专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008263186A Halogen-free amorphous carbon mask etching having high selectivity to photoresist 审中-公开
标题翻译：无光泽的无定形碳膜蚀刻具有高选择性的光刻胶
公开(公告)号：JP2008263186A
公开(公告)日：2008-10-30
申请号：JP2008072128
申请日：2008-03-19
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KIM JONG MUN , WANG JUDY , JOSHI AJEY M , LIU JINGBAO , PU BRYAN Y
IPC分类号： H01L21/3065 , G03F7/40
CPC分类号： H01L21/31122 , H01L21/0273 , H01L21/0332 , H01L21/31138 , H01L21/31144
摘要： PROBLEM TO BE SOLVED: To define a feature in a multi-layer masking stack including an amorphous carbon layer using a halogen-free plasma etching process in one embodiment of the present invention.
SOLUTION: In a particular embodiment, oxygen (O
2 ), nitrogen (N
2 ), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features on a substrate film having a reduced line edge roughness value. In another embodiment, the present invention performs O
2 plasma pretreatment prior to halogen-free amorphous carbon etching to form an oxidized silicon region on a patterned photoresist layer to increase the selectivity of amorphous carbon etching relative to a patterned photoresist layer containing unoxidized silicon.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在本发明的一个实施方案中，使用无卤等离子体蚀刻工艺在包括无定形碳层的多层掩蔽堆叠中定义特征。解决方案：在一个具体实施方案中，使用氧（O 2 SB 2），氮（N 2 SB 2）和一氧化碳（CO）来蚀刻无定形碳层以形成能够在具有降低的线边缘粗糙度值的基底膜上产生亚100nm特征的掩模。在另一个实施方案中，本发明在无卤无定形碳蚀刻之前执行O SB SB2等离子体预处理，以在图案化的光致抗蚀剂层上形成氧化的硅区域，以增加非晶碳蚀刻相对于图案化的选择性含有未氧化硅的光致抗蚀剂层。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2007300102A Plasma etching treatment that uses polymer etching gases of different etching and polymerization deposition rates in different radial gas injection zones by applying time modulation 审中-公开
标题翻译：使用时间调制在不同的径向气体注入区使用不同的蚀刻和聚合沉积速率的聚合物蚀刻气体的等离子体蚀刻处理
公开(公告)号：JP2007300102A
公开(公告)日：2007-11-15
申请号：JP2007112912
申请日：2007-04-23
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： BERA KALLOL , ZHAO XIAOYE , DOAN KENNY L , GOLD EZRA ROBERT , BRILLHART PAUL L , GEOFFRION BRUNO , PU BRYAN Y , HOFFMAN DANIEL
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： PROBLEM TO BE SOLVED: To provide an etching method and apparatus with a uniform etching rate or etching profile that prevents gas dwell time from becoming relatively shorter at the central portion than at the peripheral portion.
SOLUTION: This plasma etching treatment is performed in a plasma reaction apparatus with a ceiling electrode 110 that lies on a process region equipped with multiple injection zones shaped as concentric circles. This plasma etching treatment includes distribution of chemical species among multiple gas injection zones by injecting treatment gases of different chemical species composition through different gas injection zones. The treatment gases comprise fluorine rich polymer-forming etching gas that promotes a high etching rate, carbon rich polymer-forming etching gas that promotes a high polymerization deposition rate, polymer control gas (such as oxygen or nitrogen) that delays polymerization deposition rate, and inactive dilution gas that alleviates tapering-off of etching profile.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有均匀蚀刻速率或蚀刻轮廓的蚀刻方法和装置，其防止气体停留时间在中心部分比在周边部分变得相对较短。解决方案：该等离子体蚀刻处理在具有顶板电极110的等离子体反应装置中进行，顶板电极110位于配备有形成为同心圆的多个注入区的处理区域上。这种等离子体蚀刻处理包括通过不同的气体注入区注入不同化学物质组成的处理气体来在多个气体注入区域之间分配化学物质。处理气体包括促进高蚀刻速率的富氟聚合物形成蚀刻气体，促进高聚合沉积速率的富碳聚合物形成蚀刻气体，延迟聚合沉积速率的聚合物控制气体（例如氧气或氮气），以及无活性稀释气体，减轻蚀刻轮廓的逐渐减少。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2000332003A METHOD OF INCREASING ADHESION OF DEPOSITS ON EXPOSED SURFACE WITHIN PROCESS CHAMBER 失效
公开(公告)号：JP2000332003A
公开(公告)日：2000-11-30
申请号：JP2000132646
申请日：2000-05-01
申请人： APPLIED MATERIALS INC
发明人： LUSCHER PAUL E , VAIDYA KAUSHIK , SALIMIAN SIAMAK , PU BRYAN Y , LEE EVANS Y
IPC分类号： H01L21/302 , C23C14/56 , C23C16/44 , H01J37/32 , H01L21/20 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce required frequency of cleaning a process chamber by roughening the inner surface of a process chamber wall or lining, increasing the size of such a roughened inner surface, and improving adhesion to increase the thickness of a material deposited on the surface. SOLUTION: A perforated circular gas distribution plate 44 is attached to the lower surface of the upper wall of a chamber and is formed from quartz, aluminum oxide, aluminum nitride or silicon carbide. The plate 44 is prepared by taking advantage of its shape feature, i.e., a surface contour having alternating projections and recesses or a 'rough surface', and has a plurality of shape features distributed over the entire surface. Each shape feature has a height of 0.1-100 mm, including both ends and a width of 0.1-100 mm including both ends. Adjacent shape features are dispersed at intervals of 0.1-100 mm including both ends. As a result, the adhesion of process byproducts deposited on the roughened surface is improved.

