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    • 3. 发明授权
    • Method of joining molded silicon carbide parts
    • 连接成型碳化硅部件的方法
    • US4762269A
    • 1988-08-09
    • US866597
    • 1986-05-23
    • Erno GyarmatiAristides Naoumidis
    • Erno GyarmatiAristides Naoumidis
    • C04B37/00B23K35/368
    • C04B35/645C04B37/006C04B2235/6562C04B2235/6582C04B2237/122C04B2237/123C04B2237/124C04B2237/125C04B2237/365C04B2237/568C04B2237/708C04B2237/765Y10S228/903
    • Silicon carbon molded parts, whether made of silicon carbide sintered together in the absence of pressure or hot pressed silicon carbide are bonded together at close fitting surfaces by applying a layer not thicker than 1 .mu.m on polished surfaces to be joined, containing at least one carbide and/or silicide forming element from the group Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr. The surfaces to be joined are than fitted together and heated in an inert or reducing atomosphere at a pressure between 10.sup.-1 and 10.sup.-5 Pa at temperatures in the range 800.degree. to 2200.degree. C. while under a pressure applied which is between 1 and 100 MPa. In particular, the heat treatment range from 1550.degree. C. to 1750.degree. C. under a pressure of 15 to 45 MPa applied pressure in argon at a pressure of from 10.sup.3 to 10.sup.5 Pa argon, for 30 to 60 minutes. Preferably a thin layer is vapor-deposited or sputtered. Cr, Cu, Ni, Pt and/or Pd, and especially Cu and its alloys, have been found particularly effective.
    • 在不存在压力的情况下烧结在一起的碳化硅或热压碳化硅的碳碳成型部件在紧密配合的表面上通过在要接合的抛光表面上施加不大于1μm的层而粘合在一起,其中至少包含一个 碳化物和/或硅化物形成元素,来自Ag,Al,Au,B,Be,Co,Cr,Cu,Fe,Mg,Mn,Mo,Nb,Ni,Pd,Pt,Ta,Ti,V,W和 Zr。 待连接的表面不能装配在一起,并且在惰性或还原性空气中在10-1和10-5 Pa之间的压力下在800°至2200℃的温度下加热,同时在施加的压力为1 和100MPa。 特别地,热处理范围为1550℃至1750℃,压力为15〜45MPa,氩气压力为氩气103〜105Pa氩气30〜60分钟。 优选地,气相沉积或溅射薄层。 已经发现Cr,Cu,Ni,Pt和/或Pd,特别是Cu及其合金特别有效。
    • 4. 发明授权
    • Method of making porous silicon carbide bodies
    • 制造多孔碳化硅体的方法
    • US4564496A
    • 1986-01-14
    • US742654
    • 1985-06-10
    • Ashok K. GuptaErno GyarmatiHermann KreutzRudolf MunzerAristides NaoumidisHubertus Nickel
    • Ashok K. GuptaErno GyarmatiHermann KreutzRudolf MunzerAristides NaoumidisHubertus Nickel
    • C04B38/00C04B35/573C04B41/50C01B31/36
    • C04B41/009C04B35/573C04B38/00C04B41/5059
    • Porous silicon carbide bodies are obtained by starting with a powder of particle size falling within a single sieve mesh range fraction and consisting either entirely of carbon particles or a mixture of carbon and silicon carbide particles of the same mesh fraction is mixed or coated with 15 to 30% by weight of a binder, moulded to shape, warmed in the temperature range from 40.degree. to 200.degree. C. to vaporize volatile material and then coked at a temperature rising to 850.degree. C. Then it is siliconized by raising the temperature to the range from 1650.degree. to 1950.degree. C. with gaseous silicon or impregnated with silicon by dipping the body into a silicon melt and convert it to carbide, with the excess silicon thereafter being removed by vaporizing out or by boiling in lye. Sieve mesh fractions in the region of a few hundred .mu.m are preferred, and the density of the porous body after pressing but before siliconizing should lie in the neighborhood of 0.6 to 0.7 g/cm.sup.3.
