLS), and associated databases that are used for storage of service and subscriber related data. The service developer (user) assembles Language Graphical Objects (LGO) into Service Logic Script. LGOs are part of a new graphical language that has been developed to meet multimedia service creation needs. They represent service control and call control primitive functions that have to be performed, in order to provide a multimedia service to service subscribers.
摘要翻译：本发明基于该方法公开了多媒体服务创建方法的新范例以及新的服务创建和服务执行环境。服务设计人员可以通过基于Web的图形用户界面（GUI）访问服务创建环境，以自动方式设计新服务。设计过程包括创建服务逻辑脚本（SLS）以及用于存储服务和用户相关数据的相关数据库。服务开发人员（用户）将语言图形对象（LGO）组装到服务逻辑脚本中。 LGO是为满足多媒体服务创造需求而开发的新型图形语言的一部分。它们表示必须执行的服务控制和呼叫控制原语功能，以便向服务订户提供多媒体服务。

10. 发明授权

US07926063B2 Paradigm in multimedia services creation methodology, and new service creation and service execution environments 有权
标题翻译：多媒体服务创建方法的范式，以及新的服务创建和服务执行环境
公开(公告)号：US07926063B2
公开(公告)日：2011-04-12
申请号：US12214191
申请日：2008-06-17
申请人： Siroos K Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N Lokhande , Patricia E Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F Wunderlich
发明人： Siroos K Afshar , Nancy Conley , Keith Kiser , William J. Leighton, III , Dinesh N Lokhande , Patricia E Mccrink , Shapour Neshatfar , Boguslaw J. Olszowy , Rajiv Patel , Sudhakar Rajamannar , Mark Szachara , Eberhard F Wunderlich
IPC分类号： G06F3/00
CPC分类号： G06F8/34 , G06F3/04817 , G06F8/311 , G06F9/54 , G06F9/542 , G06F17/30017 , G06F2209/544
摘要： The present invention discloses a new paradigm in Multimedia Services Creation Methodology, and new Service Creation and Service Execution Environments, based on this methodology. A service designer can access the Service Creation Environment via a Web based Graphical User Interface (GUI), to design new service in an automated way. The design process includes creation of the Service Logic Script (SLS), and associated databases that are used for storage of service and subscriber related data. The service developer (user) assembles Language Graphical Objects (LGO) into Service Logic Script. LGOs are part of a new graphical language that has been developed to meet multimedia service creation needs. They represent service control and call control primitive functions that have to be performed, in order to provide a multimedia service to service subscribers.
摘要翻译：本发明基于该方法公开了多媒体服务创建方法的新范例以及新的服务创建和服务执行环境。服务设计人员可以通过基于Web的图形用户界面（GUI）访问服务创建环境，以自动方式设计新服务。设计过程包括创建服务逻辑脚本（SLS）以及用于存储服务和用户相关数据的相关数据库。服务开发人员（用户）将语言图形对象（LGO）组装到服务逻辑脚本中。 LGO是为满足多媒体服务创造需求而开发的新型图形语言的一部分。它们表示必须执行的服务控制和呼叫控制原语功能，以便向服务订户提供多媒体服务。

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