4. 发明专利

SG146578A1 HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST 未知
公开(公告)号：SG146578A1
公开(公告)日：2008-10-30
申请号：SG2008022857
申请日：2008-03-24
申请人： APPLIED MATERIALS INC
发明人： KIM JONG MUN , WANG JUDY , JOSHI AJEY M , LIU JINGBAO , PU BRYAN Y
摘要： HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

5. 发明申请

WO2004015736A3 LOW LOSS RF BIAS ELECTRODE FOR A PLASMA REACTOR WITH ENHANCED WAFER EDGE RF COUPLING AND HIGHLY EFFICIENT WAFER COOLING 审中-公开
标题翻译：用于具有增强波浪边缘射频耦合和高效节能冷却的等离子体反应器的低损耗RF偏置电极
公开(公告)号：WO2004015736A3
公开(公告)日：2004-10-14
申请号：PCT/US0325268
申请日：2003-08-11
申请人： APPLIED MATERIALS INC
发明人： HANAWA HIROJI , NGUYEN ANDREW , RAMASWAMY KARTIK , COLLINS KENNETH S , MONROY GONZALO ANTONIO , PU BRYAN Y
IPC分类号： H01H1/00 , H01J37/20 , H01J37/32 , H01L21/00
CPC分类号： H01L21/67109 , H01J37/32706 , H01J37/32724 , H01L21/67069
摘要： A plasma reactor for processing a semiconductor wafer (130) having a wafer diameter within a vacuum chamber (100) of the reactor has a wafer support (135) pedestal in the vacuum chamber extending upwardly from a floor (115) of the vacuum chamber. The wafer support pedestal includes a top layer (205) having a generally planar surface (205a) for supporting the wafer, the top layer having a diameter on the order of the wafer diameter. A conductive base (215, 220) underlies and supports the top layer, the conductive base having a diameter at least as great as the wafer diameter. An RF power output terminal below the floor of the vacuum chamber transmits power through an elongate inner conductor (230) within and generally parallel to an axis of the wafer support pedestal, the elongate inner conductor having a bottom end connected to the RF power output terminal and a top end terminated at the conductive base. A hollow cylindrical outer conductor (285) coaxial with the inner conductor has a diameter less than the diameter of the hollow cylindrical liner wall and is separated from the elongate inner conductor by a coaxial gap. A conductive upper ground plane annulus (290) is generally coaxial with the inner and outer conductors and located in a plane near the top end of the inner conductor, the conductive upper ground plane annulus having an inner edge connected to the hollow cylindrical outer conductor and an outer edge coupled to a ground potential.
摘要翻译：用于处理在反应器的真空室（100）内具有晶片直径的半导体晶片（130）的等离子体反应器具有从真空室的底板（115）向上延伸的真空室中的晶片支撑（135）基座。晶片支撑基座包括具有用于支撑晶片的大致平坦的表面（205a）的顶层（205），顶层具有晶片直径的直径。导电基座（215,220）位于并支撑顶层的下方，导电基底具有至少与晶片直径一样大的直径。真空室底部下方的RF功率输出端子通过细长的内部导体（230）传输电力，并且大致平行于晶片支撑基座的轴线，细长的内部导体具有连接到RF功率输出端子并且顶端终止于导电基底。与内导体同轴的中空圆柱形外导体（285）的直径小于中空圆柱形衬套壁的直径，并通过同轴间隙与细长内导体分离。导电上接地平面环（290）通常与内导体和外导体同轴并且位于靠近内导体顶端的平面中，导电上接地平面环具有连接到中空圆柱形外导体的内边缘，耦合到地电势的外边缘。

