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1. 发明申请

US20080067626A1 METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE 审中-公开
标题翻译：用于制造TRENCH结构的方法和包括TRENCH结构的半导体布置
公开(公告)号：US20080067626A1
公开(公告)日：2008-03-20
申请号：US11834154
申请日：2007-08-06
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
IPC分类号： H01L29/94 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/3247 , H01L29/0653 , H01L29/407 , H01L29/66621 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.
摘要翻译：一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。在表面上方和第一沟槽部分之上产生半导体层。在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

2. 发明申请

US20100078775A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：具有充电载体补偿结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US20100078775A1
公开(公告)日：2010-04-01
申请号：US12241985
申请日：2008-09-30
申请人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
发明人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L29/36 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0688 , H01L29/0878 , H01L29/105 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
摘要翻译：半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置垂直延伸的互补掺杂区定位。

3. 发明授权

US08716792B2 Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device 有权
标题翻译：具有载流子补偿结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US08716792B2
公开(公告)日：2014-05-06
申请号：US12241985
申请日：2008-09-30
申请人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
发明人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
IPC分类号： H01L21/20
CPC分类号： H01L29/36 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0688 , H01L29/0878 , H01L29/105 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
摘要翻译：半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置垂直延伸的互补掺杂区定位。

4. 发明申请

US20090189240A1 SEMICONDUCTOR DEVICE WITH AT LEAST ONE FIELD PLATE 审中-公开
标题翻译：具有至少一个现场板的半导体器件
公开(公告)号：US20090189240A1
公开(公告)日：2009-07-30
申请号：US12019759
申请日：2008-01-25
申请人： Armin Willmeroth , Anton Mauder , Michael Rueb , Franz Hirler
发明人： Armin Willmeroth , Anton Mauder , Michael Rueb , Franz Hirler
IPC分类号： H01L23/58 , H01L21/76
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/404 , H01L29/41766 , H01L29/47 , H01L29/7396 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with at least one field plate. One embodiment provides the field plate to make contact with the semiconductor body at a connection contact. The semiconductor body has in the region of the connection contact a doping concentration that is less than 5·1017 cm−3.
摘要翻译：具有至少一个场板的半导体部件。一个实施例提供了场板，以在连接接触处与半导体本体接触。半导体本体在连接区域中具有小于5.1017cm-3的掺杂浓度。

5. 发明申请

US20090085064A1 HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：异相半导体器件和方法
公开(公告)号：US20090085064A1
公开(公告)日：2009-04-02
申请号：US11862661
申请日：2007-09-27
申请人： Michael Rueb , Michael Treu , Armin Willmeroth , Franz Hirler
发明人： Michael Rueb , Michael Treu , Armin Willmeroth , Franz Hirler
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/165 , H01L29/267 , H01L29/41775 , H01L29/66068
摘要： A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.
摘要翻译：半导体器件包括第一带隙材料的第一半导体衬底和第二带隙材料的第二半导体衬底。第二带隙材料具有比第一带隙材料低的带隙。基本上在第一平面中在第一半导体衬底和第二半导体衬底之间形成异质结。所述半导体器件还包括垂直于所述第一平面的横截面，所述第一导电类型的第一半导体区域和所述第一导电类型的第二半导体区域从所述第二半导体衬底至少部分地延伸进入第一半导体衬底。第一和第二半导体区域在第一半导体衬底中沿平行于第一平面的方向彼此间隔开第一距离，第一距离布置在接近异质结的区域中，并且大于第二距离远离异质结的区域。

6. 发明授权

US08101997B2 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
标题翻译：具有半导体主体中的载流子补偿结构的半导体器件及其制造方法
公开(公告)号：US08101997B2
公开(公告)日：2012-01-24
申请号：US12111749
申请日：2008-04-29
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

7. 发明申请

US20110241104A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION 有权
标题翻译：集成电路设备及其生产方法
公开(公告)号：US20110241104A1
公开(公告)日：2011-10-06
申请号：US13161130
申请日：2011-06-15
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0839 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7396
摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.
摘要翻译：集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。与沟道区相邻的漂移区包括漂移区和电荷补偿区。电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

8. 发明申请

US20090267174A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE IN A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION 有权
标题翻译：具有半导体体中的充电载体补偿结构的半导体器件及其制造方法
公开(公告)号：US20090267174A1
公开(公告)日：2009-10-29
申请号：US12111749
申请日：2008-04-29
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L29/06 , H01L21/20 , H01L21/304
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

9. 发明申请

US20120088353A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE IN A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION 有权
标题翻译：具有半导体体中的充电载体补偿结构的半导体器件及其制造方法
公开(公告)号：US20120088353A1
公开(公告)日：2012-04-12
申请号：US13327941
申请日：2011-12-16
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L21/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

10. 发明申请

US20090159927A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION 审中-公开
标题翻译：集成电路设备及其生产方法
公开(公告)号：US20090159927A1
公开(公告)日：2009-06-25
申请号：US11963057
申请日：2007-12-21
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
IPC分类号： H01L29/739 , H01L29/78 , H01L21/331 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0839 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7396
摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.
摘要翻译：集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。与沟道区相邻的漂移区包括漂移区和电荷补偿区。电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

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