    • 多孔碳化硅体是通过以粒度落入单一筛网范围级分的粉末开始获得的,并且完全由碳颗粒组成,或者将相同网眼级分的碳和碳化硅颗粒的混合物混合或涂覆至15至 30重量%的粘合剂,模塑成型,在40℃至200℃的温度范围内加热,蒸发挥发性物质,然后在升至850℃的温度下焦化。然后将其升温至 通过将体积浸入硅熔体中并将其转化为碳化物,然后通过蒸发或通​​过在碱液中沸腾而除去过量的硅,从1650℃至1950℃的范围内,用气态硅或硅浸渍。 优选在几百微米范围内的筛网部分,压制后但在硅化之前的多孔体的密度应在0.6至0.7克/厘米3附近。
    • 5. 发明授权
    • Method and components for bonding a silicon carbide molded part to
another such part or to a metallic part
    • 用于将碳化硅模制部件接合到另一个这种部件或金属部件的方法和部件
    • US4961529A
    • 1990-10-09
    • US287342
    • 1988-12-20
    • Bernd GottseligErno GyarmatiAristides Naoumidis
    • Bernd GottseligErno GyarmatiAristides Naoumidis
    • B23K20/00C04B37/00C04B37/02
    • C04B35/645C04B37/003C04B37/005C04B37/025C04B2235/6562C04B2235/6582C04B2235/963C04B2237/083C04B2237/365C04B2237/405C04B2237/406C04B2237/52C04B2237/567C04B2237/568C04B2237/60C04B2237/708Y10T428/264Y10T428/266
    • A layer of titanium carbosilicide Ti.sub.3 SiC.sub.2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon carbide also makes possible brazed juoints with steel alloy or nickel based alloy parts. The layer may be applied directly by a powder dispersion in a volatile but viscous glycol or by sputtering or else the layer can be made in place from a powder mixture of components, especially TiC.sub.0,8 and Tisi.sub.2 (5:1) or a titanium layer of a thickness in the range of 1 to 3 .mu.m that reacts with the silicon carbide surface. When silicon carbide parts are joined together, the heating up to make the joint also serves to convert a titanium layer into titanium carbosilicide. When silicon carbide is to be joined with metal, a preliminary heating step is necessary to at first convert a powder mixture or a titanium layer on the silicon carbide surface to Ti.sub.3 SiC.sub.2. Alternatively a Ti.sub.3 SiC.sub. 2 surface layer can be formed by a sputtering process. The Ti.sub.3 SiC.sub.2 layer favors brazing of the metal part to the silicon carbide surface as treated. The heating requires reaching a temperature in the region from 1200.degree. to 1600.degree. C. for periods between a half hour to about three hours in the presence of a reducing protective gas.
    • 在用于制造接头的碳化硅表面上的碳化硅硅钛酸Ti3SiC2层可以在热压步骤中将碳化硅体连接在一起,并获得与碳化硅材料的强度相当的接合强度。 这种碳化硅层也可以用钢合金或镍基合金部件进行铜焊接。 该层可以通过粉末分散体直接施加在挥发性但粘稠的二醇中或通过溅射,或者可以从组分的粉末混合物,特别是TiC0,8和Tisi2(5:1)的粉末混合物或钛层 厚度在1至3μm的范围内,与碳化硅表面反应。 当碳化硅部分接合在一起时,加热至接合还用于将钛层转化为碳硅化钛。 当碳化硅与金属接合时,需要预加热步骤,以便首先将碳化硅表面上的粉末混合物或钛层转化为Ti 3 SiC 2。 或者,可以通过溅射工艺形成Ti 3 SiC 2表面层。 Ti3SiC2层有利于金属部分对被处理的碳化硅表面的钎焊。 加热需要在还原保护气体的存在下,在1200℃至1600℃的温度范围内达到半小时至约3小时。