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1. 发明授权

US4564496A Method of making porous silicon carbide bodies 失效
标题翻译：制造多孔碳化硅体的方法
公开(公告)号：US4564496A
公开(公告)日：1986-01-14
申请号：US742654
申请日：1985-06-10
申请人： Ashok K. Gupta , Erno Gyarmati , Hermann Kreutz , Rudolf Munzer , Aristides Naoumidis , Hubertus Nickel
发明人： Ashok K. Gupta , Erno Gyarmati , Hermann Kreutz , Rudolf Munzer , Aristides Naoumidis , Hubertus Nickel
IPC分类号： C04B38/00 , C04B35/573 , C04B41/50 , C01B31/36
CPC分类号： C04B41/009 , C04B35/573 , C04B38/00 , C04B41/5059
摘要： Porous silicon carbide bodies are obtained by starting with a powder of particle size falling within a single sieve mesh range fraction and consisting either entirely of carbon particles or a mixture of carbon and silicon carbide particles of the same mesh fraction is mixed or coated with 15 to 30% by weight of a binder, moulded to shape, warmed in the temperature range from 40.degree. to 200.degree. C. to vaporize volatile material and then coked at a temperature rising to 850.degree. C. Then it is siliconized by raising the temperature to the range from 1650.degree. to 1950.degree. C. with gaseous silicon or impregnated with silicon by dipping the body into a silicon melt and convert it to carbide, with the excess silicon thereafter being removed by vaporizing out or by boiling in lye. Sieve mesh fractions in the region of a few hundred .mu.m are preferred, and the density of the porous body after pressing but before siliconizing should lie in the neighborhood of 0.6 to 0.7 g/cm.sup.3.
摘要翻译：多孔碳化硅体是通过以粒度落入单一筛网范围级分的粉末开始获得的，并且完全由碳颗粒组成，或者将相同网眼级分的碳和碳化硅颗粒的混合物混合或涂覆至15至 30重量％的粘合剂，模塑成型，在40℃至200℃的温度范围内加热，蒸发挥发性物质，然后在升至850℃的温度下焦化。然后将其升温至通过将体积浸入硅熔体中并将其转化为碳化物，然后通过蒸发或通过在碱液中沸腾而除去过量的硅，从1650℃至1950℃的范围内，用气态硅或硅浸渍。优选在几百微米范围内的筛网部分，压制后但在硅化之前的多孔体的密度应在0.6至0.7克/厘米3附近。

2. 发明授权

US4432957A Method of producing silicon carbide bodies 失效
标题翻译：生产碳化硅体的方法
公开(公告)号：US4432957A
公开(公告)日：1984-02-21
申请号：US352007
申请日：1982-02-24
申请人： Ashok K. Gupta , Erno Gyarmati , Hermann Kreutz , Rudolf Munzer , Aristides Naoumidis , Hubertus Nickel
发明人： Ashok K. Gupta , Erno Gyarmati , Hermann Kreutz , Rudolf Munzer , Aristides Naoumidis , Hubertus Nickel
IPC分类号： C04B35/573 , C01B31/36 , C04B35/56
CPC分类号： C04B35/573
摘要： A significant improvement of the silicon impregnation depth of a carbon precursor body in the siliconizing thereof to make a silicon carbide body is obtained, as well as an accelerated conversion into silicon carbide if activated carbon is used in whole or in part as the carbon powder component of the precursor body. The molding material is preferably 20 to 60% by weight of binder and 20 to 70% activated carbon. This molding material may also usefully contain 10 to 60% by weight of .alpha.-silicon carbide, which may be previously made by siliconizing carbon powder.
摘要翻译：如果活性炭全部或部分用作碳粉组分，则可获得碳前体在其硅化物中的硅浸渍深度的显着改善以制备碳化硅体，以及加速转化为碳化硅的前体体。成型材料优选为20〜60重量％的粘合剂和20〜70％的活性炭。该成型材料还可以有用地含有10至60重量％的α-碳化硅，其可以预先通过硅化碳粉制备。

3. 发明授权

US4487644A Binderless weld-bonding of preshaped sic-base parts into solid bodies 失效
标题翻译：预成型的锡基部分粘结到固体中
公开(公告)号：US4487644A
公开(公告)日：1984-12-11
申请号：US423458
申请日：1982-09-24
申请人： Ashok K. Gupta , Ernoe Gyarmati , Hermann Kreutz , Rudolf Muenzer , Aristides Naoumidis
发明人： Ashok K. Gupta , Ernoe Gyarmati , Hermann Kreutz , Rudolf Muenzer , Aristides Naoumidis
IPC分类号： C04B35/573 , C04B37/00 , C03B29/00
CPC分类号： C04B35/573 , C04B37/001 , C04B2235/6567 , C04B2235/658 , C04B2235/6581 , C04B2237/32 , C04B2237/365 , C04B2237/525 , C04B2237/568
摘要： Component bodies of silicon carbide base material, at least in their surface layers, are welded together without the provision of a binder at finely polished joining surfaces by virtue of the fact that at least one of the joint surfaces is of a silicon carbide material containing an excess of silicon (SiSiC). The component bodies are kept closely fitted together especially by an additional pressing force of at least 0.1 kg/cm.sup.2 during a heating stage at atmospheric or lower pressure at a temperature in the range from 1500.degree. C. to 1800.degree. C. for 15 to 100 minutes in an inert atmosphere, the excess of silicon at the boundary making it possible for silicon carbide crystal growth to take place across the boundary.
摘要翻译：至少在它们的表面层中的碳化硅基材的组分主体被焊接在一起，而不需要在精细抛光的接合表面上提供粘合剂，因为至少一个接合表面是含有碳化硅材料的碳化硅材料过量的硅（SiSiC）。在大气压或更低压力的加热阶段，在1500℃至1800℃的温度下，组分体保持紧密地装配在一起，特别是通过至少0.1kg / cm 2的额外的压力，15至100 在惰性气氛中几分钟，边界处的硅过量，使得碳化硅晶体生长跨越边界成为可能。

4. 发明专利

DE421595C 未知
公开(公告)号：DE421595C
公开(公告)日：1925-11-14
申请号：DEK0092233
申请日：1924-12-23
申请人： HERMANN KREUTZ , HEINRICH HOELK
IPC分类号： A01B35/28

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