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1. 发明授权

US06902605B2 Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
标题翻译：用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法
公开(公告)号：US06902605B2
公开(公告)日：2005-06-07
申请号：US10379692
申请日：2003-03-06
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
IPC分类号： C23C18/36 , C23C18/50 , C23C18/34 , B05D1/18
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

2. 发明授权

US06911067B2 Solution composition and method for electroless deposition of coatings free of alkali metals 有权
标题翻译：用于无碱沉积不含碱金属的涂层的溶液组成和方法
公开(公告)号：US06911067B2
公开(公告)日：2005-06-28
申请号：US10339260
申请日：2003-01-10
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： C23C18/50 , C23C18/52
CPC分类号： C23C18/50
摘要： An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.
摘要翻译：本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源，用于调节溶液pH的氢氧化物形式的pH调节剂，还原剂，其将第一金属离子还原成基底上的第一金属，用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源，提高上述涂层的耐腐蚀性。本发明的方法包括以下步骤：通过络合反应制备金属如Ni和Co的氢氧化物，其中通过置换羟基离子得到Ni和Co的氢氧化物溶液， SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物，例如H 3 [P（W 3 N）O _{10），以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co，Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。并从所得混合溶液中进行沉积。}

3. 发明授权

US06794288B1 Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation 有权
标题翻译：使用无钯活化将含磷金属膜无电沉积到铜上的方法
公开(公告)号：US06794288B1
公开(公告)日：2004-09-21
申请号：US10345134
申请日：2003-05-05
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/7685 , H01L21/76855 , H01L21/76874
摘要： The method for selective deposition of Co—W—P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co—W—P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.
摘要翻译： Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。次磷酸是优选的，因为它与无电解沉积溶液更相容。

4. 发明授权

US06875691B2 Temperature control sequence of electroless plating baths 失效
标题翻译：化学镀浴的温度控制顺序
公开(公告)号：US06875691B2
公开(公告)日：2005-04-05
申请号：US10178053
申请日：2002-06-21
申请人： Nanhai Li , Nicolai Petrov , Artur Kolics
发明人： Nanhai Li , Nicolai Petrov , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , H01L21/44
CPC分类号： C23C18/1632 , C23C18/1676 , H01L21/288
摘要： A sequence of temperature control in electroless plating for microelectronic processing is disclosed in this invention. This sequence improves the uniformity of the deposit, increases the lifetime of the plating bath and is cost effective. The plating bath is heated to a temperature, which is lower than the minimum deposition temperature, in an apparatus outside the plating chamber. Then the solution is introduced into the plating chamber without the occurrence of the deposition. After the chamber is filled, the solution is heated up to the desired deposition temperature. The deposition is initialized. After the deposition, the solution is returned back to the original tank.
摘要翻译：在本发明中公开了用于微电子处理的化学镀中的温度控制序列。该顺序提高了沉积物的均匀性，增加了镀浴的寿命，并且是成本有效的。在电镀室外的设备中将电镀浴加热到低于最小沉积温度的温度。然后将溶液引入电镀室中，而不会发生沉积。在室充满之后，将溶液加热到所需的沉积温度。沉积被初始化。沉积后，溶液返回原来的槽。

5. 发明授权

US06913651B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
公开(公告)号：US06913651B2
公开(公告)日：2005-07-05
申请号：US10103015
申请日：2002-03-22
申请人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , B05C5/00 , B05C11/00
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

6. 发明授权

US07226856B1 Nano-electrode-array for integrated circuit interconnects 有权
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US07226856B1
公开(公告)日：2007-06-05
申请号：US10990273
申请日：2004-11-15
申请人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
发明人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路和集成电路的制造方法，包括提供具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列形成在沟槽和通孔中的电介质层之上，导体沉积在纳米电极阵列上。导体和纳米电极阵列与电介质层的表面共面。

7. 发明申请

US20050221015A1 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US20050221015A1
公开(公告)日：2005-10-06
申请号：US11138531
申请日：2005-05-26
申请人： Igor Ivanov , Jonathan Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , C25D3/56
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：本发明的装置具有一个能够被密封并能承受增加的压力和高温的封闭室。所述腔室包含能够围绕垂直轴线旋转的衬底保持器，以及衬底保持器内部的边缘抓握机构。沉积室具有用于供应各种处理液体的多个入口端口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。该设备还设置有用于处理液体和气体的储存器和罐，以及用于控制室中的温度和压力的溶液加热器和控制系统。加热器可以位于工作室外部或内置于基板支架中，也可以同时使用两个加热器。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

8. 发明申请

US20070284746A1 NANO-ELECTRODE-ARRAY FOR INTEGRATED CIRCUIT INTERCONNECTS 审中-公开
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US20070284746A1
公开(公告)日：2007-12-13
申请号：US11742328
申请日：2007-04-30
申请人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
发明人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
IPC分类号： H01L21/82
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。导体和纳米电极阵列与电介质层的表面共面。

9. 发明授权

US07780772B2 Electroless deposition chemical system limiting strongly adsorbed species 有权
标题翻译：化学沉积化学系统限制强吸附物种
公开(公告)号：US07780772B2
公开(公告)日：2010-08-24
申请号：US11563199
申请日：2006-11-25
申请人： Artur Kolics , Igor Ivanov
发明人： Artur Kolics , Igor Ivanov
IPC分类号： C23C18/31 , C23C18/34 , C23C18/40 , C23C18/44
CPC分类号： C23C18/42 , C23C18/31 , C23C18/32 , C23C18/38
摘要： An electroless deposition chemical system includes an electroless solution including a metal component, and a strongly adsorbed species component having a concentration less than a concentration of the metal component.
摘要翻译：无电沉积化学系统包括含有金属组分的无电溶液和浓度小于金属组分浓度的强吸附物质组分。

10. 发明申请

US20090288594A1 ELECTROLESS DEPOSITION CHEMICAL SYSTEM LIMITING STRONGLY ADSORBED SPECIES 有权
标题翻译：电沉积化学系统限制强烈吸附的物种
公开(公告)号：US20090288594A1
公开(公告)日：2009-11-26
申请号：US11563199
申请日：2006-11-25
申请人： Artur Kolics , Igor Ivanov
发明人： Artur Kolics , Igor Ivanov
IPC分类号： B05C3/02 , C09D5/00
CPC分类号： C23C18/42 , C23C18/31 , C23C18/32 , C23C18/38
摘要： An electroless deposition chemical system includes an electroless solution including a metal component, and a strongly adsorbed species component having a concentration less than a concentration of the metal component.
摘要翻译：无电沉积化学系统包括含有金属组分的无电溶液和浓度小于金属组分浓度的强吸附物质组分。

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