6. 发明申请

WO0168939A3 MAGNETICALLY ENHANCED PLASMA ETCH PROCESS USING A HEAVY FLUOROCARBON ETCHING GAS 审中-公开
标题翻译：使用重型荧光粉蚀气体进行磁性增强等离子体蚀刻工艺
公开(公告)号：WO0168939A3
公开(公告)日：2002-05-30
申请号：PCT/US0140277
申请日：2001-03-09
申请人： APPLIED MATERIALS INC
发明人： LIU JINGBAO , KOMATSU TAKEHIKO , SHAN HONGQING , HORIOKA KEIJI , PU BRYAN Y
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other flurocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.
摘要翻译：在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。可以使用两步法来蚀刻具有非常高的纵横比的孔。在第二步中，磁场和氧气流减少。 F / C比小于2，更优选不超过1.6或1.5的其它氟代烃可以被取代。

7. 发明申请

WO0237541A2 DIELECTRIC ETCH CHAMBER WITH EXPANDED PROCESS WINDOW 审中-公开
标题翻译：具有扩展工艺窗口的电介质隔离室
公开(公告)号：WO0237541A2
公开(公告)日：2002-05-10
申请号：PCT/US0146012
申请日：2001-11-01
申请人： APPLIED MATERIALS INC
发明人： CARDUCCI JAMES D , NOORBAKHSH HAMID , LEE EVANS Y , PU BRYAN Y , SHAN HONGQING , BJORKMAN CLAES , SALIMIAN SIAMAK , LUSCHER PAUL E , WELCH MICHAEL D , LIU JINGBAO , KOMATSU TAKEHIKO , DOAN KENNY L , CHANG MELODY , WANG ZHUXU , KIM YUNSANG , WANG RUIPING
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.
摘要翻译：具有扩展处理窗口的热控等离子体蚀刻室具有热控腔室衬垫，热分解气体入口，高排气能力，磁约束和粘附改善表面纹理。根据一个或多个表面纹理处理来调节室的内壁表面，以改善其上的副产物粘附。扩展的流动能力使得住宿时间短。通过至少部分地形成在腔室衬套中的一个或多个流体通道的流体可以包括第一衬垫，第二衬垫或第一衬垫和第二衬套。具有小的热质量并与温度受控衬管或衬垫热分解的多个气体喷嘴或微型分配板将工艺气体引入处理室。等离子体约束系统防止等离子体和产物排出泵送通道或排气系统部件。基板支撑件包括静电卡盘，双区域背面冷却和坚固的电极。支撑件包括具有预定电阻率的陶瓷基板支撑件，具有流体通道的支撑板和中间的导热层，其可包括压敏敏感的丙烯酸粘合剂和金属或金属合金。

8. 发明申请

WO9948130A9 DISTRIBUTED INDUCTIVELY-COUPLED PLASMA SOURCE 审中-公开
标题翻译：分布式电感耦合等离子体源
公开(公告)号：WO9948130A9
公开(公告)日：1999-12-09
申请号：PCT/US9904404
申请日：1999-03-01
申请人： APPLIED MATERIALS INC
发明人： PU BRYAN Y , SHAN HONGCHING , BJORKMAN CLAES , DOAN KENNY , WELCH MIKE , METT RICHARD RAYMOND
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to plasma in a semiconductor process chamber. In a first aspect, an array of induction coils is distributed over a geometric surface having a circular transverse section. Each coil has a transverse section which is wedge-shaped so that the adjacent sides of any two adjacent coils in the array are approximately parallel to a radius of the circular transverse section of the geometric surface. The sides of adjacent coils being parallel enhances the radial uniformity of the magnetic field produced by the coil array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the near end of each coil connects directly to electrical ground. In second and third embodiments, two coils are connected in series at the near end of each coil. In the second embodiment, the opposite ("RF hot") end of each coil is connected to a respective balanced output of an RF power supply. In the third embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，感应线圈阵列分布在具有圆形横截面的几何表面上。每个线圈具有楔形的横截面，使得阵列中任何两个相邻线圈的相邻侧面几乎平行于几何表面的圆形横截面的半径。相邻线圈的平行侧面增强了由线圈阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线圈接近电接地电位。在一个实施例中，每个线圈的近端直接连接到电气接地。在第二和第三实施例中，两个线圈在每个线圈的近端串联连接。在第二实施例中，每个线圈的相对（“RF热”）端连接到RF电源的相应的平衡输出端。在第三实施例中，一个线圈的热端连接到RF电源的不平衡输出，另一个线圈的热端通过电容器连接到电接地，该电容器以与之相对应的频率的频率与后一个线圈谐振射频电源。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式